Structural peculiarities of \(\varepsilon\)-Fe\(_2\)O\(_3\) / GaN epitaxial layers unveiled by high-resolution transmission electron microscopy and neutron reflectometry
The present paper is dedicated to the structural study of crystallographic peculiarities appearing in epitaxial films of metastable epsilon iron oxide (\(\varepsilon\)-Fe\(_2\)O\(_3\)) grown by pulsed laser deposition onto a semiconductor GaN (0001) substrate. The columnar structure of the nanoscale...
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| description | The present paper is dedicated to the structural study of crystallographic peculiarities appearing in epitaxial films of metastable epsilon iron oxide (\(\varepsilon\)-Fe\(_2\)O\(_3\)) grown by pulsed laser deposition onto a semiconductor GaN (0001) substrate. The columnar structure of the nanoscale \(\varepsilon\)-Fe\(_2\)O\(_3\) films has been for the first time investigated using high resolution electron microscopy (HRTEM) direct space technique complemented by reciprocal space methods of high-energy electron diffraction and color-enhanced HRTEM image Fourier filtering. The study of \(\varepsilon\)-Fe\(_2\)O\(_3\) / GaN interface formation has been further expanded by carrying out a depth resolved analysis of density and chemical composition by neutron reflectometry and energy-dispersive X-ray spectroscopy. The obtained results shed light onto the properties and the origin of the enigmatic few-nanometer thick low density transition layer residing at the \(\varepsilon\)-Fe\(_2\)O\(_3\) / GaN interface. A detailed knowledge of the properties of this layer is believed to be highly important for the development of \(\varepsilon\)-Fe\(_2\)O\(_3\) / GaN heterostructures that can potentially become part of the iron-oxide based ferroic-on-semiconductor devices with room temperature magneto-electric coupling. |
| doi_str_mv | 10.48550/arxiv.2209.06460 |
| format | Article |
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The columnar structure of the nanoscale \(\varepsilon\)-Fe\(_2\)O\(_3\) films has been for the first time investigated using high resolution electron microscopy (HRTEM) direct space technique complemented by reciprocal space methods of high-energy electron diffraction and color-enhanced HRTEM image Fourier filtering. The study of \(\varepsilon\)-Fe\(_2\)O\(_3\) / GaN interface formation has been further expanded by carrying out a depth resolved analysis of density and chemical composition by neutron reflectometry and energy-dispersive X-ray spectroscopy. The obtained results shed light onto the properties and the origin of the enigmatic few-nanometer thick low density transition layer residing at the \(\varepsilon\)-Fe\(_2\)O\(_3\) / GaN interface. A detailed knowledge of the properties of this layer is believed to be highly important for the development of \(\varepsilon\)-Fe\(_2\)O\(_3\) / GaN heterostructures that can potentially become part of the iron-oxide based ferroic-on-semiconductor devices with room temperature magneto-electric coupling.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.2209.06460</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Chemical composition ; Columnar structure ; Crystallography ; Density ; Electron diffraction ; Epitaxial layers ; Gallium nitrides ; Heterostructures ; High energy electrons ; High resolution ; High resolution electron microscopy ; Image enhancement ; Image filters ; Iron oxides ; Microscopy ; Pulsed laser deposition ; Pulsed lasers ; Reflectometry ; Room temperature ; Semiconductor devices ; Substrates ; Transition layers</subject><ispartof>arXiv.org, 2022-09</ispartof><rights>2022. 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The columnar structure of the nanoscale \(\varepsilon\)-Fe\(_2\)O\(_3\) films has been for the first time investigated using high resolution electron microscopy (HRTEM) direct space technique complemented by reciprocal space methods of high-energy electron diffraction and color-enhanced HRTEM image Fourier filtering. The study of \(\varepsilon\)-Fe\(_2\)O\(_3\) / GaN interface formation has been further expanded by carrying out a depth resolved analysis of density and chemical composition by neutron reflectometry and energy-dispersive X-ray spectroscopy. The obtained results shed light onto the properties and the origin of the enigmatic few-nanometer thick low density transition layer residing at the \(\varepsilon\)-Fe\(_2\)O\(_3\) / GaN interface. A detailed knowledge of the properties of this layer is believed to be highly important for the development of \(\varepsilon\)-Fe\(_2\)O\(_3\) / GaN heterostructures that can potentially become part of the iron-oxide based ferroic-on-semiconductor devices with room temperature magneto-electric coupling.</description><subject>Chemical composition</subject><subject>Columnar structure</subject><subject>Crystallography</subject><subject>Density</subject><subject>Electron diffraction</subject><subject>Epitaxial layers</subject><subject>Gallium nitrides</subject><subject>Heterostructures</subject><subject>High energy electrons</subject><subject>High resolution</subject><subject>High resolution electron microscopy</subject><subject>Image enhancement</subject><subject>Image filters</subject><subject>Iron oxides</subject><subject>Microscopy</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Reflectometry</subject><subject>Room temperature</subject><subject>Semiconductor devices</subject><subject>Substrates</subject><subject>Transition layers</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNqNjLtOwzAUhi0kJCroA7BZYmmGpI5z7YwoTGWAMVJk0hN6KtcOx3bUPBJvSYp4AKb_9uln7D4VSV4XhVgrOuOYSCk2iSjzUlyxhcyyNK5zKW_Y0rmjEEKWlSyKbMG-3zyFzgdSmg_QBY2K0CM4bnverJpREQwOtTVNFG-hWbWyiV5nyZqIr_mz2nEY0KszzgdaTUCOBzMCatjzj4kf8PMQEzirg0druCdl3AmduwTQ0HmazQk7sq6zw8SV2XMD4bcm6C-EPYGn6Y5d90o7WP7pLXvYPr0_vsQD2a8AzrdHG8jMUyurNK_qUmxk9j_qB6aQZp4</recordid><startdate>20220914</startdate><enddate>20220914</enddate><creator>Suturin, Sergey M</creator><creator>Dvortsova, Polina A</creator><creator>Snigirev, Leonid A</creator><creator>Ukleev, Victor A</creator><creator>Hanashima, Takayasu</creator><creator>Rosado, Marcos</creator><creator>Ballesteros, Belén</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PHGZM</scope><scope>PHGZT</scope><scope>PIMPY</scope><scope>PKEHL</scope><scope>PQEST</scope><scope>PQGLB</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope></search><sort><creationdate>20220914</creationdate><title>Structural peculiarities of \(\varepsilon\)-Fe\(_2\)O\(_3\) / GaN epitaxial layers unveiled by high-resolution transmission electron microscopy and neutron reflectometry</title><author>Suturin, Sergey M ; 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| subjects | Chemical composition Columnar structure Crystallography Density Electron diffraction Epitaxial layers Gallium nitrides Heterostructures High energy electrons High resolution High resolution electron microscopy Image enhancement Image filters Iron oxides Microscopy Pulsed laser deposition Pulsed lasers Reflectometry Room temperature Semiconductor devices Substrates Transition layers |
| title | Structural peculiarities of \(\varepsilon\)-Fe\(_2\)O\(_3\) / GaN epitaxial layers unveiled by high-resolution transmission electron microscopy and neutron reflectometry |
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