Enhanced energy storage properties in relaxor Pb(Mg1/3Nb2/3)O3-PbTiO3 thin-film capacitors by incorporating buffer layers
Recently, relaxor ferroelectric thin-film capacitors have attracted considerable attention for energy storage applications since their slim-type polarization–electric field hysteresis loops can yield large recoverable energy density (Wrec) and high efficiency (η). In this work, we study the effects...
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Veröffentlicht in: | Applied physics letters 2022-06, Vol.120 (25) |
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creator | Li, Yuke Xu, Jibo Xu, Zhiyu Yu, Yahui Zhang, Yuanhao Lu, Lingzhi Zheng, Weijie Ding, Chunyan Wen, Zonghan Shi, Hongyan Lu, Chaojing Wen, Zheng |
description | Recently, relaxor ferroelectric thin-film capacitors have attracted considerable attention for energy storage applications since their slim-type polarization–electric field hysteresis loops can yield large recoverable energy density (Wrec) and high efficiency (η). In this work, we study the effects of buffer layers on energy storage properties of 0.93Pb(Mg1/3Nb2/3)O3-0.07PbTiO3 (PMN-PT) thin-film capacitors with a 5 nm-thick SrTiO3 (STO) and LaAlO3 (LAO) films. The energy storage properties of Pt/PMN-PT/SrRuO3 (SRO) capacitors are found to be significantly changed by incorporating the STO or LAO buffer layer at the top Pt/PMN-PT interface, while inserting the buffer layer at bottom PMN-PT/SRO interface shows negligible effects on the electrical properties. Specifically, with the STO buffering, the breakdown field is dramatically increased in the Pt/STO/PMN-PT/SRO capacitor due to the existence of an internal field in the STO, which prevents the growth of electrical trees from the bottom SRO to the top Pt electrode, and a large Wrec of ∼48.91 J/cm3, more than three times of that of the PMN-PT capacitor, is achieved. However, buffered by the LAO, the Pt/LAO/PMN-PT/SRO capacitor exhibits a reduced relaxor character, which may be ascribed to a pinning effect of nanodomains associated with the charged LAO/PMN-PT interface. As a result, both Wrec and η are significantly lowered, compared to the non-buffered PMN-PT capacitor. These results provide physical insights into the modulation of relaxor and dielectric behaviors by designing the characteristics of buffer layers, demonstrating a way for enhancing energy storage properties in thin-film capacitors. |
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In this work, we study the effects of buffer layers on energy storage properties of 0.93Pb(Mg1/3Nb2/3)O3-0.07PbTiO3 (PMN-PT) thin-film capacitors with a 5 nm-thick SrTiO3 (STO) and LaAlO3 (LAO) films. The energy storage properties of Pt/PMN-PT/SrRuO3 (SRO) capacitors are found to be significantly changed by incorporating the STO or LAO buffer layer at the top Pt/PMN-PT interface, while inserting the buffer layer at bottom PMN-PT/SRO interface shows negligible effects on the electrical properties. Specifically, with the STO buffering, the breakdown field is dramatically increased in the Pt/STO/PMN-PT/SRO capacitor due to the existence of an internal field in the STO, which prevents the growth of electrical trees from the bottom SRO to the top Pt electrode, and a large Wrec of ∼48.91 J/cm3, more than three times of that of the PMN-PT capacitor, is achieved. However, buffered by the LAO, the Pt/LAO/PMN-PT/SRO capacitor exhibits a reduced relaxor character, which may be ascribed to a pinning effect of nanodomains associated with the charged LAO/PMN-PT interface. As a result, both Wrec and η are significantly lowered, compared to the non-buffered PMN-PT capacitor. These results provide physical insights into the modulation of relaxor and dielectric behaviors by designing the characteristics of buffer layers, demonstrating a way for enhancing energy storage properties in thin-film capacitors.