Excellent HZO ferroelectric thin films on flexible PET substrate

The development of flexible memory devices has been attracting more and more interests to advance next-generation lightweight and wearable electronics. Though HfO2-based ferroelectric thin film has shown promising future for the mass-production of low-cost ferroelectric memory, the fabrication of Hf...

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Veröffentlicht in:	Journal of alloys and compounds 2022-10, Vol.919, p.165872, Article 165872
Hauptverfasser:	Liu, Bingwen, Zhang, Yurun, Zhang, Linjing, Yuan, Qiuting, Zhang, Wei, Li, Yubao
Format:	Artikel
Sprache:	eng
Schlagworte:	Electronics Ferroelectric materials Ferroelectric property Ferroelectricity Flexible electronics Hafnium oxide HfO2-based thin film High temperature Memory devices Multilayers PET Polyethylene terephthalate Spalling Substrates Thin films Wearable technology
Online-Zugang:	Volltext
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