Manipulating the magneto-resistance of Bi2Se3 thin films by strontium doping
We systematically studied the magneto-resistance of strontium (Sr) doped topological insulator (TI) Bi 2Se 3 films. For Bi 2Se 3 films with relatively large classic magneto-resistance, we found that slightly Sr doping can completely suppress the classic magneto-resistance and make the weak antilocal...
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| Veröffentlicht in: | Journal of applied physics 2022-09, Vol.132 (9) |
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| container_title | Journal of applied physics |
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| creator | Hu, Jiayuan Jiang, Wenxiang Lu, Qi Xu, Chenhang Wu, Jiangtao Jiao, Jinlong Wang, Guohua Ma, Jie Qian, Dong |
| description | We systematically studied the magneto-resistance of strontium (Sr) doped topological insulator (TI) Bi
2Se
3 films. For Bi
2Se
3 films with relatively large classic magneto-resistance, we found that slightly Sr doping can completely suppress the classic magneto-resistance and make the weak antilocalization effect dominate in the weak-magnetic-field region. Consequently, the value of the magneto-resistance is enhanced by more than 2.7 times at 0.2 T in slightly doped samples. In contrast, in the strong-magnetic-field region, the magneto-resistance is strongly reduced by doping but exhibits linear magneto-resistance behavior. Our results suggest that the linear magneto-resistance behavior originates from the mobility fluctuation induced by disorder described by the Parish–Littlewood model. Our findings not only gain insights into the doping effect on the topological insulator but also provide an effective way to manipulate the magneto-transport properties of TI for potential applications in future. |
| doi_str_mv | 10.1063/5.0092075 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_proquest_journals_2709178251</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2709178251</sourcerecordid><originalsourceid>FETCH-LOGICAL-c257t-e2a407cc94dec679c289d4d84524299cbc679663d60e1ee3c10edb8415b6f9043</originalsourceid><addsrcrecordid>eNp90M9LwzAUB_AgCs7pwf8g4Emh8yVtmuaow18w8aCeQ5qmM2NNapIK--_t2NCD4OnB4_O-D74InROYESjzazYDEBQ4O0ATApXIOGNwiCYAlGSV4OIYncS4AiCkysUELZ6Vs_2wVsm6JU4fBndq6UzyWTDRxqScNti3-NbSV5OPwDrc2nUXcb3BMQXvkh063Ph-vD9FR61aR3O2n1P0fn_3Nn_MFi8PT_ObRaYp4ykzVBXAtRZFY3TJhaaVaIqmKhgtqBC63i7LMm9KMMSYXBMwTV0VhNVlK6DIp-hil9sH_zmYmOTKD8GNLyXlIAivKCOjutwpHXyMwbSyD7ZTYSMJyG1Zksl9WaO92tmobRq78O4Hf_nwC2XftP_hv8nfGbN3KQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2709178251</pqid></control><display><type>article</type><title>Manipulating the magneto-resistance of Bi2Se3 thin films by strontium doping</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Hu, Jiayuan ; Jiang, Wenxiang ; Lu, Qi ; Xu, Chenhang ; Wu, Jiangtao ; Jiao, Jinlong ; Wang, Guohua ; Ma, Jie ; Qian, Dong</creator><creatorcontrib>Hu, Jiayuan ; Jiang, Wenxiang ; Lu, Qi ; Xu, Chenhang ; Wu, Jiangtao ; Jiao, Jinlong ; Wang, Guohua ; Ma, Jie ; Qian, Dong</creatorcontrib><description>We systematically studied the magneto-resistance of strontium (Sr) doped topological insulator (TI) Bi
2Se
3 films. For Bi
2Se
3 films with relatively large classic magneto-resistance, we found that slightly Sr doping can completely suppress the classic magneto-resistance and make the weak antilocalization effect dominate in the weak-magnetic-field region. Consequently, the value of the magneto-resistance is enhanced by more than 2.7 times at 0.2 T in slightly doped samples. In contrast, in the strong-magnetic-field region, the magneto-resistance is strongly reduced by doping but exhibits linear magneto-resistance behavior. Our results suggest that the linear magneto-resistance behavior originates from the mobility fluctuation induced by disorder described by the Parish–Littlewood model. Our findings not only gain insights into the doping effect on the topological insulator but also provide an effective way to manipulate the magneto-transport properties of TI for potential applications in future.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0092075</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Doping ; Magnetic properties ; Thin films ; Topological insulators ; Transport properties</subject><ispartof>Journal of applied physics, 2022-09, Vol.132 (9)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-e2a407cc94dec679c289d4d84524299cbc679663d60e1ee3c10edb8415b6f9043</citedby><cites>FETCH-LOGICAL-c257t-e2a407cc94dec679c289d4d84524299cbc679663d60e1ee3c10edb8415b6f9043</cites><orcidid>0000-0003-1610-3568 ; 0000-0001-5891-8138</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/5.0092075$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76353</link.rule.ids></links><search><creatorcontrib>Hu, Jiayuan</creatorcontrib><creatorcontrib>Jiang, Wenxiang</creatorcontrib><creatorcontrib>Lu, Qi</creatorcontrib><creatorcontrib>Xu, Chenhang</creatorcontrib><creatorcontrib>Wu, Jiangtao</creatorcontrib><creatorcontrib>Jiao, Jinlong</creatorcontrib><creatorcontrib>Wang, Guohua</creatorcontrib><creatorcontrib>Ma, Jie</creatorcontrib><creatorcontrib>Qian, Dong</creatorcontrib><title>Manipulating the magneto-resistance of Bi2Se3 thin films by strontium doping</title><title>Journal of applied physics</title><description>We systematically studied the magneto-resistance of strontium (Sr) doped topological insulator (TI) Bi
