Improvement of Ferroelectricity and Reliability in Hf0.5Zr0.5O2 Thin Films With Two-Step Oxygen Vacancy Engineering

A two-step oxygen vacancy (V O ) engineering technique is presented to enhance the ferroelectricity of Hf 0.5 Zr 0.5 O 2 (HZO) film with superior dielectric reliability. The V O engineering consists of two steps: 1) V O formation in the HZO film to stabilize the orthorhombic phase and 2) V O passiva...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2022-07, Vol.43 (7), p.1057-1060
Hauptverfasser:	Su, Mingji, Gao, Shifan, Weng, Zeping, Zhao, Liang, Lee, Choonghyun, Zhao, Yi
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Capacitors Ferroelectricity Hf-based oxides High temperature Leakage currents low thermal budget Orthorhombic phase Oxygen oxygen vacancy Passivation Reliability Reliability engineering Temperature Thin films Vacancies
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!