$Structural peculiarities of $\varepsilon$-Fe$_2$O$_3$ / GaN epitaxial layers unveiled by high-resolution transmission electron microscopy and neutron reflectometry$

Structural peculiarities of $\varepsilon$-Fe$_2$O$_3$ / GaN epitaxial layers unveiled by high-resolution transmission electron microscopy and neutron reflectometry

The present paper is dedicated to the structural study of crystallographic peculiarities appearing in epitaxial films of metastable epsilon iron oxide ($\varepsilon$-Fe$_2$O$_3$) grown by pulsed laser deposition onto a semiconductor GaN (0001) substrate. The columnar structure of the nanoscale...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	arXiv.org 2022-09
Hauptverfasser:	Suturin, Sergey M, Dvortsova, Polina A, Snigirev, Leonid A, Ukleev, Victor A, Hanashima, Takayasu, Rosado, Marcos, Ballesteros, Belén
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical composition Columnar structure Crystallography Density Electron diffraction Epitaxial layers Gallium nitrides Heterostructures High energy electrons High resolution High resolution electron microscopy Image enhancement Image filters Iron oxides Microscopy Pulsed laser deposition Pulsed lasers Reflectometry Room temperature Semiconductor devices Substrates Transition layers
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!

Structural peculiarities of \(\varepsilon\)-Fe\(_2\)O\(_3\) / GaN epitaxial layers unveiled by high-resolution transmission electron microscopy and neutron reflectometry