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0094247</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Buffer layers ; Capacitors ; Dielectric relaxation ; Electric fields ; Electrical properties ; Energy storage ; Ferroelectricity ; Hysteresis loops ; Relaxors ; Thin films</subject><ispartof>Applied physics letters, 2022-06, Vol.120 (25)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c172f-680c371492062e0febce96fd54312732abc42749843820c7f4143fe753d057083</citedby><cites>FETCH-LOGICAL-c172f-680c371492062e0febce96fd54312732abc42749843820c7f4143fe753d057083</cites><orcidid>0000-0001-5026-6585</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0094247$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76127</link.rule.ids></links><search><creatorcontrib>Li, Yuke</creatorcontrib><creatorcontrib>Xu, Jibo</creatorcontrib><creatorcontrib>Xu, Zhiyu</creatorcontrib><creatorcontrib>Yu, Yahui</creatorcontrib><creatorcontrib>Zhang, Yuanhao</creatorcontrib><creatorcontrib>Lu, Lingzhi</creatorcontrib><creatorcontrib>Zheng, Weijie</creatorcontrib><creatorcontrib>Ding, Chunyan</creatorcontrib><creatorcontrib>Wen, Zonghan</creatorcontrib><creatorcontrib>Shi, Hongyan</creatorcontrib><creatorcontrib>Lu, Chaojing</creatorcontrib><creatorcontrib>Wen, Zheng</creatorcontrib><title>Enhanced energy storage properties in relaxor Pb(Mg1/3Nb2/3)O3-PbTiO3 thin-film capacitors by incorporating buffer layers</title><title>Applied physics letters</title><description>Recently, relaxor ferroelectric thin-film capacitors have attracted considerable attention for energy storage applications since their slim-type polarization–electric field hysteresis loops can yield large recoverable energy density (Wrec) and high efficiency (η). In this work, we study the effects of buffer layers on energy storage properties of 0.93Pb(Mg1/3Nb2/3)O3-0.07PbTiO3 (PMN-PT) thin-film capacitors with a 5 nm-thick SrTiO3 (STO) and LaAlO3 (LAO) films. The energy storage properties of Pt/PMN-PT/SrRuO3 (SRO) capacitors are found to be significantly changed by incorporating the STO or LAO buffer layer at the top Pt/PMN-PT interface, while inserting the buffer layer at bottom PMN-PT/SRO interface shows negligible effects on the electrical properties. Specifically, with the STO buffering, the breakdown field is dramatically increased in the Pt/STO/PMN-PT/SRO capacitor due to the existence of an internal field in the STO, which prevents the growth of electrical trees from the bottom SRO to the top Pt electrode, and a large Wrec of ∼48.91 J/cm3, more than three times of that of the PMN-PT capacitor, is achieved. However, buffered by the LAO, the Pt/LAO/PMN-PT/SRO capacitor exhibits a reduced relaxor character, which may be ascribed to a pinning effect of nanodomains associated with the charged LAO/PMN-PT interface. As a result, both Wrec and η are significantly lowered, compared to the non-buffered PMN-PT capacitor. These results provide physical insights into the modulation of relaxor and dielectric behaviors by designing the characteristics of buffer layers, demonstrating a way for enhancing energy storage properties in thin-film capacitors.</description><subject>Applied physics</subject><subject>Buffer layers</subject><subject>Capacitors</subject><subject>Dielectric relaxation</subject><subject>Electric fields</subject><subject>Electrical properties</subject><subject>Energy storage</subject><subject>Ferroelectricity</subject><subject>Hysteresis loops</subject><subject>Relaxors</subject><subject>Thin