High-gain high-sensitivity AlGaN/GaN ultraviolet photodetector with effective mechanism for photocurrent collection

A high-performance AlGaN/GaN-based ultraviolet photodetector with a field-enhanced mechanism for photocurrent collection is designed and fabricated in this work. In addition to the inherent polarization field, two additional sets of collection fields are formed from a 2DEG layer to a ITO thin film a...

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Veröffentlicht in:	Applied physics letters 2022-08, Vol.121 (6)
Hauptverfasser:	Pu, Yuhan, Liang, Yung C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Applied physics Dark current Gallium nitrides High gain Luminous intensity Photoelectric effect Photoelectric emission Photometers Thin films Ultraviolet detectors Ultraviolet radiation
Online-Zugang:	Volltext
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