TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA) FET technology using Si nanowire channels with a diameter of 8 nm. n- and p-FETs are irradiated up to 300 Mrad(SiO 2 ) and annealed at room temperature. TID effects are negligible up to 10 Mrad(SiO 2 ). At ul...

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Veröffentlicht in:	IEEE transactions on nuclear science 2022-07, Vol.69 (7), p.1444-1452
Hauptverfasser:	Bonaldo, Stefano, Gorchichko, Mariia, Zhang, En Xia, Ma, Teng, Mattiazzo, Serena, Bagatin, Marta, Paccagnella, Alessandro, Gerardin, Simone, Schrimpf, Ronald D., Reed, Robert A., Linten, Dimitri, Mitard, Jerome, Fleetwood, Daniel M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Bias Bias dependence charge trapping DC static characteristics Degradation Field effect transistors Gallium arsenide gate-all-around (GAA) Irradiation Leakage current LF noise Logic gates low frequency noise Nanotechnology Nanowires Radiation effects Recombination Room temperature Silicon Silicon dioxide Threshold voltage total ionizing dose Transconductance Traps Ultrahigh temperature
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