Thermoelectric performance of multiphase GeSe‐CuSe composites prepared by hydrogen decrepitation method
Summary Recently, lead and tellurium‐free GeSe chalcogenide‐based thermoelectric materials have been considered as an alternative for PbTe and GeTe because of their nontoxic and attractive properties. However, the reports on thermoelectric properties of GeSe are very limited with low power factor va...
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| Veröffentlicht in: | International journal of energy research 2022-10, Vol.46 (12), p.17455-17464 |
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| creator | Sidharth, D. Alagar Nedunchezhian, A.S. Rajkumar, R. Kalaiarasan, K. Arivanandhan, M. Fujiwara, K. Anbalagan, G. Jayavel, R. |
| description | Summary
Recently, lead and tellurium‐free GeSe chalcogenide‐based thermoelectric materials have been considered as an alternative for PbTe and GeTe because of their nontoxic and attractive properties. However, the reports on thermoelectric properties of GeSe are very limited with low power factor values. Herein, we report the effect of Cu substitution on mixed phase formation and thermoelectric performance of Ge1−xCuxSe (0.0 ≤ x ≤ 0.4) samples. In the prepared samples, the multiphases of orthorhombic/Imm2 Cu2GeSe3, cubic/Fm3m Cu2Se, hexagonal/P63mc CuSe, hexagonal/P63/mmc Cu8GeSe6, and orthorhombic/Pnnm CuSe2 were observed, due to incorporation of Cu in GeSe as confirmed by X‐ray diffraction analysis. The electrical resistivity of the samples decreased with x values due to the formation of Cu‐rich phases. Moreover, the mobility of GeSe increased by one order through Cu substitution resulting from the percolation effect in the sample with multiphases. A high‐power factor of 720 μW/K2m was achieved at 500 K for the Ge0.6Cu0.4Se samples with thermal conductivity (κL) of 1.47 Wm−1κ−1 at the same temperature which resulted in a high figure of merit (ZT) ~ 0.26, due to Cu‐rich multiphases in the sample.
ZT of GeSe is significantly enhanced by multiphase. Cu substitution changes the phases in the material and the Cu‐rich phases modulate the carrier concentration which results in high ZT. |
| doi_str_mv | 10.1002/er.8413 |
| format | Article |
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Recently, lead and tellurium‐free GeSe chalcogenide‐based thermoelectric materials have been considered as an alternative for PbTe and GeTe because of their nontoxic and attractive properties. However, the reports on thermoelectric properties of GeSe are very limited with low power factor values. Herein, we report the effect of Cu substitution on mixed phase formation and thermoelectric performance of Ge1−xCuxSe (0.0 ≤ x ≤ 0.4) samples. In the prepared samples, the multiphases of orthorhombic/Imm2 Cu2GeSe3, cubic/Fm3m Cu2Se, hexagonal/P63mc CuSe, hexagonal/P63/mmc Cu8GeSe6, and orthorhombic/Pnnm CuSe2 were observed, due to incorporation of Cu in GeSe as confirmed by X‐ray diffraction analysis. The electrical resistivity of the samples decreased with x values due to the formation of Cu‐rich phases. Moreover, the mobility of GeSe increased by one order through Cu substitution resulting from the percolation effect in the sample with multiphases. A high‐power factor of 720 μW/K2m was achieved at 500 K for the Ge0.6Cu0.4Se samples with thermal conductivity (κL) of 1.47 Wm−1κ−1 at the same temperature which resulted in a high figure of merit (ZT) ~ 0.26, due to Cu‐rich multiphases in the sample.
