Atomic Layer Deposition and Thermal Transformations of Aluminum-Vanadium Oxide Thin Films
Aluminum-vanadium oxide (Al x V y O z ) nanofilms were obtained by atomic layer deposition using trimethylaluminum, vanadium oxychloride, and water. The growth of films was studied in situ by quartz crystal microbalance and ex situ by deposition on Si(100). At a deposition temperature of 115°C, line...
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| Veröffentlicht in: | Russian journal of general chemistry 2022-08, Vol.92 (8), p.1498-1510 |
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| creator | Abdulagatov, A. I. Maksumova, A. M. Palchaev, D. K. Rabadanov, M. Kh Abdulagatov, I. M. |
| description | Aluminum-vanadium oxide (Al
x
V
y
O
z
) nanofilms were obtained by atomic layer deposition using trimethylaluminum, vanadium oxychloride, and water. The growth of films was studied
in situ
by quartz crystal microbalance and
ex situ
by deposition on Si(100). At a deposition temperature of 115°C, linear growth of films and a self-limited nature of surface reactions were observed. Two types of amorphous films, Al
2.1
V
0.4
O
4.1
Cl
0.1
and Al
1.1
V
0.9
O
4.4
Cl
0.2
, were obtained. The thermal treatment of Al
1.1
V
0.9
O
4.4
Cl
0.2
films in the temperature range from 500 to 550°C in air resulted in the Al
2
O
3
–V
2
O
5
heterostructured coatings. Annealing at 500°C led to spontaneous formation of crystalline V
2
O
5
through the formation of supercooled vanadium oxide nanodroplets. At 550°C, the formation of V
2
O
5
crystalline nanofilm and single-crystal nanowires was observed. Nanoscale islands of triclinic AlVO
4
were obtained by heat treatment at 630°C. |
| doi_str_mv | 10.1134/S1070363222080187 |
| format | Article |
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x
V
y
O
z
) nanofilms were obtained by atomic layer deposition using trimethylaluminum, vanadium oxychloride, and water. The growth of films was studied
in situ
by quartz crystal microbalance and
ex situ
by deposition on Si(100). At a deposition temperature of 115°C, linear growth of films and a self-limited nature of surface reactions were observed. Two types of amorphous films, Al
2.1
V
0.4
O
4.1
Cl
0.1
and Al
1.1
V
0.9
O
4.4
Cl
0.2
, were obtained. The thermal treatment of Al
1.1
V
0.9
O
4.4
Cl
0.2
films in the temperature range from 500 to 550°C in air resulted in the Al
2
O
3
–V
2
O
5
heterostructured coatings. Annealing at 500°C led to spontaneous formation of crystalline V
2
O
5
through the formation of supercooled vanadium oxide nanodroplets. At 550°C, the formation of V
2
O
5
crystalline nanofilm and single-crystal nanowires was observed. Nanoscale islands of triclinic AlVO
4
were obtained by heat treatment at 630°C.</description><identifier>ISSN: 1070-3632</identifier><identifier>EISSN: 1608-3350</identifier><identifier>DOI: 10.1134/S1070363222080187</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Aluminum oxide ; Annealing ; Atomic layer epitaxy ; Chemistry ; Chemistry and Materials Science ; Chemistry/Food Science ; Crystal structure ; Crystallinity ; Dielectric films ; Heat treatment ; Nanowires ; Quartz crystals ; Single crystals ; Surface reactions ; Thermal transformations ; Thin films ; Vanadium ; Vanadium oxides ; Vanadium pentoxide</subject><ispartof>Russian journal of general chemistry, 2022-08, Vol.92 (8), p.1498-1510</ispartof><rights>Pleiades Publishing, Ltd. 2022</rights><rights>COPYRIGHT 2022 Springer</rights><rights>Pleiades Publishing, Ltd. 2022.