Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing
Herein we report on the positive Seebeck coefficient S = 162 μV K−1 of niobium (Nb)-doped MoS2 films prepared by sputtering and activation of Nb atoms by sulfur vapor annealing. The p-type doping achieved via these processes is discussed based on changes in chemical bonding states and resistivity be...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2022-07, Vol.61 (7), p.075506 |
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container_issue | 7 |
container_start_page | 075506 |
container_title | Japanese Journal of Applied Physics |
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creator | Horiguchi, Taiga Hamada, Takuya Hamada, Masaya Muneta, Iriya Kakushima, Kuniyuki Tsutsui, Kazuo Tatsumi, Tetsuya Tomiya, Shigetaka Wakabayashi, Hitoshi |
description | Herein we report on the positive Seebeck coefficient S = 162 μV K−1 of niobium (Nb)-doped MoS2 films prepared by sputtering and activation of Nb atoms by sulfur vapor annealing. The p-type doping achieved via these processes is discussed based on changes in chemical bonding states and resistivity behavior in terms of annealing and measurement temperatures. The results of this study provide a new option for p-type doping of MoS2 films and are expected to contribute to the development of nanoelectronics and a smart society. |
doi_str_mv | 10.35848/1347-4065/ac7621 |
format | Article |
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The p-type doping achieved via these processes is discussed based on changes in chemical bonding states and resistivity behavior in terms of annealing and measurement temperatures. The results of this study provide a new option for p-type doping of MoS2 films and are expected to contribute to the development of nanoelectronics and a smart society.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ac7621</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>Annealing ; Atomic properties ; Chemical bonds ; Doping ; Molybdenum disulfide ; Nanoelectronics ; Niobium ; Seebeck coefficient ; Seebeck effect ; Sputtering ; Sulfur ; thermoelectric generator ; transition metal dichalcogenides</subject><ispartof>Japanese Journal of Applied Physics, 2022-07, Vol.61 (7), p.075506</ispartof><rights>2022 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd</rights><rights>2022 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). 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J. Appl. Phys</addtitle><description>Herein we report on the positive Seebeck coefficient S = 162 μV K−1 of niobium (Nb)-doped MoS2 films prepared by sputtering and activation of Nb atoms by sulfur vapor annealing. The p-type doping achieved via these processes is discussed based on changes in chemical bonding states and resistivity behavior in terms of annealing and measurement temperatures. The results of this study provide a new option for p-type doping of MoS2 films and are expected to contribute to the development of nanoelectronics and a smart society.</description><subject>Annealing</subject><subject>Atomic properties</subject><subject>Chemical bonds</subject><subject>Doping</subject><subject>Molybdenum disulfide</subject><subject>Nanoelectronics</subject><subject>Niobium</subject><subject>Seebeck coefficient</subject><subject>Seebeck effect</subject><subject>Sputtering</subject><subject>Sulfur</subject><subject>thermoelectric generator</subject><subject>transition metal dichalcogenides</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><recordid>eNptkEtLAzEUhYMoWKs_wF3AjZuxeUySmaUUX1BRqK5DMrmRjO1knEfFf29qfWxcXe453z0XDkKnlFxwUeTFjPJcZTmRYmYqJRndQ5NfaR9NCGE0y0vGDtFR39dplSKnE_T-GPswhA3gJYCF6hVXEbwPVYBmwNHjJkQbxnXmYgsO38clwz6s1thBu71Mmv3AfTsOA3ShecGmcdhUKdH8eOPKjx3emDZ2yW3ArBJ3jA68WfVw8j2n6Pn66ml-my0ebu7ml4sscK6GzBbclIIyBUxaB5QWjBnDreKcUWltIVhllMlFlYuSSgnAvZM544Y5XoLlU3S2y227-DZCP-g6jl2TXmomC05lSShNVLajQmz_AEr0V7d6W6TeFql33Sb-_B--rk2rJdVKEyUEkbp1nn8CnHR7JQ</recordid><startdate>20220701</startdate><enddate>20220701</enddate><creator>Horiguchi, Taiga</creator><creator>Hamada, Takuya</creator><creator>Hamada, Masaya</creator><creator>Muneta, Iriya</creator><creator>Kakushima, Kuniyuki</creator><creator>Tsutsui, Kazuo</creator><creator>Tatsumi, Tetsuya</creator><creator>Tomiya, Shigetaka</creator><creator>Wakabayashi, Hitoshi</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>O3W</scope><scope>TSCCA</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3648-7677</orcidid><orcidid>https://orcid.org/0000-0002-5830-5283</orcidid></search><sort><creationdate>20220701</creationdate><title>Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing</title><author>Horiguchi, Taiga ; Hamada, Takuya ; Hamada, Masaya ; Muneta, Iriya ; Kakushima, Kuniyuki ; Tsutsui, Kazuo ; Tatsumi, Tetsuya ; Tomiya, Shigetaka ; Wakabayashi, Hitoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i337t-b83a95127e26bde11822aa3b733216bb852ca7a45c459166ee3fd6423a2d39eb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Annealing</topic><topic>Atomic properties</topic><topic>Chemical bonds</topic><topic>Doping</topic><topic>Molybdenum disulfide</topic><topic>Nanoelectronics</topic><topic>Niobium</topic><topic>Seebeck coefficient</topic><topic>Seebeck effect</topic><topic>Sputtering</topic><topic>Sulfur</topic><topic>thermoelectric generator</topic><topic>transition metal dichalcogenides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Horiguchi, Taiga</creatorcontrib><creatorcontrib>Hamada, Takuya</creatorcontrib><creatorcontrib>Hamada, Masaya</creatorcontrib><creatorcontrib>Muneta, Iriya</creatorcontrib><creatorcontrib>Kakushima, Kuniyuki</creatorcontrib><creatorcontrib>Tsutsui, Kazuo</creatorcontrib><creatorcontrib>Tatsumi, Tetsuya</creatorcontrib><creatorcontrib>Tomiya, Shigetaka</creatorcontrib><creatorcontrib>Wakabayashi, Hitoshi</creatorcontrib><collection>Institute of Physics Open Access Journal Titles</collection><collection>IOPscience (Open Access)</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Horiguchi, Taiga</au><au>Hamada, Takuya</au><au>Hamada, Masaya</au><au>Muneta, Iriya</au><au>Kakushima, Kuniyuki</au><au>Tsutsui, Kazuo</au><au>Tatsumi, Tetsuya</au><au>Tomiya, Shigetaka</au><au>Wakabayashi, Hitoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2022-07-01</date><risdate>2022</risdate><volume>61</volume><issue>7</issue><spage>075506</spage><pages>075506-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>Herein we report on the positive Seebeck coefficient S = 162 μV K−1 of niobium (Nb)-doped MoS2 films prepared by sputtering and activation of Nb atoms by sulfur vapor annealing. The p-type doping achieved via these processes is discussed based on changes in chemical bonding states and resistivity behavior in terms of annealing and measurement temperatures. 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subjects | Annealing Atomic properties Chemical bonds Doping Molybdenum disulfide Nanoelectronics Niobium Seebeck coefficient Seebeck effect Sputtering Sulfur thermoelectric generator transition metal dichalcogenides |
title | Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing |
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