Ultraefficient resistance switching between charge ordered phases in 1T-TaS2 with a single picosecond electrical pulse

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS2 has shown to be potentially useful for development of...

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Veröffentlicht in:	Applied physics letters 2022-06, Vol.120 (25)
Hauptverfasser:	Venturini, Rok, Mraz, Anže, Vaskivskyi, Igor, Vaskivskyi, Yevhenii, Svetin, Damjan, Mertelj, Tomaž, Pavlovič, Leon, Cheng, Jing, Chen, Genyu, Amarasinghe, Priyanthi, Qadri, Syed B., Trivedi, Sudhir B., Sobolewski, Roman, Mihailovic, Dragan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics ENGINEERING Low resistance Memory devices Optoelectronics Photoexcitation Physics Pulse propagation Substrates Switching Temporal resolution
Online-Zugang:	Volltext
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