Optimization of AlGaInAs quantum well in semiconductor lasers
In this paper, a diode laser design method based on optimization of the thickness and material composition of the quantum well (QW) in order to achieve the minimum current threshold and maximum output optical power is introduced. In the proposed structure, an asymmetric waveguide structure was used...
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| Veröffentlicht in: | Optical and quantum electronics 2022-08, Vol.54 (8), Article 517 |
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| creator | Abbasi, Seyed Peyman Goodarzi, Mitra Mahdieh, Mohammad Hossein |
| description | In this paper, a diode laser design method based on optimization of the thickness and material composition of the quantum well (QW) in order to achieve the minimum current threshold and maximum output optical power is introduced. In the proposed structure, an asymmetric waveguide structure was used to control the confinement factor and decrease free carrier loss. The laser design, operating at 808 nm, was optimized by using a 10 nm Al
0.126
Ga
0.774
In
0.1
As for the QW and a 900 nm Al
0.4
Ga
0.6
As for the waveguide (WG). The experimental results show that the optical power can be enhanced effectively with the proposed structure. The experimental results also show the slope efficiency in 1 mm cavity length is improved sufficiently to a value of 1.36 W/A. Furthermore, the present QW structure provides internal quantum efficiency and internal loss of 0.93 and 0.38 cm
−1
, respectively. |
| doi_str_mv | 10.1007/s11082-022-03914-2 |
| format | Article |
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0.126
Ga
0.774
In
0.1
As for the QW and a 900 nm Al
0.4
Ga
0.6
As for the waveguide (WG). The experimental results show that the optical power can be enhanced effectively with the proposed structure. The experimental results also show the slope efficiency in 1 mm cavity length is improved sufficiently to a value of 1.36 W/A. Furthermore, the present QW structure provides internal quantum efficiency and internal loss of 0.93 and 0.38 cm
−1
, respectively.</description><identifier>ISSN: 0306-8919</identifier><identifier>EISSN: 1572-817X</identifier><identifier>DOI: 10.1007/s11082-022-03914-2</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Computer Communication Networks ; Design optimization ; Electrical Engineering ; Lasers ; Optical Devices ; Optics ; Photonics ; Physics ; Physics and Astronomy ; Quantum efficiency ; Quantum wells ; Semiconductor lasers ; Waveguides</subject><ispartof>Optical and quantum electronics, 2022-08, Vol.54 (8), Article 517</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022</rights><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-8fe7fb758bdd6c7535ebb8d220538e56ecbecef3db0db599cfcd27fe6025f7163</citedby><cites>FETCH-LOGICAL-c319t-8fe7fb758bdd6c7535ebb8d220538e56ecbecef3db0db599cfcd27fe6025f7163</cites><orcidid>0000-0003-0345-2259</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11082-022-03914-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11082-022-03914-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27922,27923,41486,42555,51317</link.rule.ids></links><search><creatorcontrib>Abbasi, Seyed Peyman</creatorcontrib><creatorcontrib>Goodarzi, Mitra</creatorcontrib><creatorcontrib>Mahdieh, Mohammad Hossein</creatorcontrib><title>Optimization of AlGaInAs quantum well in semiconductor lasers</title><title>Optical and quantum electronics</title><addtitle>Opt Quant Electron</addtitle><description>In this paper, a diode laser design method based on optimization of the thickness and material composition of the quantum well (QW) in order to achieve the minimum current threshold and maximum output optical power is introduced. In the proposed structure, an asymmetric waveguide structure was used to control the confinement factor and decrease free carrier loss. The laser design, operating at 808 nm, was optimized by using a 10 nm Al
0.126
Ga
0.774
In
0.1
As for the QW and a 900 nm Al
0.4
Ga
0.6
As for the waveguide (WG). The experimental results show that the optical power can be enhanced effectively with the proposed structure. The experimental results also show the slope efficiency in 1 mm cavity length is improved sufficiently to a value of 1.36 W/A. Furthermore, the present QW structure provides internal quantum efficiency and internal loss of 0.93 and 0.38 cm
