5,291‐ppi OLED display enabled by monolithic integration of C‐axis‐aligned crystalline IGZO FET and Si CMOS

For the first time in the world, we have fabricated an organic light‐emitting diode (OLED) display that monolithically integrates Si CMOS and oxide semiconductor FETs (OSFETs). OSFETs can be monolithically stacked on Si CMOS. With this OS/Si monolithic stack technology, we have fabricated driver cir...

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Veröffentlicht in:Journal of the Society for Information Display 2022-09, Vol.30 (9), p.690-698
Hauptverfasser: Kato, Kiyoshi, Kobayashi, Hidetomo, Shishido, Hideaki, Isa, Toshiyuki, Aoyama, Tomoya, Jimbo, Yasuhiro, Hodo, Ryota, Kusunoki, Koji, Kunitake, Hitoshi, Yamazaki, Shunpei
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Sprache:eng
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Zusammenfassung:For the first time in the world, we have fabricated an organic light‐emitting diode (OLED) display that monolithically integrates Si CMOS and oxide semiconductor FETs (OSFETs). OSFETs can be monolithically stacked on Si CMOS. With this OS/Si monolithic stack technology, we have fabricated driver circuits with Si CMOS and pixel circuits with OSFETs. This enables displays to have thin bezels. In addition, fabricating pixel circuits with OSFETs, which have higher breakdown voltage than Si CMOS, allows the use of tandem OLED devices that require high driving voltage. This enables an OLED display with a pixel density over 5,000 ppi. For the first time in the world, we have fabricated an organic light‐emitting diode (OLED) display that monolithically integrates Si CMOS, oxide semiconductor FETs (OSFETs), and OLED devices. The panel fabricated is a thin‐bezel, >5,000 ppi OLED display with drivers embedded in the display area, enabling area savings of up to approximately 40%.
ISSN:1071-0922
1938-3657
DOI:10.1002/jsid.1167