A 26–30 GHz GaN HEMT Low-Noise Amplifier Employing a Series Inductor-Based Stability Enhancement Technique

This article presents a 26–30 GHz gallium nitride (GaN) high electron mobility transistor (HEMT) low-noise amplifier (LNA) for fifth-generation base station applications. In the proposed design, a series inductor-based stability enhancement technique was utilized to improve the reverse isolation and...

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Veröffentlicht in:	Electronics (Basel) 2022-09, Vol.11 (17), p.2716
Hauptverfasser:	Ahn, Hyunbae, Ji, Honggu, Kang, Dongmin, Son, Sung-Min, Lee, Sanghun, Han, Junghwan
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Amplifiers (Electronics) Circuit design Circuits Design Design and construction Energy Gallium compounds Gallium nitrides Heat conductivity High electron mobility transistors Methods Noise levels Parasitics (electronics) Power consumption R&D Receivers & amplifiers Research & development Semiconductor devices Silicon carbide Stability criteria Third order intercept point Transistors
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