10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography

We fabricated a 1.50‐inch, 3207‐ppi OLED display with drivers capable of 32‐division driving, which is achieved by monolithically stacking OSFETs over SiFETs. Taking advantages of minute OSFETs with a high withstand voltage, Si‐OS connection regions were provided in subpixels to connect Si drivers a...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2022-06, Vol.53 (1), p.94-97
Hauptverfasser: Saito, Toshihiko, Mizuguchi, Toshiki, Okamoto, Yuki, Ito, Minato, Toyotaka, Kouhei, Kozuma, Munehiro, Matsuzaki, Takanori, Kobayashi, Hidetomo, Onuki, Tatsuya, Hiura, Yoshikazu, Hodo, Ryota, Sasagawa, Shinya, Kunitake, Hitoshi, Nakamura, Daiki, Sato, Hitomi, Kimura, Hajime, Wu, Chih-Chiang, Yoshida, Hiroshi, Chen, Min-Cheng, Liao, Ming-Han, Chang, Shou-Zen, Yamazaki, Shunpei
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container_title SID International Symposium Digest of technical papers
container_volume 53
creator Saito, Toshihiko
Mizuguchi, Toshiki
Okamoto, Yuki
Ito, Minato
Toyotaka, Kouhei
Kozuma, Munehiro
Matsuzaki, Takanori
Kobayashi, Hidetomo
Onuki, Tatsuya
Hiura, Yoshikazu
Hodo, Ryota
Sasagawa, Shinya
Kunitake, Hitoshi
Nakamura, Daiki
Sato, Hitomi
Kimura, Hajime
Wu, Chih-Chiang
Yoshida, Hiroshi
Chen, Min-Cheng
Liao, Ming-Han
Chang, Shou-Zen
Yamazaki, Shunpei
description We fabricated a 1.50‐inch, 3207‐ppi OLED display with drivers capable of 32‐division driving, which is achieved by monolithically stacking OSFETs over SiFETs. Taking advantages of minute OSFETs with a high withstand voltage, Si‐OS connection regions were provided in subpixels to connect Si drivers and OS pixel arrays at given positions.
doi_str_mv 10.1002/sdtp.15425
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source Wiley Online Library Journals Frontfile Complete
subjects CAAC-OS
driver
High-definition
Integrated circuits
Microdisplay
OLED
OSLSI
Photolithography
Pixels
title 10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography
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