Spectroscopic imaging ellipsometry of two-dimensional TMDC heterostructures

Semiconducting two-dimensional materials and their heterostructures gained a lot of interest for applications as well as fundamental studies due to their rich optical properties. Assembly in van der Waals heterostacks can significantly alter the intrinsic optical properties as well as the wavelength...

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Veröffentlicht in:arXiv.org 2022-07
Hauptverfasser: Sigger, Florian, Lambers, Hendrik, Nisi Katharina, Klein, Julian, Saigal, Nihit, Holleitner, Alexander W, Wurstbauer, Ursula
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Holleitner, Alexander W
Wurstbauer, Ursula
description Semiconducting two-dimensional materials and their heterostructures gained a lot of interest for applications as well as fundamental studies due to their rich optical properties. Assembly in van der Waals heterostacks can significantly alter the intrinsic optical properties as well as the wavelength-dependent absorption and emission efficiencies making a direct comparison of e.g. photoluminescence intensities difficult. Here, we determine the dielectric function for the prototypical MoSe2/WSe2 heterobilayer and their individual layers. Apart from a redshift of 18 meV - 44 meV of the energetically lowest interband transitions, we find that for larger energies the dielectric function can only be described by treating the van der Waals heterobilayer as a new artificial homobilayer crystal rather than a stack of individual layers. The determined dielectric functions are applied to calculate the Michelson contrast of the individual layers and the bilayer in dependence of the oxide thickness of often used Si/SiO2 substrates. Our results highlight the need to consider the altered dielectric functions impacting the Michelson interference in the interpretation of intensities in optical measurements such as Raman scattering or photoluminescence.
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_2688296320</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2688296320</sourcerecordid><originalsourceid>FETCH-proquest_journals_26882963203</originalsourceid><addsrcrecordid>eNqNy7EKwjAUQNEgCBbtPwScCzGxtc5VEcTJ7lLia01J-2Jegvj3dvADnO5yz4wlUqlNVm6lXLCUqBdCyGIn81wl7HJzoINH0uiM5mZoOjN2HKw1jnCA4D8cWx7emD3MACMZHBvL6-uh4k8IMMngow7RA63YvG0sQfrrkq1Px7o6Z87jKwKFe4_RT5zusihLuS-UFOq_6wumJz5U</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2688296320</pqid></control><display><type>article</type><title>Spectroscopic imaging ellipsometry of two-dimensional TMDC heterostructures</title><source>Free E- Journals</source><creator>Sigger, Florian ; Lambers, Hendrik ; Nisi Katharina ; Klein, Julian ; Saigal, Nihit ; Holleitner, Alexander W ; Wurstbauer, Ursula</creator><creatorcontrib>Sigger, Florian ; Lambers, Hendrik ; Nisi Katharina ; Klein, Julian ; Saigal, Nihit ; Holleitner, Alexander W ; Wurstbauer, Ursula</creatorcontrib><description>Semiconducting two-dimensional materials and their heterostructures gained a lot of interest for applications as well as fundamental studies due to their rich optical properties. Assembly in van der Waals heterostacks can significantly alter the intrinsic optical properties as well as the wavelength-dependent absorption and emission efficiencies making a direct comparison of e.g. photoluminescence intensities difficult. Here, we determine the dielectric function for the prototypical MoSe2/WSe2 heterobilayer and their individual layers. Apart from a redshift of 18 meV - 44 meV of the energetically lowest interband transitions, we find that for larger energies the dielectric function can only be described by treating the van der Waals heterobilayer as a new artificial homobilayer crystal rather than a stack of individual layers. The determined dielectric functions are applied to calculate the Michelson contrast of the individual layers and the bilayer in dependence of the oxide thickness of often used Si/SiO2 substrates. Our results highlight the need to consider the altered dielectric functions impacting the Michelson interference in the interpretation of intensities in optical measurements such as Raman scattering or photoluminescence.</description><identifier>EISSN: 2331-8422</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Bilayers ; Dielectrics ; Ellipsometry ; Heterostructures ; Optical measurement ; Optical properties ; Photoluminescence ; Raman spectra ; Red shift ; Silicon dioxide ; Silicon substrates ; Two dimensional materials</subject><ispartof>arXiv.org, 2022-07</ispartof><rights>2022. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>781,785</link.rule.ids></links><search><creatorcontrib>Sigger, Florian</creatorcontrib><creatorcontrib>Lambers, Hendrik</creatorcontrib><creatorcontrib>Nisi Katharina</creatorcontrib><creatorcontrib>Klein, Julian</creatorcontrib><creatorcontrib>Saigal, Nihit</creatorcontrib><creatorcontrib>Holleitner, Alexander W</creatorcontrib><creatorcontrib>Wurstbauer, Ursula</creatorcontrib><title>Spectroscopic imaging ellipsometry of two-dimensional TMDC heterostructures</title><title>arXiv.org</title><description>Semiconducting two-dimensional materials and their heterostructures gained a lot of interest for applications as well as fundamental studies due to their rich optical properties. Assembly in van der Waals heterostacks can significantly alter the intrinsic optical properties as well as the wavelength-dependent absorption and emission efficiencies making a direct comparison of e.g. photoluminescence intensities difficult. Here, we determine the dielectric function for the prototypical MoSe2/WSe2 heterobilayer and their individual layers. Apart from a redshift of 18 meV - 44 meV of the energetically lowest interband transitions, we find that for larger energies the dielectric function can only be described by treating the van der Waals heterobilayer as a new artificial homobilayer crystal rather than a stack of individual layers. The determined dielectric functions are applied to calculate the Michelson contrast of the individual layers and the bilayer in dependence of the oxide thickness of often used Si/SiO2 substrates. Our results highlight the need to consider the altered dielectric functions impacting the Michelson interference in the interpretation of intensities in optical measurements such as Raman scattering or photoluminescence.