Source Pad Design Tradeoffs for a Power TrenchFET

This paper will demonstrate wirebond pad design considerations for the source pad of a power trenchFET using three levels of metal. There will be a discussion of how the pad design will impact the pad mechanical strength through the bonding process. Both Aluminum-Copper (AlCu) and Damascene Copper p...

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Veröffentlicht in:	IEEE transactions on semiconductor manufacturing 2022-08, Vol.35 (3), p.439-445
Hauptverfasser:	Williams, Brett, Davis, Robert, Cowell, E. William, Yerger, Justin, Greenwood, Bruce, Ruud, Troy
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum bonding forces Bonding strength Copper Current density damascene integration Field effect transistors integrated circuit interconnections Layout Metals monolithic integrated circuits power integrated circuits power MOSFET Resistance stress Three-dimensional displays Tradeoffs
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