−1
, respectively.</description><subject>Characterization and Evaluation of Materials</subject><subject>Computer Communication Networks</subject><subject>Design optimization</subject><subject>Electrical Engineering</subject><subject>Lasers</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum efficiency</subject><subject>Quantum wells</subject><subject>Semiconductor lasers</subject><subject>Waveguides</subject><issn>0306-8919</issn><issn>1572-817X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKt_wNOC59VJ0nwdPJSitVDoRcFb2M2HbNndtMkuor_e6ArePAxzeZ93mAehawy3GEDcJYxBkhJIHqrwoiQnaIaZIKXE4vUUzYACL6XC6hxdpLQHAL5gMEP3u8PQdM1nNTShL4Ivlu262vTLVBzHqh_Grnh3bVs0fZFc15jQ29EMIRZtlVxMl-jMV21yV797jl4eH55XT-V2t96sltvSUKyGUnonfC2YrK3lRjDKXF1LSwgwKh3jztTOOE9tDbZmShlvLBHecSDMC8zpHN1MvYcYjqNLg96HMfb5pCY8f8UWSkBOkSllYkgpOq8Psemq-KEx6G9NetKksyb9o0mTDNEJSjncv7n4V_0P9QWRZmtz</recordid><startdate>20220801</startdate><enddate>20220801</enddate><creator>Abbasi, Seyed Peyman</creator><creator>Goodarzi, Mitra</creator><creator>Mahdieh, Mohammad Hossein</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-0345-2259</orcidid></search><sort><creationdate>20220801</creationdate><title>Optimization of AlGaInAs quantum well in semiconductor lasers</title><author>Abbasi, Seyed Peyman ; Goodarzi, Mitra ; Mahdieh, Mohammad Hossein</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-8fe7fb758bdd6c7535ebb8d220538e56ecbecef3db0db599cfcd27fe6025f7163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Computer Communication Networks</topic><topic>Design optimization</topic><topic>Electrical Engineering</topic><topic>Lasers</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum efficiency</topic><topic>Quantum wells</topic><topic>Semiconductor lasers</topic><topic>Waveguides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Abbasi, Seyed Peyman</creatorcontrib><creatorcontrib>Goodarzi, Mitra</creatorcontrib><creatorcontrib>Mahdieh, Mohammad Hossein</creatorcontrib><collection>CrossRef</collection><jtitle>Optical and quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Abbasi, Seyed Peyman</au><au>Goodarzi, Mitra</au><au>Mahdieh, Mohammad Hossein</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optimization of AlGaInAs quantum well in semiconductor lasers</atitle><jtitle>Optical and quantum electronics</jtitle><stitle>Opt Quant Electron</stitle><date>2022-08-01</date><risdate>2022</risdate><volume>54</volume><issue>8</issue><artnum>517</artnum><issn>0306-8919</issn><eissn>1572-817X</eissn><abstract>In this paper, a diode laser design method based on optimization of the thickness and material composition of the quantum well (QW) in order to achieve the minimum current threshold and maximum output optical power is introduced. In the proposed structure, an asymmetric waveguide structure was used to control the confinement factor and decrease free carrier loss. The laser design, operating at 808 nm, was optimized by using a 10 nm Al
0.126
Ga
0.774
In
0.1
As for the QW and a 900 nm Al
0.4
Ga
0.6
As for the waveguide (WG). The experimental results show that the optical power can be enhanced effectively with the proposed structure. The experimental results also show the slope efficiency in 1 mm cavity length is improved sufficiently to a value of 1.36 W/A. Furthermore, the present QW structure provides internal quantum efficiency and internal loss of 0.93 and 0.38 cm
−1
, respectively.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11082-022-03914-2</doi><orcidid>https://orcid.org/0000-0003-0345-2259</orcidid></addata></record> |
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| language | eng |
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| subjects | Characterization and Evaluation of Materials Computer Communication Networks Design optimization Electrical Engineering Lasers Optical Devices Optics Photonics Physics Physics and Astronomy Quantum efficiency Quantum wells Semiconductor lasers Waveguides |
| title | Optimization of AlGaInAs quantum well in semiconductor lasers |
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