Double Schottky metal–semiconductor–metal based GaN photodetectors with improved response using laser MBE technique
Present work demonstrates the fabrication of Gallium nitride (GaN) based ultraviolet metal–semiconductor–metal (MSM) photodetectors on Si(111) substrate using the Laser MBE technique. MSM photodetectors based on Au, Pd and ITO contacts were fabricated to study the effect of electrodes on the observe...
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| Veröffentlicht in: | Journal of materials research 2022-01, Vol.37 (2), p.457-469 |
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| creator | Yadav, Gunjan Gupta, Vinay Tomar, Monika |
| description | Present work demonstrates the fabrication of Gallium nitride (GaN) based ultraviolet metal–semiconductor–metal (MSM) photodetectors on Si(111) substrate using the Laser MBE technique. MSM photodetectors based on Au, Pd and ITO contacts were fabricated to study the effect of electrodes on the observed UV photoresponse. Temporal response of the fabricated photo-detectors at a regular interval of 20 s ON–OFF cycle revealed that ITO is the best-suited electrode material for the fabrication of photo-detectors with high detectivity, sensitivity and low dark current. The ITO/GaN/ITO double Schottky photodetector showed the maximum responsivity of 0.27 A/W at an applied bias of 1 V towards 325 nm wavelength radiation. The value of detectivity, dark current and the ratio of normalized photocurrent to dark current for ITO/GaN/ITO was found to be 1.73 × 10
13
Jones, 0.24 pA and 0.8 × 10
4
, which is significantly enhanced as compared to the corresponding values reported by other research groups for MSM photodetectors.
Graphical abstract |
| doi_str_mv | 10.1557/s43578-021-00467-0 |
| format | Article |
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13
Jones, 0.24 pA and 0.8 × 10
4
, which is significantly enhanced as compared to the corresponding values reported by other research groups for MSM photodetectors.
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13
Jones, 0.24 pA and 0.8 × 10
4
, which is significantly enhanced as compared to the corresponding values reported by other research groups for MSM photodetectors.
Graphical abstract</description><subject>Applied and Technical Physics</subject><subject>Biomaterials</subject><subject>Chemistry and Materials Science</subject><subject>Dark current</subject><subject>Electrode materials</subject><subject>Electrodes</subject><subject>Gallium nitrides</subject><subject>Gold</subject><subject>Inorganic Chemistry</subject><subject>Materials Engineering</subject><subject>Materials research</subject><subject>Materials Science</subject><subject>Nanotechnology</subject><subject>Palladium</subject><subject>Photoelectric effect</subject><subject>Photometers</subject><subject>Silicon substrates</subject><issn>0884-2914</issn><issn>2044-5326</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kE1OwzAQhS0EEqVwAVaWWAfGf4mzhAIFqcACWFv5cdqUNA62Q9Udd-CGnAS3QWLHajQz35s3egidEjgnQiQXjjORyAgoiQB4nESwh0YUOI8Eo_E-GoGUPKIp4YfoyLklABGQ8BFaX5s-bzR-LhbG-7cNXmmfNd-fX06v6sK0ZV94Y0O_m-M8c7rE0-wRd4E3pfZ6u3d4XfsFrledNR8BsNp1pnUa965u57gJKosfrm5wwBdt_d7rY3RQZY3TJ791jF5vb14md9HsaXo_uZxFBeWpjwgTutIJS3UKsizzknKgkIoC4krHhFCZCs6yinBWEk5YRUpKZcHilFQZ5JKN0dlwN3wWbJ1XS9PbNlgqmoCkEkTKA0UHqrDGOasr1dl6ldmNIqC2AashYBUCVruAFQQRG0QuwO1c27_T_6h-AOxrgYk</recordid><startdate>20220128</startdate><enddate>20220128</enddate><creator>Yadav, Gunjan</creator><creator>Gupta, Vinay</creator><creator>Tomar, Monika</creator><general>Springer International Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20220128</creationdate><title>Double Schottky metal–semiconductor–metal based GaN photodetectors with improved response using laser MBE technique</title><author>Yadav, Gunjan ; Gupta, Vinay ; Tomar, Monika</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c249t-135efe739e908ddbd2402095c06fe611289543af143d1413f1d228c3691fa0b83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied and Technical Physics</topic><topic>Biomaterials</topic><topic>Chemistry and Materials Science</topic><topic>Dark current</topic><topic>Electrode materials</topic><topic>Electrodes</topic><topic>Gallium nitrides</topic><topic>Gold</topic><topic>Inorganic Chemistry</topic><topic>Materials Engineering</topic><topic>Materials research</topic><topic>Materials Science</topic><topic>Nanotechnology</topic><topic>Palladium</topic><topic>Photoelectric effect</topic><topic>Photometers</topic><topic>Silicon substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yadav, Gunjan</creatorcontrib><creatorcontrib>Gupta, Vinay</creatorcontrib><creatorcontrib>Tomar, Monika</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of materials research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yadav, Gunjan</au><au>Gupta, Vinay</au><au>Tomar, Monika</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Double Schottky metal–semiconductor–metal based GaN photodetectors with improved response using laser MBE technique</atitle><jtitle>Journal of materials research</jtitle><stitle>Journal of Materials Research</stitle><date>2022-01-28</date><risdate>2022</risdate><volume>37</volume><issue>2</issue><spage>457</spage><epage>469</epage><pages>457-469</pages><issn>0884-2914</issn><eissn>2044-5326</eissn><abstract>Present work demonstrates the fabrication of Gallium nitride (GaN) based ultraviolet metal–semiconductor–metal (MSM) photodetectors on Si(111) substrate using the Laser MBE technique. MSM photodetectors based on Au, Pd and ITO contacts were fabricated to study the effect of electrodes on the observed UV photoresponse. Temporal response of the fabricated photo-detectors at a regular interval of 20 s ON–OFF cycle revealed that ITO is the best-suited electrode material for the fabrication of photo-detectors with high detectivity, sensitivity and low dark current. The ITO/GaN/ITO double Schottky photodetector showed the maximum responsivity of 0.27 A/W at an applied bias of 1 V towards 325 nm wavelength radiation. The value of detectivity, dark current and the ratio of normalized photocurrent to dark current for ITO/GaN/ITO was found to be 1.73 × 10
13
Jones, 0.24 pA and 0.8 × 10
4
, which is significantly enhanced as compared to the corresponding values reported by other research groups for MSM photodetectors.
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| subjects | Applied and Technical Physics Biomaterials Chemistry and Materials Science Dark current Electrode materials Electrodes Gallium nitrides Gold Inorganic Chemistry Materials Engineering Materials research Materials Science Nanotechnology Palladium Photoelectric effect Photometers Silicon substrates |
| title | Double Schottky metal–semiconductor–metal based GaN photodetectors with improved response using laser MBE technique |
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