</description><subject>Bilayers</subject><subject>Dielectrics</subject><subject>Ellipsometry</subject><subject>Heterostructures</subject><subject>Optical measurement</subject><subject>Optical properties</subject><subject>Photoluminescence</subject><subject>Raman spectra</subject><subject>Red shift</subject><subject>Silicon dioxide</subject><subject>Silicon substrates</subject><subject>Two dimensional materials</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqNy7EKwjAUQNEgCBbtPwScCzGxtc5VEcTJ7lLia01J-2Jegvj3dvADnO5yz4wlUqlNVm6lXLCUqBdCyGIn81wl7HJzoINH0uiM5mZoOjN2HKw1jnCA4D8cWx7emD3MACMZHBvL6-uh4k8IMMngow7RA63YvG0sQfrrkq1Px7o6Z87jKwKFe4_RT5zusihLuS-UFOq_6wumJz5U</recordid><startdate>20220711</startdate><enddate>20220711</enddate><creator>Sigger, Florian</creator><creator>Lambers, Hendrik</creator><creator>Nisi Katharina</creator><creator>Klein, Julian</creator><creator>Saigal, Nihit</creator><creator>Holleitner, Alexander W</creator><creator>Wurstbauer, Ursula</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope></search><sort><creationdate>20220711</creationdate><title>Spectroscopic imaging ellipsometry of two-dimensional TMDC heterostructures</title><author>Sigger, Florian ; Lambers, Hendrik ; Nisi Katharina ; Klein, Julian ; Saigal, Nihit ; Holleitner, Alexander W ; Wurstbauer, Ursula</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_26882963203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Bilayers</topic><topic>Dielectrics</topic><topic>Ellipsometry</topic><topic>Heterostructures</topic><topic>Optical measurement</topic><topic>Optical properties</topic><topic>Photoluminescence</topic><topic>Raman spectra</topic><topic>Red shift</topic><topic>Silicon dioxide</topic><topic>Silicon substrates</topic><topic>Two dimensional materials</topic><toplevel>online_resources</toplevel><creatorcontrib>Sigger, Florian</creatorcontrib><creatorcontrib>Lambers, Hendrik</creatorcontrib><creatorcontrib>Nisi Katharina</creatorcontrib><creatorcontrib>Klein, Julian</creatorcontrib><creatorcontrib>Saigal, Nihit</creatorcontrib><creatorcontrib>Holleitner, Alexander W</creatorcontrib><creatorcontrib>Wurstbauer, Ursula</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Access via ProQuest (Open Access)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sigger, Florian</au><au>Lambers, Hendrik</au><au>Nisi Katharina</au><au>Klein, Julian</au><au>Saigal, Nihit</au><au>Holleitner, Alexander W</au><au>Wurstbauer, Ursula</au><format>book</format><genre>document</genre><ristype>GEN</ristype><atitle>Spectroscopic imaging ellipsometry of two-dimensional TMDC heterostructures</atitle><jtitle>arXiv.org</jtitle><date>2022-07-11</date><risdate>2022</risdate><eissn>2331-8422</eissn><abstract>Semiconducting two-dimensional materials and their heterostructures gained a lot of interest for applications as well as fundamental studies due to their rich optical properties. Assembly in van der Waals heterostacks can significantly alter the intrinsic optical properties as well as the wavelength-dependent absorption and emission efficiencies making a direct comparison of e.g. photoluminescence intensities difficult. Here, we determine the dielectric function for the prototypical MoSe2/WSe2 heterobilayer and their individual layers. Apart from a redshift of 18 meV - 44 meV of the energetically lowest interband transitions, we find that for larger energies the dielectric function can only be described by treating the van der Waals heterobilayer as a new artificial homobilayer crystal rather than a stack of individual layers. The determined dielectric functions are applied to calculate the Michelson contrast of the individual layers and the bilayer in dependence of the oxide thickness of often used Si/SiO2 substrates. Our results highlight the need to consider the altered dielectric functions impacting the Michelson interference in the interpretation of intensities in optical measurements such as Raman scattering or photoluminescence.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><oa>free_for_read</oa></addata></record>
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subjects Bilayers
Dielectrics
Ellipsometry
Heterostructures
Optical measurement
Optical properties
Photoluminescence
Raman spectra
Red shift
Silicon dioxide
Silicon substrates
Two dimensional materials
title Spectroscopic imaging ellipsometry of two-dimensional TMDC heterostructures
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-11T23%3A13%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=document&rft.atitle=Spectroscopic%20imaging%20ellipsometry%20of%20two-dimensional%20TMDC%20heterostructures&rft.jtitle=arXiv.org&rft.au=Sigger,%20Florian&rft.date=2022-07-11&rft.eissn=2331-8422&rft_id=info:doi/&rft_dat=%3Cproquest%3E2688296320%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2688296320&rft_id=info:pmid/&rfr_iscdi=true