TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses
Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA) FET technology using Si nanowire channels with a diameter of 8 nm. n- and p-FETs are irradiated up to 300 Mrad(SiO 2 ) and annealed at room temperature. TID effects are negligible up to 10 Mrad(SiO 2 ). At ul...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2022-07, Vol.69 (7), p.1444-1452 |
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| creator | Bonaldo, Stefano Gorchichko, Mariia Zhang, En Xia Ma, Teng Mattiazzo, Serena Bagatin, Marta Paccagnella, Alessandro Gerardin, Simone Schrimpf, Ronald D. Reed, Robert A. Linten, Dimitri Mitard, Jerome Fleetwood, Daniel M. |
| description | Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA) FET technology using Si nanowire channels with a diameter of 8 nm. n- and p-FETs are irradiated up to 300 Mrad(SiO 2 ) and annealed at room temperature. TID effects are negligible up to 10 Mrad(SiO 2 ). At ultrahigh doses, the TID degradation depends on the irradiation bias condition, with more severe effects observed in longer channel devices. The worst case irradiation condition is when positive bias is applied to the gate. Threshold-voltage shifts are caused by H + -driven generation of interface traps at the oxide/channel interface. In contrast, FETs irradiated under negative gate bias are dominated by transconductance loss and increases of low-frequency noise, suggesting the activation of border traps. Enhanced off-leakage current is observed in n-FETs due to charge trapping in shallow-trench isolation, and in p-FETs due to trap-assisted recombination at STI sidewalls and/or spacer dielectrics at drain/bulk junctions. |
| doi_str_mv | 10.1109/TNS.2022.3142385 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_2689806034</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9681060</ieee_id><sourcerecordid>2689806034</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-25c3ffa1ffa9aee44cbee0553d4bad52a71b37742cd67ea09210227b9a9828523</originalsourceid><addsrcrecordid>eNo9kMFrwjAUxsPYYM7tPtglsHNdkiZtchR1Kjg9tJ5D2r5qpWtcUhn-94soOzweD77ve3w_hF4pGVFK1Ee-zkaMMDaKKWexFHdoQIWQERWpvEcDQqiMFFfqET15fwgnF0QM0C5fTvGsrqHsPW46vGh2-_aMs9K0UOG56SEat200dvbUVThr8Np09rdxgCdfmwznznS-8b11Hi-dM1UTHBXuLd62vTP7kIan1oN_Rg-1aT283PYQbT9n-WQRrTbz5WS8ikqmaB8xUcZ1bWgYZQA4LwsAIkRc8cJUgpmUFnGaclZWSQqGKEZD57RQRkkmBYuH6P2ae3T25wS-1wd7cl14qVkilSQJiXlQkauqdNZ7B7U-uubbuLOmRF9w6oBTX3DqG85gebtaGgD4l6tE0kvkHz-4cAU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2689806034</pqid></control><display><type>article</type><title>TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses</title><source>IEEE Electronic Library (IEL)</source><creator>Bonaldo, Stefano ; Gorchichko, Mariia ; Zhang, En Xia ; Ma, Teng ; Mattiazzo, Serena ; Bagatin, Marta ; Paccagnella, Alessandro ; Gerardin, Simone ; Schrimpf, Ronald D. ; Reed, Robert A. ; Linten, Dimitri ; Mitard, Jerome ; Fleetwood, Daniel M.</creator><creatorcontrib>Bonaldo, Stefano ; Gorchichko, Mariia ; Zhang, En Xia ; Ma, Teng ; Mattiazzo, Serena ; Bagatin, Marta ; Paccagnella, Alessandro ; Gerardin, Simone ; Schrimpf, Ronald D. ; Reed, Robert A. ; Linten, Dimitri ; Mitard, Jerome ; Fleetwood, Daniel M.