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-a56288c0d6fcc13a15d3c45a665c66672fefa978bd8776a9700436f8205be2143</citedby><cites>FETCH-LOGICAL-c285t-a56288c0d6fcc13a15d3c45a665c66672fefa978bd8776a9700436f8205be2143</cites><orcidid>0000-0002-8026-6612 ; 0000-0002-3364-5927 ; 0000-0003-1857-7652 ; 0000-0002-6299-5280</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1070363222080187$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1070363222080187$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Abdulagatov, A. I.</creatorcontrib><creatorcontrib>Maksumova, A. M.</creatorcontrib><creatorcontrib>Palchaev, D. K.</creatorcontrib><creatorcontrib>Rabadanov, M. Kh</creatorcontrib><creatorcontrib>Abdulagatov, I. M.</creatorcontrib><title>Atomic Layer Deposition and Thermal Transformations of Aluminum-Vanadium Oxide Thin Films</title><title>Russian journal of general chemistry</title><addtitle>Russ J Gen Chem</addtitle><description>Aluminum-vanadium oxide (Al
x
V
y
O
z
) nanofilms were obtained by atomic layer deposition using trimethylaluminum, vanadium oxychloride, and water. The growth of films was studied
in situ
by quartz crystal microbalance and
ex situ
by deposition on Si(100). At a deposition temperature of 115°C, linear growth of films and a self-limited nature of surface reactions were observed. Two types of amorphous films, Al
2.1
V
0.4
O
4.1
Cl
0.1
and Al
1.1
V
0.9
O
4.4
Cl
0.2
, were obtained. The thermal treatment of Al
1.1
V
0.9
O
4.4
Cl
0.2
films in the temperature range from 500 to 550°C in air resulted in the Al
2
O
3
–V
2
O
5
heterostructured coatings. Annealing at 500°C led to spontaneous formation of crystalline V
2
O
5
through the formation of supercooled vanadium oxide nanodroplets. At 550°C, the formation of V
2
O
5
crystalline nanofilm and single-crystal nanowires was observed. Nanoscale islands of triclinic AlVO
4
were obtained by heat treatment at 630°C.</description><subject>Aluminum oxide</subject><subject>Annealing</subject><subject>Atomic layer epitaxy</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Chemistry/Food Science</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>Dielectric films</subject><subject>Heat treatment</subject><subject>Nanowires</subject><subject>Quartz crystals</subject><subject>Single crystals</subject><subject>Surface reactions</subject><subject>Thermal transformations</subject><subject>Thin films</subject><subject>Vanadium</subject><subject>Vanadium oxides</subject><subject>Vanadium pentoxide</subject><issn>1070-3632</issn><issn>1608-3350</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp1kMFLwzAUxosoOKd_gLeA586XpE2yY5lOhYEHp-CpZGkyM9pkJi24_96MCh5EcshHvu_38t7LsmsMM4xpcfuCgQNllBACArDgJ9kEMxA5pSWcJp3s_OifZxcx7gAwACOT7L3qfWcVWsmDDuhO7320vfUOSdeg9YcOnWzROkgXjU_6aEXkDaraobNu6PI36WRjhw49f9lGJ8Q6tLRtFy-zMyPbqK9-7mn2urxfLx7z1fPD06Ja5YqIss9lyYgQChpmlMJU4rKhqiglY6VijHFitJFzLjaN4JwlBVBQZgSBcqMJLug0uxnr7oP_HHTs650fgktf1oTjYo6BFpBSszG1la2urTO-D1Kl0-g0vnfa2PReccznRBBGEoBHQAUfY9Cm3gfbyXCoMdTHldd_Vp4YMjIxZd1Wh99W_oe-Ab-ugT8</recordid><startdate>20220801</startdate><enddate>20220801</enddate><creator>Abdulagatov, A. I.</creator><creator>Maksumova, A. M.</creator><creator>Palchaev, D. K.</creator><creator>Rabadanov, M. Kh</creator><creator>Abdulagatov, I. M.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-8026-6612</orcidid><orcidid>https://orcid.org/0000-0002-3364-5927</orcidid><orcidid>https://orcid.org/0000-0003-1857-7652</orcidid><orcidid>https://orcid.org/0000-0002-6299-5280</orcidid></search><sort><creationdate>20220801</creationdate><title>Atomic Layer Deposition and Thermal Transformations of Aluminum-Vanadium Oxide Thin Films</title><author>Abdulagatov, A. I. ; Maksumova, A. M. ; Palchaev, D. K. ; Rabadanov, M. Kh ; Abdulagatov, I. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-a56288c0d6fcc13a15d3c45a665c66672fefa978bd8776a9700436f8205be2143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Aluminum oxide</topic><topic>Annealing</topic><topic>Atomic layer epitaxy</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Chemistry/Food Science</topic><topic>Crystal structure</topic><topic>Crystallinity</topic><topic>Dielectric films</topic><topic>Heat treatment</topic><topic>Nanowires</topic><topic>Quartz crystals</topic><topic>Single crystals</topic><topic>Surface reactions</topic><topic>Thermal transformations</topic><topic>Thin films</topic><topic>Vanadium</topic><topic>Vanadium oxides</topic><topic>Vanadium pentoxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Abdulagatov, A. I.</creatorcontrib><creatorcontrib>Maksumova, A. M.</creatorcontrib><creatorcontrib>Palchaev, D. K.</creatorcontrib><creatorcontrib>Rabadanov, M. Kh</creatorcontrib><creatorcontrib>Abdulagatov, I. M.</creatorcontrib><collection>CrossRef</collection><jtitle>Russian journal of general chemistry</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Abdulagatov, A. I.</au><au>Maksumova, A. M.</au><au>Palchaev, D. K.</au><au>Rabadanov, M. Kh</au><au>Abdulagatov, I. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atomic Layer Deposition and Thermal Transformations of Aluminum-Vanadium Oxide Thin Films</atitle><jtitle>Russian journal of general chemistry</jtitle><stitle>Russ J Gen Chem</stitle><date>2022-08-01</date><risdate>2022</risdate><volume>92</volume><issue>8</issue><spage>1498</spage><epage>1510</epage><pages>1498-1510</pages><issn>1070-3632</issn><eissn>1608-3350</eissn><abstract>Aluminum-vanadium oxide (Al
x
V
y
O
z
) nanofilms were obtained by atomic layer deposition using trimethylaluminum, vanadium oxychloride, and water. The growth of films was studied
in situ
by quartz crystal microbalance and
ex situ
by deposition on Si(100). At a deposition temperature of 115°C, linear growth of films and a self-limited nature of surface reactions were observed. Two types of amorphous films, Al
2.1
V
0.4
O
4.1
Cl
0.1
and Al
1.1
V
0.9
O
4.4
Cl
0.2
, were obtained. The thermal treatment of Al
1.1
V
0.9
O
4.4
Cl
0.2
films in the temperature range from 500 to 550°C in air resulted in the Al
2
O
3
–V
2
O
5
heterostructured coatings. Annealing at 500°C led to spontaneous formation of crystalline V
2
O
5
through the formation of supercooled vanadium oxide nanodroplets. At 550°C, the formation of V
2
O
5
crystalline nanofilm and single-crystal nanowires was observed. Nanoscale islands of triclinic AlVO
4
were obtained by heat treatment at 630°C.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1070363222080187</doi><tpages>13</tpages><orcidid>https://orcid.org/0000-0002-8026-6612</orcidid><orcidid>https://orcid.org/0000-0002-3364-5927</orcidid><orcidid>https://orcid.org/0000-0003-1857-7652</orcidid><orcidid>https://orcid.org/0000-0002-6299-5280</orcidid></addata></record> |
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| ispartof | Russian journal of general chemistry, 2022-08, Vol.92 (8), p.1498-1510 |
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| language | eng |
| recordid | cdi_proquest_journals_2714910340 |
| source | SpringerNature Journals |
| subjects | Aluminum oxide Annealing Atomic layer epitaxy Chemistry Chemistry and Materials Science Chemistry/Food Science Crystal structure Crystallinity Dielectric films Heat treatment Nanowires Quartz crystals Single crystals Surface reactions Thermal transformations Thin films Vanadium Vanadium oxides Vanadium pentoxide |
| title | Atomic Layer Deposition and Thermal Transformations of Aluminum-Vanadium Oxide Thin Films |
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