High-gain high-sensitivity AlGaN/GaN ultraviolet photodetector with effective mechanism for photocurrent collection
A high-performance AlGaN/GaN-based ultraviolet photodetector with a field-enhanced mechanism for photocurrent collection is designed and fabricated in this work. In addition to the inherent polarization field, two additional sets of collection fields are formed from a 2DEG layer to a ITO thin film a...
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Veröffentlicht in: | Applied physics letters 2022-08, Vol.121 (6) |
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description | A high-performance AlGaN/GaN-based ultraviolet photodetector with a field-enhanced mechanism for photocurrent collection is designed and fabricated in this work. In addition to the inherent polarization field, two additional sets of collection fields are formed from a 2DEG layer to a ITO thin film and from the 2DEG layer to a cathode electrode sinker. The effectiveness in the collection of photogenerated carriers is remarkably enhanced, which leads to a photocurrent of 6.6 mA/mm under the illumination of 365 nm-centered ultraviolet light at an intensity of 1.8 mW/cm2. With an in-built shallow isolation trench, the dark current is suppressed below 40 pA/mm under a device bias of 5.0 V. A photo-to-dark current ratio as high as 1.7 × 108, a record high photo-responsivity over 4.3 × 106 A/W, and a high gain of 1.46 × 107 under 365-nm light are demonstrated by the fabricated prototype, showing great competitiveness in state-of-the-art AlGaN/GaN-based ultraviolet photodetectors. |
doi_str_mv | 10.1063/5.0095835 |
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In addition to the inherent polarization field, two additional sets of collection fields are formed from a 2DEG layer to a ITO thin film and from the 2DEG layer to a cathode electrode sinker. The effectiveness in the collection of photogenerated carriers is remarkably enhanced, which leads to a photocurrent of 6.6 mA/mm under the illumination of 365 nm-centered ultraviolet light at an intensity of 1.8 mW/cm2. With an in-built shallow isolation trench, the dark current is suppressed below 40 pA/mm under a device bias of 5.0 V. A photo-to-dark current ratio as high as 1.7 × 108, a record high photo-responsivity over 4.3 × 106 A/W, and a high gain of 1.46 × 107 under 365-nm light are demonstrated by the fabricated prototype, showing great competitiveness in state-of-the-art AlGaN/GaN-based ultraviolet photodetectors.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0095835</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum gallium nitrides ; Applied physics ; Dark current ; Gallium nitrides ; High gain ; Luminous intensity ; Photoelectric effect ; Photoelectric emission ; Photometers ; Thin films ; Ultraviolet detectors ; Ultraviolet radiation</subject><ispartof>Applied physics letters, 2022-08, Vol.121 (6)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). 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In addition to the inherent polarization field, two additional sets of collection fields are formed from a 2DEG layer to a ITO thin film and from the 2DEG layer to a cathode electrode sinker. The effectiveness in the collection of photogenerated carriers is remarkably enhanced, which leads to a photocurrent of 6.6 mA/mm under the illumination of 365 nm-centered ultraviolet light at an intensity of 1.8 mW/cm2. With an in-built shallow isolation trench, the dark current is suppressed below 40 pA/mm under a device bias of 5.0 V. A photo-to-dark current ratio as high as 1.7 × 108, a record high photo-responsivity over 4.3 × 106 A/W, and a high gain of 1.46 × 107 under 365-nm light are demonstrated by the fabricated prototype, showing great competitiveness in state-of-the-art AlGaN/GaN-based ultraviolet photodetectors.</description><subject>Aluminum gallium nitrides</subject><subject>Applied physics</subject><subject>Dark current</subject><subject>Gallium nitrides</subject><subject>High gain</subject><subject>Luminous intensity</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Photometers</subject><subject>Thin films</subject><subject>Ultraviolet detectors</subject><subject>Ultraviolet radiation</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNqdkF9LwzAUxYMoOKcPfoOATwrd8qdp08cxdBOGvuhzSdNkzeiamaSVfXtTN_Ddh8u9h_vjXO4B4B6jGUYZnbMZQgXjlF2ACUZ5nlCM-SWYIIRokhUMX4Mb73dRMkLpBPi12TbJVpgONuPkVedNMIMJR7hoV-JtHgv2bXBiMLZVAR4aG2ytgpLBOvhtQgOV1lGZQcG9ko3ojN9DHZe_qOydU12A0rbtSNnuFlxp0Xp1d-5T8Pny_LFcJ5v31etysUkkYXlIeC5rnJIcFRXmtZIZEamsuCYZyVJaUFwxLXSR5qTOq5TVjIuMci4zlSqScUKn4OHke3D2q1c-lDvbuy6eLKMrwgTjPI3U44mSznrvlC4PzuyFO5YYlWOmJSvPmUb26cR6aYIYf_kfPFj3B5aHWtMfh42Gfg</recordid><startdate>20220808</startdate><enddate>20220808</enddate><creator>Pu, Yuhan</creator><creator>Liang, Yung C.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2823-9454</orcidid><orcidid>https://orcid.org/0000-0002-5716-0713</orcidid></search><sort><creationdate>20220808</creationdate><title>High-gain high-sensitivity AlGaN/GaN ultraviolet photodetector with effective mechanism for photocurrent collection</title><author>Pu, Yuhan ; Liang, Yung C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-87cd142709b18dec62a4cb8f262643931b5faf9472d7b45d58a6388c6e4e26823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Aluminum gallium nitrides</topic><topic>Applied physics</topic><topic>Dark current</topic><topic>Gallium nitrides</topic><topic>High gain</topic><topic>Luminous intensity</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Photometers</topic><topic>Thin films</topic><topic>Ultraviolet detectors</topic><topic>Ultraviolet radiation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pu, Yuhan</creatorcontrib><creatorcontrib>Liang, Yung C.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pu, Yuhan</au><au>Liang, Yung C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-gain high-sensitivity AlGaN/GaN ultraviolet photodetector with effective mechanism for photocurrent collection</atitle><jtitle>Applied physics letters</jtitle><date>2022-08-08</date><risdate>2022</risdate><volume>121</volume><issue>6</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A high-performance AlGaN/GaN-based ultraviolet photodetector with a field-enhanced mechanism for photocurrent collection is designed and fabricated in this work. In addition to the inherent polarization field, two additional sets of collection fields are formed from a 2DEG layer to a ITO thin film and from the 2DEG layer to a cathode electrode sinker. The effectiveness in the collection of photogenerated carriers is remarkably enhanced, which leads to a photocurrent of 6.6 mA/mm under the illumination of 365 nm-centered ultraviolet light at an intensity of 1.8 mW/cm2. With an in-built shallow isolation trench, the dark current is suppressed below 40 pA/mm under a device bias of 5.0 V. A photo-to-dark current ratio as high as 1.7 × 108, a record high photo-responsivity over 4.3 × 106 A/W, and a high gain of 1.46 × 107 under 365-nm light are demonstrated by the fabricated prototype, showing great competitiveness in state-of-the-art AlGaN/GaN-based ultraviolet photodetectors.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0095835</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-2823-9454</orcidid><orcidid>https://orcid.org/0000-0002-5716-0713</orcidid></addata></record> |
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subjects | Aluminum gallium nitrides Applied physics Dark current Gallium nitrides High gain Luminous intensity Photoelectric effect Photoelectric emission Photometers Thin films Ultraviolet detectors Ultraviolet radiation |
title | High-gain high-sensitivity AlGaN/GaN ultraviolet photodetector with effective mechanism for photocurrent collection |
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