</creatorcontrib><description>Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA) FET technology using Si nanowire channels with a diameter of 8 nm. n- and p-FETs are irradiated up to 300 Mrad(SiO 2 ) and annealed at room temperature. TID effects are negligible up to 10 Mrad(SiO 2 ). At ultrahigh doses, the TID degradation depends on the irradiation bias condition, with more severe effects observed in longer channel devices. The worst case irradiation condition is when positive bias is applied to the gate. Threshold-voltage shifts are caused by H + -driven generation of interface traps at the oxide/channel interface. In contrast, FETs irradiated under negative gate bias are dominated by transconductance loss and increases of low-frequency noise, suggesting the activation of border traps. Enhanced off-leakage current is observed in n-FETs due to charge trapping in shallow-trench isolation, and in p-FETs due to trap-assisted recombination at STI sidewalls and/or spacer dielectrics at drain/bulk junctions.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2022.3142385</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Annealing ; Bias ; Bias dependence ; charge trapping ; DC static characteristics ; Degradation ; Field effect transistors ; Gallium arsenide ; gate-all-around (GAA) ; Irradiation ; Leakage current ; LF noise ; Logic gates ; low frequency noise ; Nanotechnology ; Nanowires ; Radiation effects ; Recombination ; Room temperature ; Silicon ; Silicon dioxide ; Threshold voltage ; total ionizing dose ; Transconductance ; Traps ; Ultrahigh temperature</subject><ispartof>IEEE transactions on nuclear science, 2022-07, Vol.69 (7), p.1444-1452</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-25c3ffa1ffa9aee44cbee0553d4bad52a71b37742cd67ea09210227b9a9828523</citedby><cites>FETCH-LOGICAL-c291t-25c3ffa1ffa9aee44cbee0553d4bad52a71b37742cd67ea09210227b9a9828523</cites><orcidid>0000-0003-0712-5036 ; 0000-0002-8021-2411 ; 0000-0001-9303-9980 ; 0000-0001-8255-3474 ; 0000-0002-6727-5493 ; 0000-0003-2779-3461 ; 0000-0001-7419-2701 ; 0000-0003-4257-7142 ; 0000-0002-1260-0586</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9681060$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9681060$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Bonaldo, Stefano</creatorcontrib><creatorcontrib>Gorchichko, Mariia</creatorcontrib><creatorcontrib>Zhang, En Xia</creatorcontrib><creatorcontrib>Ma, Teng</creatorcontrib><creatorcontrib>Mattiazzo, Serena</creatorcontrib><creatorcontrib>Bagatin, Marta</creatorcontrib><creatorcontrib>Paccagnella, Alessandro</creatorcontrib><creatorcontrib>Gerardin, Simone</creatorcontrib><creatorcontrib>Schrimpf, Ronald D.</creatorcontrib><creatorcontrib>Reed, Robert A.</creatorcontrib><creatorcontrib>Linten, Dimitri</creatorcontrib><creatorcontrib>Mitard, Jerome</creatorcontrib><creatorcontrib>Fleetwood, Daniel M.</creatorcontrib><title>TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA) FET technology using Si nanowire channels with a diameter of 8 nm. n- and p-FETs are irradiated up to 300 Mrad(SiO 2 ) and annealed at room temperature. TID effects are negligible up to 10 Mrad(SiO 2 ). At ultrahigh doses, the TID degradation depends on the irradiation bias condition, with more severe effects observed in longer channel devices. The worst case irradiation condition is when positive bias is applied to the gate. Threshold-voltage shifts are caused by H + -driven generation of interface traps at the oxide/channel interface. In contrast, FETs irradiated under negative gate bias are dominated by transconductance loss and increases of low-frequency noise, suggesting the activation of border traps. Enhanced off-leakage current is observed in n-FETs due to charge trapping in shallow-trench isolation, and in p-FETs due to trap-assisted recombination at STI sidewalls and/or spacer dielectrics at drain/bulk junctions.