In situ control of indium incorporation in (AlGa)1−xInxP layers

•Calculation of In incorporation from in situ monitoring data during MOVPE growth.•Direct study of In incorporation dependent on growth parameters.•In incorporation depends linearly on Zn dopant supply at high temperatures.•Zn on growth surface hinders In incorporation which promotes In reevaporatio...

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Veröffentlicht in:	Journal of crystal growth 2022-07, Vol.590, p.126696, Article 126696
Hauptverfasser:	Brückner, Sebastian, Maaßdorf, Andre, Weyers, Markus
Format:	Artikel
Sprache:	eng
Schlagworte:	A1 Characterization A3 Metalorganic vapor phase epitaxy Aluminum gallium indium phosphides B1 Phosphides B2 Semiconducting III-V materials B3 Laser diodes B3 Light emitting diodes Doping Epitaxial growth High temperature Lattice parameters Metalorganic chemical vapor deposition Substrates Vapor phase epitaxy Vapor phases
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