New insight into bonding energy and stress distribution of graphene oxide/hexagonal boron nitride: Functional group and grain boundary effect

The stress accumulation and nonlinear buckling induced by grain boundaries (GBs) in two-dimensional (2D) interface and functional groups (FGs) on the surface of 2D are different from those of three-dimensional (3D) blocks. Topological and geometrical effects of defects and FGs in 2D materials will s...

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Veröffentlicht in:Diamond and related materials 2022-08, Vol.127, p.109185, Article 109185
Hauptverfasser: Fan, Lei, Bian, Zuguang, Huang, Zhuye, Song, Fangyuan, Xia, Yongqiang, Xu, Jin
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container_start_page 109185
container_title Diamond and related materials
container_volume 127
creator Fan, Lei
Bian, Zuguang
Huang, Zhuye
Song, Fangyuan
Xia, Yongqiang
Xu, Jin
description The stress accumulation and nonlinear buckling induced by grain boundaries (GBs) in two-dimensional (2D) interface and functional groups (FGs) on the surface of 2D are different from those of three-dimensional (3D) blocks. Topological and geometrical effects of defects and FGs in 2D materials will significantly affect their mechanical properties and transport behavior. A new graphene oxide/h-BN interface with GBs model (GO-BN-GBs) was constructed to study the built-in distortion stress and out-of-plane deformation caused by GBs and FGs under different strains. Considering GBs type, FGs type, FGs density and also the effect of distance between FGs and GBs on the bonding energy and stress distribution of GO-BN-GBs interface were studied by molecular dynamics (MD). The results show that the GBs and FGs exert a remarkable reduction in failure stress and strain as well as Von-mises stress, thereby decreasing the stability capacity and interfacial mechanical properties of GS under axial tension. However, the presence of GBs and FGs can slight improve the bending rigidities of 2D materials due to their interactions induced out-plane deformation. In addition, the geometrical effects and built-in distorted stress very sensitive to FGs types, FGs density and distance between GBs and FGs. The distortion stress and geometrical deformation caused by GBs and FGs will enrich the growth morphology of 2D materials, and will also lead to more interesting scientific problems, which is expected to become a new growth point of 2D materials research in the future. [Display omitted] •A new graphene oxide/h-BN interface with GBs model (GO-BN-GBs) was constructed, which was used to study the built-in distortion stress and out-of-plane deformation caused by GBs and FGs under different strains.•GBs and FGs exert a remarkable reduction in failure stress and strain. However, the presence of GBs and FGs can slight improve the bending rigidities of 2D materials due to their interactions induced out-plane deformation.•The distortion stress and geometrical deformation caused by GBs and FGs will enrich the growth morphology of 2D materials, and will also lead to more interesting scientific problems.
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Topological and geometrical effects of defects and FGs in 2D materials will significantly affect their mechanical properties and transport behavior. A new graphene oxide/h-BN interface with GBs model (GO-BN-GBs) was constructed to study the built-in distortion stress and out-of-plane deformation caused by GBs and FGs under different strains. Considering GBs type, FGs type, FGs density and also the effect of distance between FGs and GBs on the bonding energy and stress distribution of GO-BN-GBs interface were studied by molecular dynamics (MD). The results show that the GBs and FGs exert a remarkable reduction in failure stress and strain as well as Von-mises stress, thereby decreasing the stability capacity and interfacial mechanical properties of GS under axial tension. However, the presence of GBs and FGs can slight improve the bending rigidities of 2D materials due to their interactions induced out-plane deformation. In addition, the geometrical effects and built-in distorted stress very sensitive to FGs types, FGs density and distance between GBs and FGs. The distortion stress and geometrical deformation caused by GBs and FGs will enrich the growth morphology of 2D materials, and will also lead to more interesting scientific problems, which is expected to become a new growth point of 2D materials research in the future. [Display omitted] •A new graphene oxide/h-BN interface with GBs model (GO-BN-GBs) was constructed, which was used to study the built-in distortion stress and out-of-plane deformation caused by GBs and FGs under different strains.•GBs and FGs exert a remarkable reduction in failure stress and strain. However, the presence of GBs and FGs can slight improve the bending rigidities of 2D materials due to their interactions induced out-plane deformation.•The distortion stress and geometrical deformation caused by GBs and FGs will enrich the growth morphology of 2D materials, and will also lead to more interesting scientific problems.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2022.109185</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Boron nitride ; Built-in distorted stress ; Crystal defects ; Deformation ; Deformation effects ; Density ; Distortion ; Energy distribution ; Functional groups ; Geometrical effects ; Grain boundaries ; Graphene ; Graphene oxide/h-BN interfaces ; Interface stability ; Interfacial mechanical properties ; Mechanical properties ; Molecular dynamics ; Stress distribution ; Topological structure ; Two dimensional materials</subject><ispartof>Diamond and related materials, 2022-08, Vol.127, p.109185, Article 109185</ispartof><rights>2022</rights><rights>Copyright Elsevier BV Aug 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-f7d632474fd606919834b4eb19e933ca09f859ec7500ff6d1219167965f8768b3</citedby><cites>FETCH-LOGICAL-c337t-f7d632474fd606919834b4eb19e933ca09f859ec7500ff6d1219167965f8768b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0925963522003673$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Fan, Lei</creatorcontrib><creatorcontrib>Bian, Zuguang</creatorcontrib><creatorcontrib>Huang, Zhuye</creatorcontrib><creatorcontrib>Song, Fangyuan</creatorcontrib><creatorcontrib>Xia, Yongqiang</creatorcontrib><creatorcontrib>Xu, Jin</creatorcontrib><title>New insight into bonding energy and stress distribution of graphene oxide/hexagonal boron nitride: Functional group and grain boundary effect</title><title>Diamond and related materials</title><description>The stress accumulation and nonlinear buckling induced by grain boundaries (GBs) in two-dimensional (2D) interface and functional groups (FGs) on the surface of 2D are different from those of three-dimensional (3D) blocks. Topological and geometrical effects of defects and FGs in 2D materials will significantly affect their mechanical properties and transport behavior. A new graphene oxide/h-BN interface with GBs model (GO-BN-GBs) was constructed to study the built-in distortion stress and out-of-plane deformation caused by GBs and FGs under different strains. Considering GBs type, FGs type, FGs density and also the effect of distance between FGs and GBs on the bonding energy and stress distribution of GO-BN-GBs interface were studied by molecular dynamics (MD). The results show that the GBs and FGs exert a remarkable reduction in failure stress and strain as well as Von-mises stress, thereby decreasing the stability capacity and interfacial mechanical properties of GS under axial tension. However, the presence of GBs and FGs can slight improve the bending rigidities of 2D materials due to their interactions induced out-plane deformation. 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subjects Boron nitride
Built-in distorted stress
Crystal defects
Deformation
Deformation effects
Density
Distortion
Energy distribution
Functional groups
Geometrical effects
Grain boundaries
Graphene
Graphene oxide/h-BN interfaces
Interface stability
Interfacial mechanical properties
Mechanical properties
Molecular dynamics
Stress distribution
Topological structure
Two dimensional materials
title New insight into bonding energy and stress distribution of graphene oxide/hexagonal boron nitride: Functional group and grain boundary effect
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