ZT of GeSe is significantly enhanced by multiphase. Cu substitution changes the phases in the material and the Cu‐rich phases modulate the carrier concentration which results in high ZT.</description><identifier>ISSN: 0363-907X</identifier><identifier>EISSN: 1099-114X</identifier><identifier>DOI: 10.1002/er.8413</identifier><language>eng</language><publisher>Chichester, UK: John Wiley & Sons, Inc</publisher><subject>Copper ; Copper selenides ; Electrical resistivity ; Figure of merit ; GeSe ; Hydrogen decrepitation ; hydrogen decrepitation method ; lattice thermal conductivity ; Materials substitution ; multiphase ; Percolation ; Power factor ; power factor and ZT ; Properties ; Tellurium ; Thermal conductivity ; Thermoelectric materials</subject><ispartof>International journal of energy research, 2022-10, Vol.46 (12), p.17455-17464</ispartof><rights>2022 John Wiley & Sons Ltd.</rights><rights>2022 John Wiley & Sons, Ltd.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2893-c84a3888ceb505af7bae8b0555534c64ddce4a1d9478181281906c06113724ce3</citedby><cites>FETCH-LOGICAL-c2893-c84a3888ceb505af7bae8b0555534c64ddce4a1d9478181281906c06113724ce3</cites><orcidid>0000-0002-5165-5096 ; 0000-0003-4175-2033</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fer.8413$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fer.8413$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27903,27904,45553,45554</link.rule.ids></links><search><creatorcontrib>Sidharth, D.</creatorcontrib><creatorcontrib>Alagar Nedunchezhian, A.S.</creatorcontrib><creatorcontrib>Rajkumar, R.</creatorcontrib><creatorcontrib>Kalaiarasan, K.</creatorcontrib><creatorcontrib>Arivanandhan, M.</creatorcontrib><creatorcontrib>Fujiwara, K.</creatorcontrib><creatorcontrib>Anbalagan, G.</creatorcontrib><creatorcontrib>Jayavel, R.</creatorcontrib><title>Thermoelectric performance of multiphase GeSe‐CuSe composites prepared by hydrogen decrepitation method</title><title>International journal of energy research</title><description>Summary
Recently, lead and tellurium‐free GeSe chalcogenide‐based thermoelectric materials have been considered as an alternative for PbTe and GeTe because of their nontoxic and attractive properties. However, the reports on thermoelectric properties of GeSe are very limited with low power factor values. Herein, we report the effect of Cu substitution on mixed phase formation and thermoelectric performance of Ge1−xCuxSe (0.0 ≤ x ≤ 0.4) samples. In the prepared samples, the multiphases of orthorhombic/Imm2 Cu2GeSe3, cubic/Fm3m Cu2Se, hexagonal/P63mc CuSe, hexagonal/P63/mmc Cu8GeSe6, and orthorhombic/Pnnm CuSe2 were observed, due to incorporation of Cu in GeSe as confirmed by X‐ray diffraction analysis. The electrical resistivity of the samples decreased with x values due to the formation of Cu‐rich phases. Moreover, the mobility of GeSe increased by one order through Cu substitution resulting from the percolation effect in the sample with multiphases. A high‐power factor of 720 μW/K2m was achieved at 500 K for the Ge0.6Cu0.4Se samples with thermal conductivity (κL) of 1.47 Wm−1κ−1 at the same temperature which resulted in a high figure of merit (ZT) ~ 0.26, due to Cu‐rich multiphases in the sample.
ZT of GeSe is significantly enhanced by multiphase. Cu substitution changes the phases in the material and the Cu‐rich phases modulate the carrier concentration which results in high ZT.</description><subject>Copper</subject><subject>Copper selenides</subject><subject>Electrical resistivity</subject><subject>Figure of merit</subject><subject>GeSe</subject><subject>Hydrogen decrepitation</subject><subject>hydrogen decrepitation method</subject><subject>lattice thermal conductivity</subject><subject>Materials substitution</subject><subject>multiphase</subject><subject>Percolation</subject><subject>Power factor</subject><subject>power factor and ZT</subject><subject>Properties</subject><subject>Tellurium</subject><subject>Thermal conductivity</subject><subject>Thermoelectric materials</subject><issn>0363-907X</issn><issn>1099-114X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp10FFLwzAQAOAgCs4p_oWADz5IZ9KkbfooY5vCQHAT9hbS9Goz2qYmLdI3f4K_0V9i53z1Xg7uvruDQ-iakhklJLwHNxOcshM0oSRNA0r57hRNCItZkJJkd44uvN8TMvZoMkFmW4KrLVSgO2c0bsEV1tWq0YBtgeu-6kxbKg94BRv4_vya9xvA2tat9aYDj1sHrXKQ42zA5ZA7-wYNzkGPZdOpztgG19CVNr9EZ4WqPFz95Sl6XS6288dg_bx6mj-sAx2KlAVacMWEEBqyiESqSDIFIiPRGIzrmOe5Bq5onvJEUEFDQVMSaxJTypKQa2BTdHPc2zr73oPv5N72rhlPyjChPIzIODaq26PSznrvoJCtM7Vyg6REHv4owcnDH0d5d5QfpoLhPyYXL7_6B-3BdPA</recordid><startdate>20221010</startdate><enddate>20221010</enddate><creator>Sidharth, D.</creator><creator>Alagar Nedunchezhian, A.S.</creator><creator>Rajkumar, R.</creator><creator>Kalaiarasan, K.</creator><creator>Arivanandhan, M.</creator><creator>Fujiwara, K.</creator><creator>Anbalagan, G.</creator><creator>Jayavel, R.