Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing

Herein we report on the positive Seebeck coefficient S = 162 μV K−1 of niobium (Nb)-doped MoS2 films prepared by sputtering and activation of Nb atoms by sulfur vapor annealing. The p-type doping achieved via these processes is discussed based on changes in chemical bonding states and resistivity be...

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Veröffentlicht in:Japanese Journal of Applied Physics 2022-07, Vol.61 (7), p.075506
Hauptverfasser: Horiguchi, Taiga, Hamada, Takuya, Hamada, Masaya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
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container_issue 7
container_start_page 075506
container_title Japanese Journal of Applied Physics
container_volume 61
creator Horiguchi, Taiga
Hamada, Takuya
Hamada, Masaya
Muneta, Iriya
Kakushima, Kuniyuki
Tsutsui, Kazuo
Tatsumi, Tetsuya
Tomiya, Shigetaka
Wakabayashi, Hitoshi
description Herein we report on the positive Seebeck coefficient S = 162 μV K−1 of niobium (Nb)-doped MoS2 films prepared by sputtering and activation of Nb atoms by sulfur vapor annealing. The p-type doping achieved via these processes is discussed based on changes in chemical bonding states and resistivity behavior in terms of annealing and measurement temperatures. The results of this study provide a new option for p-type doping of MoS2 films and are expected to contribute to the development of nanoelectronics and a smart society.
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subjects Annealing
Atomic properties
Chemical bonds
Doping
Molybdenum disulfide
Nanoelectronics
Niobium
Seebeck coefficient
Seebeck effect
Sputtering
Sulfur
thermoelectric generator
transition metal dichalcogenides
title Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing
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