Single silicon waveguide MRR based Fano resonance in the whole spectral bands

To improve the integration of Fano devices, we design a T-shaped waveguide coupling micro-ring resonator (MRR) structure to achieve a single cavity with Fano resonance in the whole spectral bands. The mathematical relationship between the phase factor, the coupling coefficient of the bus waveguide, and the Fano resonance slope extinction ratio (ER) is established. The electron beam exposure process is used to obtain a device with an insertion loss of ∼3 dB. The maximum ER of the Fano lineshape exceeds 15 dB, and the slope ratio ( SR ) is 251.3 dB/nm. This design improves the compactness of the Fano resonant device.