Investigation of seeded vertical gradient freeze (VGF) growth of CdZnTe bulk crystals

•Cylindrical CdZnTe seeds were obtained using a CNC drilling system with custom tooling.•Complete seed melting issue was explored using heat shields near seed well region.•Using a previously grown single crystal seed, seeded VGF growth of CdZnTe was conducted.•Seeding and grain evolution of the grow...

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Veröffentlicht in:Journal of crystal growth 2022-04, Vol.584, p.126573, Article 126573
Hauptverfasser: Balbaşı, Özden B., Ünal, Mustafa, Genç, Ayşe Merve, Çelik, Gülçin, Parlak, Mehmet, Turan, Raşit
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container_issue
container_start_page 126573
container_title Journal of crystal growth
container_volume 584
creator Balbaşı, Özden B.
Ünal, Mustafa
Genç, Ayşe Merve
Çelik, Gülçin
Parlak, Mehmet
Turan, Raşit
description •Cylindrical CdZnTe seeds were obtained using a CNC drilling system with custom tooling.•Complete seed melting issue was explored using heat shields near seed well region.•Using a previously grown single crystal seed, seeded VGF growth of CdZnTe was conducted.•Seeding and grain evolution of the grown CdZnTe ingot were investigated. Due to the requirement for superheating above the melting point in the homogenization process of CdZnTe material, complete seed melting remains as a significant problem for the seeded vertical gradient freeze (VGF) growth of CdZnTe. In addition, due to the typical low single crystal yields in VGF growth of CdZnTe, obtaining single crystal seed material with desired geometries could be considered as a challenge. In this study, single crystal CdZnTe seeds of cylindrical geometry with 10 mm diameter and up to 30 mm length were successfully obtained using a Computer Numerical Control (CNC) cutting system. Moreover, to avoid complete seed melting, a novel design of the growth crucible and support system along with radiation shielding around seed region is employed. Temperature profiling and growth experiments were conducted to observe seed melting and seeded crystal growth of CdZnTe. Initial results of a seeded VGF growth using a single crystal CdZnTe seed is reported.
doi_str_mv 10.1016/j.jcrysgro.2022.126573
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Due to the requirement for superheating above the melting point in the homogenization process of CdZnTe material, complete seed melting remains as a significant problem for the seeded vertical gradient freeze (VGF) growth of CdZnTe. In addition, due to the typical low single crystal yields in VGF growth of CdZnTe, obtaining single crystal seed material with desired geometries could be considered as a challenge. In this study, single crystal CdZnTe seeds of cylindrical geometry with 10 mm diameter and up to 30 mm length were successfully obtained using a Computer Numerical Control (CNC) cutting system. Moreover, to avoid complete seed melting, a novel design of the growth crucible and support system along with radiation shielding around seed region is employed. Temperature profiling and growth experiments were conducted to observe seed melting and seeded crystal growth of CdZnTe. 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Due to the requirement for superheating above the melting point in the homogenization process of CdZnTe material, complete seed melting remains as a significant problem for the seeded vertical gradient freeze (VGF) growth of CdZnTe. In addition, due to the typical low single crystal yields in VGF growth of CdZnTe, obtaining single crystal seed material with desired geometries could be considered as a challenge. In this study, single crystal CdZnTe seeds of cylindrical geometry with 10 mm diameter and up to 30 mm length were successfully obtained using a Computer Numerical Control (CNC) cutting system. Moreover, to avoid complete seed melting, a novel design of the growth crucible and support system along with radiation shielding around seed region is employed. Temperature profiling and growth experiments were conducted to observe seed melting and seeded crystal growth of CdZnTe. 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Gradient freeze technique</topic><topic>A2. Growth from melt</topic><topic>A2. Seed crystals</topic><topic>B1. CdZnTe</topic><topic>B2. Semiconducting II-VI materials</topic><topic>B3. Radiation detectors</topic><topic>Cadmium zinc tellurides</topic><topic>Crystal growth</topic><topic>Melting points</topic><topic>Numerical controls</topic><topic>Radiation shielding</topic><topic>Single crystals</topic><topic>Superheating</topic><topic>Support systems</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Balbaşı, Özden B.</creatorcontrib><creatorcontrib>Ünal, Mustafa</creatorcontrib><creatorcontrib>Genç, Ayşe Merve</creatorcontrib><creatorcontrib>Çelik, Gülçin</creatorcontrib><creatorcontrib>Parlak, Mehmet</creatorcontrib><creatorcontrib>Turan, Raşit</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Balbaşı, Özden B.</au><au>Ünal, Mustafa</au><au>Genç, Ayşe Merve</au><au>Çelik, Gülçin</au><au>Parlak, Mehmet</au><au>Turan, Raşit</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of seeded vertical gradient freeze (VGF) growth of CdZnTe bulk crystals</atitle><jtitle>Journal of crystal growth</jtitle><date>2022-04-15</date><risdate>2022</risdate><volume>584</volume><spage>126573</spage><pages>126573-</pages><artnum>126573</artnum><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>•Cylindrical CdZnTe seeds were obtained using a CNC drilling system with custom tooling.•Complete seed melting issue was explored using heat shields near seed well region.•Using a previously grown single crystal seed, seeded VGF growth of CdZnTe was conducted.•Seeding and grain evolution of the grown CdZnTe ingot were investigated. Due to the requirement for superheating above the melting point in the homogenization process of CdZnTe material, complete seed melting remains as a significant problem for the seeded vertical gradient freeze (VGF) growth of CdZnTe. In addition, due to the typical low single crystal yields in VGF growth of CdZnTe, obtaining single crystal seed material with desired geometries could be considered as a challenge. In this study, single crystal CdZnTe seeds of cylindrical geometry with 10 mm diameter and up to 30 mm length were successfully obtained using a Computer Numerical Control (CNC) cutting system. Moreover, to avoid complete seed melting, a novel design of the growth crucible and support system along with radiation shielding around seed region is employed. Temperature profiling and growth experiments were conducted to observe seed melting and seeded crystal growth of CdZnTe. 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subjects A2. Gradient freeze technique
A2. Growth from melt
A2. Seed crystals
B1. CdZnTe
B2. Semiconducting II-VI materials
B3. Radiation detectors
Cadmium zinc tellurides
Crystal growth
Melting points
Numerical controls
Radiation shielding
Single crystals
Superheating
Support systems
title Investigation of seeded vertical gradient freeze (VGF) growth of CdZnTe bulk crystals
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