Study of low-temperature sol–gel processed In-doped ZnO for organic photovoltaics

This article studies low-temperature sol–gel processed indium (In)-doped ZnO (IZO) for highly efficient organic photovoltaics (OPVs). Contrary to the prior research trends adopting doped sol–gel processed ZnO with an annealing temperature of over 400 °C for the hydrolysis reaction, IZO with an annea...

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Veröffentlicht in:	AIP advances 2022-09, Vol.12 (9), p.095117-095117-7
1. Verfasser:	Kim, Jaehoon
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Doping Energy conversion efficiency High temperature Low temperature Photovoltaic cells Sol-gel processes Zinc oxide
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creator	Kim, Jaehoon
description	This article studies low-temperature sol–gel processed indium (In)-doped ZnO (IZO) for highly efficient organic photovoltaics (OPVs). Contrary to the prior research trends adopting doped sol–gel processed ZnO with an annealing temperature of over 400 °C for the hydrolysis reaction, IZO with an annealing temperature of 200 °C is studied. Similar to the high-temperature solvent system, it is elucidated that low-temperature sol–gel processed IZO effectively improves the performance of OPVs, increasing the power conversion efficiency from 6.80% to 7.35%. For further analyses, the current–voltage (J–V) characteristics and ideality factors (n) are examined as a function of In doping ratios, which revealed that In doping on ZnO effectively reduces trap-assisted recombination within devices.
doi_str_mv	10.1063/5.0109536
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Contrary to the prior research trends adopting doped sol–gel processed ZnO with an annealing temperature of over 400 °C for the hydrolysis reaction, IZO with an annealing temperature of 200 °C is studied. Similar to the high-temperature solvent system, it is elucidated that low-temperature sol–gel processed IZO effectively improves the performance of OPVs, increasing the power conversion efficiency from 6.80% to 7.35%. 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Contrary to the prior research trends adopting doped sol–gel processed ZnO with an annealing temperature of over 400 °C for the hydrolysis reaction, IZO with an annealing temperature of 200 °C is studied. Similar to the high-temperature solvent system, it is elucidated that low-temperature sol–gel processed IZO effectively improves the performance of OPVs, increasing the power conversion efficiency from 6.80% to 7.35%. 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subjects	Annealing Doping Energy conversion efficiency High temperature Low temperature Photovoltaic cells Sol-gel processes Zinc oxide
title	Study of low-temperature sol–gel processed In-doped ZnO for organic photovoltaics
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