Transient Response of ESD Protection Devices for a High-Speed I/O Interface
System-efficient electrostatic discharge (ESD) design (SEED) models of a diode and transient voltage suppressor (TVS) were developed to study their transient response in a high-speed input/output interface. Previously reported SEED models were improved to strengthen their convergence stability and f...
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Veröffentlicht in: | IEEE transactions on electromagnetic compatibility 2022-08, Vol.64 (4), p.907-914 |
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creator | Zhou, Jianchi Xu, Yang Bub, Sergej Holland, Steffen Meiguni, Javad Soleiman Pommerenke, David Beetner, Daryl G. |
description | System-efficient electrostatic discharge (ESD) design (SEED) models of a diode and transient voltage suppressor (TVS) were developed to study their transient response in a high-speed input/output interface. Previously reported SEED models were improved to strengthen their convergence stability and facilitate accurate predictions over a wide range of conditions. These improvements were required to accurately capture the race conditions between the TVS and on -chip diode, where the diode's turn on may prevent turn on of the TVS. Simulations and measurements were performed to demonstrate the impact of the ESD pulse's rise time on race conditions. During a race, results showed the worst-case quasi-static diode current could be twice as high for long rise-time pulses than for short rise-times where the TVS does not turn on , and on -chip diode current may be larger at low test voltages than at high test voltages where the TVS does turn on . Adding a small passive impedance between the external TVS and the on -chip diode helps the TVS turn on and reduce the current through the on -chip diode by more than 50%. Similarly, lengthening the trace between the TVS and diode could reduce on -chip diode current by up to a factor of two. |
doi_str_mv | 10.1109/TEMC.2022.3168855 |
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Previously reported SEED models were improved to strengthen their convergence stability and facilitate accurate predictions over a wide range of conditions. These improvements were required to accurately capture the race conditions between the TVS and on -chip diode, where the diode's turn on may prevent turn on of the TVS. Simulations and measurements were performed to demonstrate the impact of the ESD pulse's rise time on race conditions. During a race, results showed the worst-case quasi-static diode current could be twice as high for long rise-time pulses than for short rise-times where the TVS does not turn on , and on -chip diode current may be larger at low test voltages than at high test voltages where the TVS does turn on . Adding a small passive impedance between the external TVS and the on -chip diode helps the TVS turn on and reduce the current through the on -chip diode by more than 50%. Similarly, lengthening the trace between the TVS and diode could reduce on -chip diode current by up to a factor of two.</description><identifier>ISSN: 0018-9375</identifier><identifier>EISSN: 1558-187X</identifier><identifier>DOI: 10.1109/TEMC.2022.3168855</identifier><identifier>CODEN: IEMCAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Current measurement ; Electromagnetic immunity ; electrostatic discharge (ESD) ; Electrostatic discharges ; High speed ; integrated circuit (IC) ; Integrated circuit modeling ; Probes ; Static electricity ; system efficient ESD design (SEED) ; system-level ESD ; System-on-chip ; Transient analysis ; Transient response ; transient-voltage suppression ; Voltage measurement</subject><ispartof>IEEE transactions on electromagnetic compatibility, 2022-08, Vol.64 (4), p.907-914</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Previously reported SEED models were improved to strengthen their convergence stability and facilitate accurate predictions over a wide range of conditions. These improvements were required to accurately capture the race conditions between the TVS and on -chip diode, where the diode's turn on may prevent turn on of the TVS. Simulations and measurements were performed to demonstrate the impact of the ESD pulse's rise time on race conditions. During a race, results showed the worst-case quasi-static diode current could be twice as high for long rise-time pulses than for short rise-times where the TVS does not turn on , and on -chip diode current may be larger at low test voltages than at high test voltages where the TVS does turn on . Adding a small passive impedance between the external TVS and the on -chip diode helps the TVS turn on and reduce the current through the on -chip diode by more than 50%. Similarly, lengthening the trace between the TVS and diode could reduce on -chip diode current by up to a factor of two.</description><subject>Current measurement</subject><subject>Electromagnetic immunity</subject><subject>electrostatic discharge (ESD)</subject><subject>Electrostatic discharges</subject><subject>High speed</subject><subject>integrated circuit (IC)</subject><subject>Integrated circuit modeling</subject><subject>Probes</subject><subject>Static electricity</subject><subject>system efficient ESD design (SEED)</subject><subject>system-level ESD</subject><subject>System-on-chip</subject><subject>Transient analysis</subject><subject>Transient response</subject><subject>transient-voltage suppression</subject><subject>Voltage measurement</subject><issn>0018-9375</issn><issn>1558-187X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kNFKwzAUhoMoOKcPIN4EvO6WkzRNeinbdMPJxE3wLqTtiXZoU5NO8O3t2PDqcOD7_3P4CLkGNgJg-Xgze5qMOON8JCDTWsoTMgApdQJavZ2SAWOgk1woeU4uYtz2ayq5GJDHTbBNrLHp6AvG1jcRqXd0tp7S5-A7LLvaN3SKP3WJkTofqKXz-v0jWbeIFV2MV3TRdBicLfGSnDn7GfHqOIfk9X62mcyT5ephMblbJiXPsi5JSwnOigxsXjCOmClRVawQwnFbpFWhi5KrFHpKpLlMrea5qoQWzAIWOhdiSG4PvW3w3zuMndn6XWj6k4YrJiAFlemeggNVBh9jQGfaUH_Z8GuAmb0zs3dm9s7M0VmfuTlkakT853Ol-z-4-ANOamXy</recordid><startdate>20220801</startdate><enddate>20220801</enddate><creator>Zhou, Jianchi</creator><creator>Xu, Yang</creator><creator>Bub, Sergej</creator><creator>Holland, Steffen</creator><creator>Meiguni, Javad Soleiman</creator><creator>Pommerenke, David</creator><creator>Beetner, Daryl G.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Previously reported SEED models were improved to strengthen their convergence stability and facilitate accurate predictions over a wide range of conditions. These improvements were required to accurately capture the race conditions between the TVS and on -chip diode, where the diode's turn on may prevent turn on of the TVS. Simulations and measurements were performed to demonstrate the impact of the ESD pulse's rise time on race conditions. During a race, results showed the worst-case quasi-static diode current could be twice as high for long rise-time pulses than for short rise-times where the TVS does not turn on , and on -chip diode current may be larger at low test voltages than at high test voltages where the TVS does turn on . Adding a small passive impedance between the external TVS and the on -chip diode helps the TVS turn on and reduce the current through the on -chip diode by more than 50%. 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subjects | Current measurement Electromagnetic immunity electrostatic discharge (ESD) Electrostatic discharges High speed integrated circuit (IC) Integrated circuit modeling Probes Static electricity system efficient ESD design (SEED) system-level ESD System-on-chip Transient analysis Transient response transient-voltage suppression Voltage measurement |
title | Transient Response of ESD Protection Devices for a High-Speed I/O Interface |
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