Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction: A Theoretical Study
A comprehensive physical model is established to understand the device operation and optimization strategy of the ferroelectric tunnel junction (FTJ). This model is capable of simulating write (switching polarity), read [tunnel electroresistance (TER)], and ac transient operations with a good agreem...
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| Veröffentlicht in: | IEEE transactions on electron devices 2022-08, Vol.69 (8), p.4686-4692 |
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| container_end_page | 4692 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 69 |
| creator | Huang, Hsin-Hui Chu, Yueh-Hua Wu, Tzu-Yun Wu, Ming-Hung Wang, I-Ting Hou, Tuo-Hung |
| description | A comprehensive physical model is established to understand the device operation and optimization strategy of the ferroelectric tunnel junction (FTJ). This model is capable of simulating write (switching polarity), read [tunnel electroresistance (TER)], and ac transient operations with a good agreement with experiments. The strategy of optimizing the thickness of the ferroelectric layer and nonpolar interfacial layer is discussed for enlarging TER ratio. We also discussed the possible misinterpretation of the measured TER ratio according to our model. |
| doi_str_mv | 10.1109/TED.2022.3184654 |
| format | Article |
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This model is capable of simulating write (switching polarity), read [tunnel electroresistance (TER)], and ac transient operations with a good agreement with experiments. The strategy of optimizing the thickness of the ferroelectric layer and nonpolar interfacial layer is discussed for enlarging TER ratio. 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This model is capable of simulating write (switching polarity), read [tunnel electroresistance (TER)], and ac transient operations with a good agreement with experiments. The strategy of optimizing the thickness of the ferroelectric layer and nonpolar interfacial layer is discussed for enlarging TER ratio. We also discussed the possible misinterpretation of the measured TER ratio according to our model.</description><subject>Current measurement</subject><subject>Electric potential</subject><subject>Ferroelectric materials</subject><subject>Ferroelectric tunnel junctions (FTJ)</subject><subject>Ferroelectricity</subject><subject>Iron</subject><subject>modelling</subject><subject>Nonvolatile memory</subject><subject>Optimization</subject><subject>Switches</subject><subject>Thickness</subject><subject>Transient current</subject><subject>tunnel electroresistance (TER)</subject><subject>Tunnel junctions</subject><subject>Tunneling</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1Lw0AUxBdRsFbvgpcFz6n7nay3Uls_KCgaz0vcvNCUdLfuJof-925o8TQMzLzH_BC6pWRGKdEP5fJpxghjM04LoaQ4QxMqZZ5pJdQ5mhBCi0zzgl-iqxi3ySoh2AR1HxAaH3aVs4CXbjPqDlyPK1fjMlQutqNbDCGM-glx710E7Bu8ghA8dGD70FpcDs5Bh98GZ_vWu0c8x-UGfIC-tVWHv_qhPlyji6bqItycdIq-V8ty8ZKt359fF_N1ZpmmfSZ_QNZMCiJFDrmSeVFLbgkHnUvaWGA2DQXOeZUm1LngjZVSU9FwVkgGlk_R_fHuPvjfAWJvtn4ILr00TGlJpeBapRQ5pmzwMQZozD60uyocDCVmZGoSUzMyNSemqXJ3rLQA8B_XBUmQKf8DPlVygA</recordid><startdate>20220801</startdate><enddate>20220801</enddate><creator>Huang, Hsin-Hui</creator><creator>Chu, Yueh-Hua</creator><creator>Wu, Tzu-Yun</creator><creator>Wu, Ming-Hung</creator><creator>Wang, I-Ting</creator><creator>Hou, Tuo-Hung</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4686-4692 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_journals_2695154396 |
| source | IEEE Electronic Library (IEL) |
| subjects | Current measurement Electric potential Ferroelectric materials Ferroelectric tunnel junctions (FTJ) Ferroelectricity Iron modelling Nonvolatile memory Optimization Switches Thickness Transient current tunnel electroresistance (TER) Tunnel junctions Tunneling Voltage |
| title | Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction: A Theoretical Study |
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