</description><subject>Annealing</subject><subject>Bias</subject><subject>Bias dependence</subject><subject>charge trapping</subject><subject>DC static characteristics</subject><subject>Degradation</subject><subject>Field effect transistors</subject><subject>Gallium arsenide</subject><subject>gate-all-around (GAA)</subject><subject>Irradiation</subject><subject>Leakage current</subject><subject>LF noise</subject><subject>Logic gates</subject><subject>low frequency noise</subject><subject>Nanotechnology</subject><subject>Nanowires</subject><subject>Radiation effects</subject><subject>Recombination</subject><subject>Room temperature</subject><subject>Silicon</subject><subject>Silicon dioxide</subject><subject>Threshold voltage</subject><subject>total ionizing dose</subject><subject>Transconductance</subject><subject>Traps</subject><subject>Ultrahigh temperature</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMFrwjAUxsPYYM7tPtglsHNdkiZtchR1Kjg9tJ5D2r5qpWtcUhn-94soOzweD77ve3w_hF4pGVFK1Ee-zkaMMDaKKWexFHdoQIWQERWpvEcDQqiMFFfqET15fwgnF0QM0C5fTvGsrqHsPW46vGh2-_aMs9K0UOG56SEat200dvbUVThr8Np09rdxgCdfmwznznS-8b11Hi-dM1UTHBXuLd62vTP7kIan1oN_Rg-1aT283PYQbT9n-WQRrTbz5WS8ikqmaB8xUcZ1bWgYZQA4LwsAIkRc8cJUgpmUFnGaclZWSQqGKEZD57RQRkkmBYuH6P2ae3T25wS-1wd7cl14qVkilSQJiXlQkauqdNZ7B7U-uubbuLOmRF9w6oBTX3DqG85gebtaGgD4l6tE0kvkHz-4cAU</recordid><startdate>20220701</startdate><enddate>20220701</enddate><creator>Bonaldo, Stefano</creator><creator>Gorchichko, Mariia</creator><creator>Zhang, En Xia</creator><creator>Ma, Teng</creator><creator>Mattiazzo, Serena</creator><creator>Bagatin, Marta</creator><creator>Paccagnella, Alessandro</creator><creator>Gerardin, Simone</creator><creator>Schrimpf, Ronald D.</creator><creator>Reed, Robert A.</creator><creator>Linten, Dimitri</creator><creator>Mitard, Jerome</creator><creator>Fleetwood, Daniel M.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope><orcidid>https://orcid.org/0000-0003-0712-5036</orcidid><orcidid>https://orcid.org/0000-0002-8021-2411</orcidid><orcidid>https://orcid.org/0000-0001-9303-9980</orcidid><orcidid>https://orcid.org/0000-0001-8255-3474</orcidid><orcidid>https://orcid.org/0000-0002-6727-5493</orcidid><orcidid>https://orcid.org/0000-0003-2779-3461</orcidid><orcidid>https://orcid.org/0000-0001-7419-2701</orcidid><orcidid>https://orcid.org/0000-0003-4257-7142</orcidid><orcidid>https://orcid.org/0000-0002-1260-0586</orcidid></search><sort><creationdate>20220701</creationdate><title>TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses</title><author>Bonaldo, Stefano ; Gorchichko, Mariia ; Zhang, En Xia ; Ma, Teng ; Mattiazzo, Serena ; Bagatin, Marta ; Paccagnella, Alessandro ; Gerardin, Simone ; Schrimpf, Ronald D. ; Reed, Robert A. ; Linten, Dimitri ; Mitard, Jerome ; Fleetwood, Daniel M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-25c3ffa1ffa9aee44cbee0553d4bad52a71b37742cd67ea09210227b9a9828523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Annealing</topic><topic>Bias</topic><topic>Bias dependence</topic><topic>charge trapping</topic><topic>DC static characteristics</topic><topic>Degradation</topic><topic>Field effect transistors</topic><topic>Gallium arsenide</topic><topic>gate-all-around (GAA)</topic><topic>Irradiation</topic><topic>Leakage current</topic><topic>LF noise</topic><topic>Logic gates</topic><topic>low frequency noise</topic><topic>Nanotechnology</topic><topic>Nanowires</topic><topic>Radiation effects</topic><topic>Recombination</topic><topic>Room temperature</topic><topic>Silicon</topic><topic>Silicon dioxide</topic><topic>Threshold voltage</topic><topic>total ionizing dose</topic><topic>Transconductance</topic><topic>Traps</topic><topic>Ultrahigh temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bonaldo, Stefano</creatorcontrib><creatorcontrib>Gorchichko, Mariia</creatorcontrib><creatorcontrib>Zhang, En Xia</creatorcontrib><creatorcontrib>Ma, Teng</creatorcontrib><creatorcontrib>Mattiazzo, Serena</creatorcontrib><creatorcontrib>Bagatin, Marta</creatorcontrib><creatorcontrib>Paccagnella, Alessandro</creatorcontrib><creatorcontrib>Gerardin, Simone</creatorcontrib><creatorcontrib>Schrimpf, Ronald D.