Sol-gel-based metal-oxide thin-film transistors for high-performance flexible NMOS inverters

High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solu...

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Veröffentlicht in:	Journal of alloys and compounds 2022-08, Vol.912, p.165228, Article 165228
Hauptverfasser:	Park, Sang-Joon, Ha, Tae-Jun
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Bending stresses Charge transport Current leakage Flexible NMOS inverter Gallium High gain Indium gallium zinc oxide Inverters Leakage current Metal oxide semiconductors Non-quasi-static transient measurement Oxide-TFT Oxygen annealing Oxygen enrichment Semiconducting films Semiconductor devices Sol-gel processes Sol-gel-based metal-oxide films Substrates Temperature dependence Thin film transistors Threshold voltage Time constant Transistors Velocity distribution Zinc oxide Zirconium dioxide Zirconium oxides
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