Effect of interdigital transducers structure on insertion loss of high-frequency surface acoustic wave devices
With the development of information technology, surface acoustic wave (SAW) devices are strongly required to exhibit higher integration, and lower insertion loss, as well as complementary metal oxide semiconductor (CMOS), processes compatibility. Aluminum nitride (AlN) is an excellent piezoelectric...
Gespeichert in:
| Veröffentlicht in: | Journal of materials science. Materials in electronics 2022-09, Vol.33 (27), p.22017-22026 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 22026 |
|---|---|
| container_issue | 27 |
| container_start_page | 22017 |
| container_title | Journal of materials science. Materials in electronics |
| container_volume | 33 |
| creator | Li, Lianqiu Wang, Fang Li, Kaixuan Han, Yemei Hu, Kai Sun, Zheng Xie, Yangyang Kong, Deqing Song, Dianyou Qian, Lirong Zhang, Kailiang |
| description | With the development of information technology, surface acoustic wave (SAW) devices are strongly required to exhibit higher integration, and lower insertion loss, as well as complementary metal oxide semiconductor (CMOS), processes compatibility. Aluminum nitride (AlN) is an excellent piezoelectric material that is compatible with CMOS processes; however, the insertion loss for AlN/Si SAW devices is high under conventional interdigital transducers (IDT) structure. In this work, AlN piezoelectric film-based floating electrode unidirectional transducers (FEUDT) structures are developed, and its propagation characteristics are simulated with the help of finite-element method (FEM). By Fourier transforming the corresponding time response, the insertion loss of the devices is calculated to be − 15.52 (forward) and − 22.94 dB (backward). According to simulation structure, FEUDT and IDT-structured devices with 3.6 μm wavelength are fabricated by electron beam lithography, and operating frequency of both devices reached 1.4 GHz, which is basically consistent with simulation results, and insertion loss of floating electrode unidirectional transducers structures is about 11 dB lower than that of conventional structure. |
| doi_str_mv | 10.1007/s10854-022-08993-1 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2715906692</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2715906692</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-d2627dc3b04f2624609ac980bd6787248d7bc0c745b4bc0917b177792a00665c3</originalsourceid><addsrcrecordid>eNp9kM1OwzAQhC0EEqXwApwscTbYjhPHR1SVH6kSF5C4WY5jp65KUtZOUd8elyBx47Rz-GZ3ZxC6ZvSWUSrvIqN1KQjlnNBaqYKwEzRjpSyIqPn7KZpRVUoiSs7P0UWMG0ppJYp6hvql984mPHgc-uSgDV1IZosTmD62o3UQcUww2jSCw0Ofqegghay2Q4xH3zp0a-LBfY6utwccR_DGOmzsMMYULP4ye4dbtw_WxUt05s02uqvfOUdvD8vXxRNZvTw-L-5XxBZMJdLyisvWFg0VPktRUWWsqmnTVrKWXNStbCy1UpSNyEIx2TAppeIm56pKW8zRzbR3B0P-Kya9GUbo80nNJStVphTPFJ8oCzkLOK93ED4MHDSj-tirnnrVuVf906tm2VRMppjhvnPwt_of1zeUdHyJ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2715906692</pqid></control><display><type>article</type><title>Effect of interdigital transducers structure on insertion loss of high-frequency surface acoustic wave devices</title><source>Springer Nature - Complete Springer Journals</source><creator>Li, Lianqiu ; Wang, Fang ; Li, Kaixuan ; Han, Yemei ; Hu, Kai ; Sun, Zheng ; Xie, Yangyang ; Kong, Deqing ; Song, Dianyou ; Qian, Lirong ; Zhang, Kailiang</creator><creatorcontrib>Li, Lianqiu ; Wang, Fang ; Li, Kaixuan ; Han, Yemei ; Hu, Kai ; Sun, Zheng ; Xie, Yangyang ; Kong, Deqing ; Song, Dianyou ; Qian, Lirong ; Zhang, Kailiang</creatorcontrib><description>With the development of information technology, surface acoustic wave (SAW) devices are strongly required to exhibit higher integration, and lower insertion loss, as well as complementary metal oxide semiconductor (CMOS), processes compatibility. Aluminum nitride (AlN) is an excellent piezoelectric material that is compatible with CMOS processes; however, the insertion loss for AlN/Si SAW devices is high under conventional interdigital transducers (IDT) structure. In this work, AlN piezoelectric film-based floating electrode unidirectional transducers (FEUDT) structures are developed, and its propagation characteristics are simulated with the help of finite-element method (FEM). By Fourier transforming the corresponding time response, the insertion loss of the devices is calculated to be − 15.52 (forward) and − 22.94 dB (backward). According to simulation structure, FEUDT and IDT-structured devices with 3.6 μm wavelength are fabricated by electron beam lithography, and operating frequency of both devices reached 1.4 GHz, which is basically consistent with simulation results, and insertion loss of floating electrode unidirectional transducers structures is about 11 dB lower than that of conventional structure.