</creatorcontrib><creatorcontrib>Reed, Robert A.</creatorcontrib><creatorcontrib>Linten, Dimitri</creatorcontrib><creatorcontrib>Mitard, Jerome</creatorcontrib><creatorcontrib>Fleetwood, Daniel M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bonaldo, Stefano</au><au>Gorchichko, Mariia</au><au>Zhang, En Xia</au><au>Ma, Teng</au><au>Mattiazzo, Serena</au><au>Bagatin, Marta</au><au>Paccagnella, Alessandro</au><au>Gerardin, Simone</au><au>Schrimpf, Ronald D.</au><au>Reed, Robert A.</au><au>Linten, Dimitri</au><au>Mitard, Jerome</au><au>Fleetwood, Daniel M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2022-07-01</date><risdate>2022</risdate><volume>69</volume><issue>7</issue><spage>1444</spage><epage>1452</epage><pages>1444-1452</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA) FET technology using Si nanowire channels with a diameter of 8 nm. n- and p-FETs are irradiated up to 300 Mrad(SiO 2 ) and annealed at room temperature. TID effects are negligible up to 10 Mrad(SiO 2 ). At ultrahigh doses, the TID degradation depends on the irradiation bias condition, with more severe effects observed in longer channel devices. The worst case irradiation condition is when positive bias is applied to the gate. Threshold-voltage shifts are caused by H + -driven generation of interface traps at the oxide/channel interface. In contrast, FETs irradiated under negative gate bias are dominated by transconductance loss and increases of low-frequency noise, suggesting the activation of border traps. Enhanced off-leakage current is observed in n-FETs due to charge trapping in shallow-trench isolation, and in p-FETs due to trap-assisted recombination at STI sidewalls and/or spacer dielectrics at drain/bulk junctions.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2022.3142385</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0003-0712-5036</orcidid><orcidid>https://orcid.org/0000-0002-8021-2411</orcidid><orcidid>https://orcid.org/0000-0001-9303-9980</orcidid><orcidid>https://orcid.org/0000-0001-8255-3474</orcidid><orcidid>https://orcid.org/0000-0002-6727-5493</orcidid><orcidid>https://orcid.org/0000-0003-2779-3461</orcidid><orcidid>https://orcid.org/0000-0001-7419-2701</orcidid><orcidid>https://orcid.org/0000-0003-4257-7142</orcidid><orcidid>https://orcid.org/0000-0002-1260-0586</orcidid></addata></record> |
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| subjects | Annealing Bias Bias dependence charge trapping DC static characteristics Degradation Field effect transistors Gallium arsenide gate-all-around (GAA) Irradiation Leakage current LF noise Logic gates low frequency noise Nanotechnology Nanowires Radiation effects Recombination Room temperature Silicon Silicon dioxide Threshold voltage total ionizing dose Transconductance Traps Ultrahigh temperature |
| title | TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T18%3A06%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=TID%20Effects%20in%20Highly%20Scaled%20Gate-All-Around%20Si%20Nanowire%20CMOS%20Transistors%20Irradiated%20to%20Ultrahigh%20Doses&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Bonaldo,%20Stefano&rft.date=2022-07-01&rft.volume=69&rft.issue=7&rft.spage=1444&rft.epage=1452&rft.pages=1444-1452&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.2022.3142385&rft_dat=%3Cproquest_RIE%3E2689806034%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2689806034&rft_id=info:pmid/&rft_ieee_id=9681060&rfr_iscdi=true |