Study on Schottky Al x Ga1- x N/GaN IMPATT Diodes for Millimeter-Wave Application

This article proposes a Schottky aluminum gallium nitride (AlGaN)/GaN single-drift-region (SDR) IMPATT diode that uses AlGaN as the avalanche active layer. Compared with GaN, AlGaN has a wider bandgap and better breakdown characteristics. These features can significantly improve the device performan...

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Veröffentlicht in:	IEEE transactions on electron devices 2022-01, Vol.69 (9), p.4853
Hauptverfasser:	Yang, Dai, Dang, Jiangtao, Lei, Xiaoyi, Zhang, Yunyao, Yan, Junfeng, Wu, Zhao, Chen, Xiaojiang, Zhao, Shenglei
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Avalanche diodes Breakdown Direct current Electric potential Gallium nitrides Millimeter waves Radio frequency Voltage
Online-Zugang:	Volltext
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