</creator><general>John Wiley & Sons, Inc</general><general>Hindawi Limited</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7ST</scope><scope>7TB</scope><scope>7TN</scope><scope>8FD</scope><scope>C1K</scope><scope>F1W</scope><scope>F28</scope><scope>FR3</scope><scope>H96</scope><scope>KR7</scope><scope>L.G</scope><scope>L7M</scope><scope>SOI</scope><orcidid>https://orcid.org/0000-0002-5165-5096</orcidid><orcidid>https://orcid.org/0000-0003-4175-2033</orcidid></search><sort><creationdate>20221010</creationdate><title>Thermoelectric performance of multiphase GeSe‐CuSe composites prepared by hydrogen decrepitation method</title><author>Sidharth, D. ; Alagar Nedunchezhian, A.S. ; Rajkumar, R. ; Kalaiarasan, K. ; Arivanandhan, M. ; Fujiwara, K. ; Anbalagan, G. ; Jayavel, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2893-c84a3888ceb505af7bae8b0555534c64ddce4a1d9478181281906c06113724ce3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Copper</topic><topic>Copper selenides</topic><topic>Electrical resistivity</topic><topic>Figure of merit</topic><topic>GeSe</topic><topic>Hydrogen decrepitation</topic><topic>hydrogen decrepitation method</topic><topic>lattice thermal conductivity</topic><topic>Materials substitution</topic><topic>multiphase</topic><topic>Percolation</topic><topic>Power factor</topic><topic>power factor and ZT</topic><topic>Properties</topic><topic>Tellurium</topic><topic>Thermal conductivity</topic><topic>Thermoelectric materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sidharth, D.</creatorcontrib><creatorcontrib>Alagar Nedunchezhian, A.S.</creatorcontrib><creatorcontrib>Rajkumar, R.</creatorcontrib><creatorcontrib>Kalaiarasan, K.</creatorcontrib><creatorcontrib>Arivanandhan, M.</creatorcontrib><creatorcontrib>Fujiwara, K.</creatorcontrib><creatorcontrib>Anbalagan, G.</creatorcontrib><creatorcontrib>Jayavel, R.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Environment Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Oceanic Abstracts</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ASFA: Aquatic Sciences and Fisheries Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aquatic Science & Fisheries Abstracts (ASFA) 2: Ocean Technology, Policy & Non-Living Resources</collection><collection>Civil Engineering Abstracts</collection><collection>Aquatic Science & Fisheries Abstracts (ASFA) Professional</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Environment Abstracts</collection><jtitle>International journal of energy research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sidharth, D.</au><au>Alagar Nedunchezhian, A.S.</au><au>Rajkumar, R.</au><au>Kalaiarasan, K.</au><au>Arivanandhan, M.</au><au>Fujiwara, K.</au><au>Anbalagan, G.</au><au>Jayavel, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermoelectric performance of multiphase GeSe‐CuSe composites prepared by hydrogen decrepitation method</atitle><jtitle>International journal of energy research</jtitle><date>2022-10-10</date><risdate>2022</risdate><volume>46</volume><issue>12</issue><spage>17455</spage><epage>17464</epage><pages>17455-17464</pages><issn>0363-907X</issn><eissn>1099-114X</eissn><abstract>Summary
Recently, lead and tellurium‐free GeSe chalcogenide‐based thermoelectric materials have been considered as an alternative for PbTe and GeTe because of their nontoxic and attractive properties. However, the reports on thermoelectric properties of GeSe are very limited with low power factor values. Herein, we report the effect of Cu substitution on mixed phase formation and thermoelectric performance of Ge1−xCuxSe (0.0 ≤ x ≤ 0.4) samples. In the prepared samples, the multiphases of orthorhombic/Imm2 Cu2GeSe3, cubic/Fm3m Cu2Se, hexagonal/P63mc CuSe, hexagonal/P63/mmc Cu8GeSe6, and orthorhombic/Pnnm CuSe2 were observed, due to incorporation of Cu in GeSe as confirmed by X‐ray diffraction analysis. The electrical resistivity of the samples decreased with x values due to the formation of Cu‐rich phases. Moreover, the mobility of GeSe increased by one order through Cu substitution resulting from the percolation effect in the sample with multiphases. A high‐power factor of 720 μW/K2m was achieved at 500 K for the Ge0.6Cu0.4Se samples with thermal conductivity (κL) of 1.47 Wm−1κ−1 at the same temperature which resulted in a high figure of merit (ZT) ~ 0.26, due to Cu‐rich multiphases in the sample.
ZT of GeSe is significantly enhanced by multiphase. Cu substitution changes the phases in the material and the Cu‐rich phases modulate the carrier concentration which results in high ZT.</abstract><cop>Chichester, UK</cop><pub>John Wiley & Sons, Inc</pub><doi>10.1002/er.8413</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0002-5165-5096</orcidid><orcidid>https://orcid.org/0000-0003-4175-2033</orcidid></addata></record> |
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| subjects | Copper Copper selenides Electrical resistivity Figure of merit GeSe Hydrogen decrepitation hydrogen decrepitation method lattice thermal conductivity Materials substitution multiphase Percolation Power factor power factor and ZT Properties Tellurium Thermal conductivity Thermoelectric materials |
| title | Thermoelectric performance of multiphase GeSe‐CuSe composites prepared by hydrogen decrepitation method |
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