Quenching effects on electrical properties of Cu-doped (Bi1/2Na1/2)TiO3-based solid solution ceramics

Quenching effects on electrical and piezoelectric properties were investigated for Cu-doped (Bi 1/2 Na 1/2 )TiO 3 (BNT)-based solid solution systems, 0.90(Bi 1/2 Na 1/2 )TiO 3 –0.06BaTiO 3 –0.04(Bi 1/2 Li 1/2 )TiO 3 (BNLBT), aiming to increase the depolarization temperature T d without deteriorating...

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Veröffentlicht in:Journal of materials research 2021-03, Vol.36 (5), p.1097-1104
Hauptverfasser: Harada, Seiji, Takagi, Yuka, Nagata, Hajime, Takenaka, Tadashi
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Takagi, Yuka
Nagata, Hajime
Takenaka, Tadashi
description Quenching effects on electrical and piezoelectric properties were investigated for Cu-doped (Bi 1/2 Na 1/2 )TiO 3 (BNT)-based solid solution systems, 0.90(Bi 1/2 Na 1/2 )TiO 3 –0.06BaTiO 3 –0.04(Bi 1/2 Li 1/2 )TiO 3 (BNLBT), aiming to increase the depolarization temperature T d without deteriorating the piezoelectric properties. A dense BNLBT ceramics doped with CuO 1.0 wt% was fabricated by a conventional ceramic fabrication process with a low-sintering temperature at 940 °C, which is 200 °C lower than those for non-doped BNLBT ceramics. In addition, the CuO-doped BNLBT ceramic was quenched immediately after the sintering process at 940 °C, and the piezoelectric constant and T d were measured. The T d values of CuO-doped BNLBT systems with and without quenching were 143 and 78 °C, respectively. This showed that T d Cu-doped ceramics increased by approximately 60 °C due to quenching. In addition, the electromechanical coupling factors k 33 of quenched and non-quenched Cu-doped BNLBT ceramics were approximately 0.58, showing no significant deterioration of piezoelectric activity caused by quenching. Graphic abstract
doi_str_mv 10.1557/s43578-020-00048-7
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A dense BNLBT ceramics doped with CuO 1.0 wt% was fabricated by a conventional ceramic fabrication process with a low-sintering temperature at 940 °C, which is 200 °C lower than those for non-doped BNLBT ceramics. In addition, the CuO-doped BNLBT ceramic was quenched immediately after the sintering process at 940 °C, and the piezoelectric constant and T d were measured. The T d values of CuO-doped BNLBT systems with and without quenching were 143 and 78 °C, respectively. This showed that T d Cu-doped ceramics increased by approximately 60 °C due to quenching. In addition, the electromechanical coupling factors k 33 of quenched and non-quenched Cu-doped BNLBT ceramics were approximately 0.58, showing no significant deterioration of piezoelectric activity caused by quenching. 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A dense BNLBT ceramics doped with CuO 1.0 wt% was fabricated by a conventional ceramic fabrication process with a low-sintering temperature at 940 °C, which is 200 °C lower than those for non-doped BNLBT ceramics. In addition, the CuO-doped BNLBT ceramic was quenched immediately after the sintering process at 940 °C, and the piezoelectric constant and T d were measured. The T d values of CuO-doped BNLBT systems with and without quenching were 143 and 78 °C, respectively. This showed that T d Cu-doped ceramics increased by approximately 60 °C due to quenching. In addition, the electromechanical coupling factors k 33 of quenched and non-quenched Cu-doped BNLBT ceramics were approximately 0.58, showing no significant deterioration of piezoelectric activity caused by quenching. 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subjects Applied and Technical Physics
Biomaterials
Ceramics
Chemistry and Materials Science
Copper
Copper oxides
Depolarization
Electrical properties
Inorganic Chemistry
Invited Paper
Materials Engineering
Materials research
Materials Science
Nanotechnology
Piezoelectricity
Quenching
Sintering
Solid solutions
title Quenching effects on electrical properties of Cu-doped (Bi1/2Na1/2)TiO3-based solid solution ceramics
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