2Se
3 films. For Bi
2Se
3 films with relatively large classic magneto-resistance, we found that slightly Sr doping can completely suppress the classic magneto-resistance and make the weak antilocalization effect dominate in the weak-magnetic-field region. Consequently, the value of the magneto-resistance is enhanced by more than 2.7 times at 0.2 T in slightly doped samples. In contrast, in the strong-magnetic-field region, the magneto-resistance is strongly reduced by doping but exhibits linear magneto-resistance behavior. Our results suggest that the linear magneto-resistance behavior originates from the mobility fluctuation induced by disorder described by the Parish–Littlewood model. Our findings not only gain insights into the doping effect on the topological insulator but also provide an effective way to manipulate the magneto-transport properties of TI for potential applications in future.</description><subject>Applied physics</subject><subject>Doping</subject><subject>Magnetic properties</subject><subject>Thin films</subject><subject>Topological insulators</subject><subject>Transport properties</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp90M9LwzAUB_AgCs7pwf8g4Emh8yVtmuaow18w8aCeQ5qmM2NNapIK--_t2NCD4OnB4_O-D74InROYESjzazYDEBQ4O0ATApXIOGNwiCYAlGSV4OIYncS4AiCkysUELZ6Vs_2wVsm6JU4fBndq6UzyWTDRxqScNti3-NbSV5OPwDrc2nUXcb3BMQXvkh063Ph-vD9FR61aR3O2n1P0fn_3Nn_MFi8PT_ObRaYp4ykzVBXAtRZFY3TJhaaVaIqmKhgtqBC63i7LMm9KMMSYXBMwTV0VhNVlK6DIp-hil9sH_zmYmOTKD8GNLyXlIAivKCOjutwpHXyMwbSyD7ZTYSMJyG1Zksl9WaO92tmobRq78O4Hf_nwC2XftP_hv8nfGbN3KQ</recordid><startdate>20220907</startdate><enddate>20220907</enddate><creator>Hu, Jiayuan</creator><creator>Jiang, Wenxiang</creator><creator>Lu, Qi</creator><creator>Xu, Chenhang</creator><creator>Wu, Jiangtao</creator><creator>Jiao, Jinlong</creator><creator>Wang, Guohua</creator><creator>Ma, Jie</creator><creator>Qian, Dong</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-1610-3568</orcidid><orcidid>https://orcid.org/0000-0001-5891-8138</orcidid></search><sort><creationdate>20220907</creationdate><title>Manipulating the magneto-resistance of Bi2Se3 thin films by strontium doping</title><author>Hu, Jiayuan ; Jiang, Wenxiang ; Lu, Qi ; Xu, Chenhang ; Wu, Jiangtao ; Jiao, Jinlong ; Wang, Guohua ; Ma, Jie ; Qian, Dong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-e2a407cc94dec679c289d4d84524299cbc679663d60e1ee3c10edb8415b6f9043</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Doping</topic><topic>Magnetic properties</topic><topic>Thin films</topic><topic>Topological insulators</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hu, Jiayuan</creatorcontrib><creatorcontrib>Jiang, Wenxiang</creatorcontrib><creatorcontrib>Lu, Qi</creatorcontrib><creatorcontrib>Xu, Chenhang</creatorcontrib><creatorcontrib>Wu, Jiangtao</creatorcontrib><creatorcontrib>Jiao, Jinlong</creatorcontrib><creatorcontrib>Wang, Guohua</creatorcontrib><creatorcontrib>Ma, Jie</creatorcontrib><creatorcontrib>Qian, Dong</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hu, Jiayuan</au><au>Jiang, Wenxiang</au><au>Lu, Qi</au><au>Xu, Chenhang</au><au>Wu, Jiangtao</au><au>Jiao, Jinlong</au><au>Wang, Guohua</au><au>Ma, Jie</au><au>Qian, Dong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Manipulating the magneto-resistance of Bi2Se3 thin films by strontium doping</atitle><jtitle>Journal of applied physics</jtitle><date>2022-09-07</date><risdate>2022</risdate><volume>132</volume><issue>9</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We systematically studied the magneto-resistance of strontium (Sr) doped topological insulator (TI) Bi
2Se
3 films. For Bi
2Se
3 films with relatively large classic magneto-resistance, we found that slightly Sr doping can completely suppress the classic magneto-resistance and make the weak antilocalization effect dominate in the weak-magnetic-field region. Consequently, the value of the magneto-resistance is enhanced by more than 2.7 times at 0.2 T in slightly doped samples. In contrast, in the strong-magnetic-field region, the magneto-resistance is strongly reduced by doping but exhibits linear magneto-resistance behavior. Our results suggest that the linear magneto-resistance behavior originates from the mobility fluctuation induced by disorder described by the Parish–Littlewood model. Our findings not only gain insights into the doping effect on the topological insulator but also provide an effective way to manipulate the magneto-transport properties of TI for potential applications in future.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0092075</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-1610-3568</orcidid><orcidid>https://orcid.org/0000-0001-5891-8138</orcidid></addata></record> |
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| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_proquest_journals_2709178251 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Doping Magnetic properties Thin films Topological insulators Transport properties |
| title | Manipulating the magneto-resistance of Bi2Se3 thin films by strontium doping |
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