Structural, thermal, elastic, and magnetoelectronic properties of FeNiMnZ (Z = Al, Si) quaternary Heuslers under hydrostatic pressure

In this work, we have studied the structural, thermal, elastic and magnetoelectronic properties of FeNiMn Z ( Z  = Al, Si) Heuslers under pressure using the pseudo-potential plane wave method. The structural optimization was performed by considering three atomic arrangements in magnetic and non-magn...

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Veröffentlicht in:The European physical journal. B, Condensed matter physics Condensed matter physics, 2022-07, Vol.95 (7), Article 109
Hauptverfasser: Benaisti, I., Guechi, N., Dehbaoui, M., Roumili, A.
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Sprache:eng
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Zusammenfassung:In this work, we have studied the structural, thermal, elastic and magnetoelectronic properties of FeNiMn Z ( Z  = Al, Si) Heuslers under pressure using the pseudo-potential plane wave method. The structural optimization was performed by considering three atomic arrangements in magnetic and non-magnetic states. It was found that FeNiMn Z Heuslers are chemically stable and crystallize in the ferromagnetic Y I -type structure. At zero temperature (0 K) and zero pressure (0 GPa), the obtained lattice constant ( a ) and bulk modulus ( B ) are in good accordance with the literature. The determined elastic constants ( C ij ), Pugh’s ratio ( B / G ), and universal elastic anisotropy index ( A U ) under pressure reveal that FeNiMn Z Heuslers are mechanically stable up to 76 GPa, behave in a ductile manner, and exhibit a notable elastic anisotropy, respectively. The band structure analysis shows that FeNiMnAl Heusler compound changes from perfect half-metallic to a metallic nature at 50.2 GPa, while FeNiMnSi Heusler compound keeps its metallicity throughout the considered pressure range. The spin polarization and total magnetic moment of FeNiMnAl (FeNiMnSi) material decrease under pressure varying from 50.2 to 88 GPa (from 0 to 80 GPa). Below 50.2 GPa, FeNiMnAl material exhibits 100% spin polarization and a total magnetic moment of 4 μ B , which makes it hopeful in spintronic applications.
ISSN:1434-6028
1434-6036
DOI:10.1140/epjb/s10051-022-00372-3