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-022-08993-1</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Aluminum nitride ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; CMOS ; Devices ; Electrodes ; Electron beam lithography ; Finite element method ; Insertion loss ; Interdigital transducers ; Materials Science ; Optical and Electronic Materials ; Piezoelectric films ; Simulation ; Surface acoustic wave devices ; Surface acoustic waves ; Time response</subject><ispartof>Journal of materials science. Materials in electronics, 2022-09, Vol.33 (27), p.22017-22026</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-d2627dc3b04f2624609ac980bd6787248d7bc0c745b4bc0917b177792a00665c3</citedby><cites>FETCH-LOGICAL-c319t-d2627dc3b04f2624609ac980bd6787248d7bc0c745b4bc0917b177792a00665c3</cites><orcidid>0000-0001-5593-7480 ; 0000-0001-6840-8676</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-022-08993-1$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-022-08993-1$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids></links><search><creatorcontrib>Li, Lianqiu</creatorcontrib><creatorcontrib>Wang, Fang</creatorcontrib><creatorcontrib>Li, Kaixuan</creatorcontrib><creatorcontrib>Han, Yemei</creatorcontrib><creatorcontrib>Hu, Kai</creatorcontrib><creatorcontrib>Sun, Zheng</creatorcontrib><creatorcontrib>Xie, Yangyang</creatorcontrib><creatorcontrib>Kong, Deqing</creatorcontrib><creatorcontrib>Song, Dianyou</creatorcontrib><creatorcontrib>Qian, Lirong</creatorcontrib><creatorcontrib>Zhang, Kailiang</creatorcontrib><title>Effect of interdigital transducers structure on insertion loss of high-frequency surface acoustic wave devices</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>With the development of information technology, surface acoustic wave (SAW) devices are strongly required to exhibit higher integration, and lower insertion loss, as well as complementary metal oxide semiconductor (CMOS), processes compatibility. Aluminum nitride (AlN) is an excellent piezoelectric material that is compatible with CMOS processes; however, the insertion loss for AlN/Si SAW devices is high under conventional interdigital transducers (IDT) structure. In this work, AlN piezoelectric film-based floating electrode unidirectional transducers (FEUDT) structures are developed, and its propagation characteristics are simulated with the help of finite-element method (FEM). By Fourier transforming the corresponding time response, the insertion loss of the devices is calculated to be − 15.52 (forward) and − 22.94 dB (backward). According to simulation structure, FEUDT and IDT-structured devices with 3.6 μm wavelength are fabricated by electron beam lithography, and operating frequency of both devices reached 1.4 GHz, which is basically consistent with simulation results, and insertion loss of floating electrode unidirectional transducers structures is about 11 dB lower than that of conventional structure.</description><subject>Aluminum nitride</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>CMOS</subject><subject>Devices</subject><subject>Electrodes</subject><subject>Electron beam lithography</subject><subject>Finite element method</subject><subject>Insertion loss</subject><subject>Interdigital transducers</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Piezoelectric films</subject><subject>Simulation</subject><subject>Surface acoustic wave devices</subject><subject>Surface acoustic waves</subject><subject>Time response</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kM1OwzAQhC0EEqXwApwscTbYjhPHR1SVH6kSF5C4WY5jp65KUtZOUd8elyBx47Rz-GZ3ZxC6ZvSWUSrvIqN1KQjlnNBaqYKwEzRjpSyIqPn7KZpRVUoiSs7P0UWMG0ppJYp6hvql984mPHgc-uSgDV1IZosTmD62o3UQcUww2jSCw0Ofqegghay2Q4xH3zp0a-LBfY6utwccR_DGOmzsMMYULP4ye4dbtw_WxUt05s02uqvfOUdvD8vXxRNZvTw-L-5XxBZMJdLyisvWFg0VPktRUWWsqmnTVrKWXNStbCy1UpSNyEIx2TAppeIm56pKW8zRzbR3B0P-Kya9GUbo80nNJStVphTPFJ8oCzkLOK93ED4MHDSj-tirnnrVuVf906tm2VRMppjhvnPwt_of1zeUdHyJ</recordid><startdate>20220901</startdate><enddate>20220901</enddate><creator>Li, Lianqiu</creator><creator>Wang, Fang</creator><creator>Li, Kaixuan</creator><creator>Han, Yemei</creator><creator>Hu, Kai</creator><creator>Sun, Zheng</creator><creator>Xie, Yangyang</creator><creator>Kong, Deqing</creator><creator>Song, Dianyou</creator><creator>Qian, Lirong</creator><creator>Zhang, Kailiang</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0001-5593-7480</orcidid><orcidid>https://orcid.org/0000-0001-6840-8676</orcidid></search><sort><creationdate>20220901</creationdate><title>Effect of interdigital transducers structure on insertion loss of high-frequency surface acoustic wave devices</title><author>Li, Lianqiu ; Wang, Fang ; Li, Kaixuan ; Han, Yemei ; Hu, Kai ; Sun, Zheng ; Xie, Yangyang ; Kong, Deqing ; Song, Dianyou ; Qian, Lirong ; Zhang, Kailiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-d2627dc3b04f2624609ac980bd6787248d7bc0c745b4bc0917b177792a00665c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Aluminum nitride</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>CMOS</topic><topic>Devices</topic><topic>Electrodes</topic><topic>Electron beam lithography</topic><topic>Finite element method</topic><topic>Insertion loss</topic><topic>Interdigital transducers</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Piezoelectric films</topic><topic>Simulation</topic><topic>Surface acoustic wave devices</topic><topic>Surface acoustic waves</topic><topic>Time response</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Lianqiu</creatorcontrib><creatorcontrib>Wang, Fang</creatorcontrib><creatorcontrib>Li, Kaixuan</creatorcontrib><creatorcontrib>Han, Yemei</creatorcontrib><creatorcontrib>Hu, Kai</creatorcontrib><creatorcontrib>Sun, Zheng</creatorcontrib><creatorcontrib>Xie, Yangyang</creatorcontrib><creatorcontrib>Kong, Deqing</creatorcontrib><creatorcontrib>Song, Dianyou</creatorcontrib><creatorcontrib>Qian, Lirong</creatorcontrib><creatorcontrib>Zhang, Kailiang</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Lianqiu</au><au>Wang, Fang</au><au>Li, Kaixuan</au><au>Han, Yemei</au><au>Hu, Kai</au><au>Sun, Zheng</au><au>Xie, Yangyang</au><au>Kong, Deqing</au><au>Song, Dianyou</au><au>Qian, Lirong</au><au>Zhang, Kailiang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of interdigital transducers structure on insertion loss of high-frequency surface acoustic wave devices</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2022-09-01</date><risdate>2022</risdate><volume>33</volume><issue>27</issue><spage>22017</spage><epage>22026</epage><pages>22017-22026</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>With the development of information technology, surface acoustic wave (SAW) devices are strongly required to exhibit higher integration, and lower insertion loss, as well as complementary metal oxide semiconductor (CMOS), processes compatibility. Aluminum nitride (AlN) is an excellent piezoelectric material that is compatible with CMOS processes; however, the insertion loss for AlN/Si SAW devices is high under conventional interdigital transducers (IDT) structure. In this work, AlN piezoelectric film-based floating electrode unidirectional transducers (FEUDT) structures are developed, and its propagation characteristics are simulated with the help of finite-element method (FEM). By Fourier transforming the corresponding time response, the insertion loss of the devices is calculated to be − 15.52 (forward) and − 22.94 dB (backward). According to simulation structure, FEUDT and IDT-structured devices with 3.6 μm wavelength are fabricated by electron beam lithography, and operating frequency of both devices reached 1.4 GHz, which is basically consistent with simulation results, and insertion loss of floating electrode unidirectional transducers structures is about 11 dB lower than that of conventional structure.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-022-08993-1</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0001-5593-7480</orcidid><orcidid>https://orcid.org/0000-0001-6840-8676</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2022-09, Vol.33 (27), p.22017-22026 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_journals_2715906692 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Aluminum nitride Characterization and Evaluation of Materials Chemistry and Materials Science CMOS Devices Electrodes Electron beam lithography Finite element method Insertion loss Interdigital transducers Materials Science Optical and Electronic Materials Piezoelectric films Simulation Surface acoustic wave devices Surface acoustic waves Time response |
| title | Effect of interdigital transducers structure on insertion loss of high-frequency surface acoustic wave devices |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T16%3A01%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20interdigital%20transducers%20structure%20on%20insertion%20loss%20of%20high-frequency%20surface%20acoustic%20wave%20devices&rft.jtitle=Journal%20of%20materials%20science.%20Materials%20in%20electronics&rft.au=Li,%20Lianqiu&rft.date=2022-09-01&rft.volume=33&rft.issue=27&rft.spage=22017&rft.epage=22026&rft.pages=22017-22026&rft.issn=0957-4522&rft.eissn=1573-482X&rft_id=info:doi/10.1007/s10854-022-08993-1&rft_dat=%3Cproquest_cross%3E2715906692%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2715906692&rft_id=info:pmid/&rfr_iscdi=true |