films</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNqdkF1LwzAUhoMoOKcX_oOAN07oluSkTXspY36Aul3M65KmSdfRpTXpxP57Mzbw3qvDgee8h-dF6JaSKSUJzOIpIRlnXJyhESVCREBpeo5GhBCIkiyml-jK-21YYwYwQsPCbqRVusTaalcN2Petk5XGnWs77fpae1xb7HQjf1qHV8X9e0Vn8FGwGUyWEK2Kdb0E3G9qG5m62WElO6nqEOJxMYRT1bouJPa1rXCxN0Y73MhBO3-NLoxsvL45zTH6fFqs5y_R2_L5df74FikqmImSlCgQlGeMJEwTowuls8SUMQfKBDBZKM4Ez1IOKSNKGE45GC1iKEksSApjdHfMDUZfe-37fNvunQ0vc5aINKMZiQ_U5Egp13rvtMk7V--kG3JK8kOzeZyfmg3sw5H1QTSYtfZ_8Hfr_sC8Kw38AiLjhTg</recordid><startdate>20220620</startdate><enddate>20220620</enddate><creator>Li, Yuke</creator><creator>Xu, Jibo</creator><creator>Xu, Zhiyu</creator><creator>Yu, Yahui</creator><creator>Zhang, Yuanhao</creator><creator>Lu, Lingzhi</creator><creator>Zheng, Weijie</creator><creator>Ding, Chunyan</creator><creator>Wen, Zonghan</creator><creator>Shi, Hongyan</creator><creator>Lu, Chaojing</creator><creator>Wen, Zheng</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5026-6585</orcidid></search><sort><creationdate>20220620</creationdate><title>Enhanced energy storage properties in relaxor Pb(Mg1/3Nb2/3)O3-PbTiO3 thin-film capacitors by incorporating buffer layers</title><author>Li, Yuke ; Xu, Jibo ; Xu, Zhiyu ; Yu, Yahui ; Zhang, Yuanhao ; Lu, Lingzhi ; Zheng, Weijie ; Ding, Chunyan ; Wen, Zonghan ; Shi, Hongyan ; Lu, Chaojing ; Wen, Zheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c172f-680c371492062e0febce96fd54312732abc42749843820c7f4143fe753d057083</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Buffer layers</topic><topic>Capacitors</topic><topic>Dielectric relaxation</topic><topic>Electric fields</topic><topic>Electrical properties</topic><topic>Energy storage</topic><topic>Ferroelectricity</topic><topic>Hysteresis loops</topic><topic>Relaxors</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Yuke</creatorcontrib><creatorcontrib>Xu, Jibo</creatorcontrib><creatorcontrib>Xu, Zhiyu</creatorcontrib><creatorcontrib>Yu, Yahui</creatorcontrib><creatorcontrib>Zhang, Yuanhao</creatorcontrib><creatorcontrib>Lu, Lingzhi</creatorcontrib><creatorcontrib>Zheng, Weijie</creatorcontrib><creatorcontrib>Ding, Chunyan</creatorcontrib><creatorcontrib>Wen, Zonghan</creatorcontrib><creatorcontrib>Shi, Hongyan</creatorcontrib><creatorcontrib>Lu, Chaojing</creatorcontrib><creatorcontrib>Wen, Zheng</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Yuke</au><au>Xu, Jibo</au><au>Xu, Zhiyu</au><au>Yu, Yahui</au><au>Zhang, Yuanhao</au><au>Lu, Lingzhi</au><au>Zheng, Weijie</au><au>Ding, Chunyan</au><au>Wen, Zonghan</au><au>Shi, Hongyan</au><au>Lu, Chaojing</au><au>Wen, Zheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced energy storage properties in relaxor Pb(Mg1/3Nb2/3)O3-PbTiO3 thin-film capacitors by incorporating buffer layers</atitle><jtitle>Applied physics letters</jtitle><date>2022-06-20</date><risdate>2022</risdate><volume>120</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Recently, relaxor ferroelectric thin-film capacitors have attracted considerable attention for energy storage applications since their slim-type polarization–electric field hysteresis loops can yield large recoverable energy density (Wrec) and high efficiency (η). In this work, we study the effects of buffer layers on energy storage properties of 0.93Pb(Mg1/3Nb2/3)O3-0.07PbTiO3 (PMN-PT) thin-film capacitors with a 5 nm-thick SrTiO3 (STO) and LaAlO3 (LAO) films. The energy storage properties of Pt/PMN-PT/SrRuO3 (SRO) capacitors are found to be significantly changed by incorporating the STO or LAO buffer layer at the top Pt/PMN-PT interface, while inserting the buffer layer at bottom PMN-PT/SRO interface shows negligible effects on the electrical properties. Specifically, with the STO buffering, the breakdown field is dramatically increased in the Pt/STO/PMN-PT/SRO capacitor due to the existence of an internal field in the STO, which prevents the growth of electrical trees from the bottom SRO to the top Pt electrode, and a large Wrec of ∼48.91 J/cm3, more than three times of that of the PMN-PT capacitor, is achieved. However, buffered by the LAO, the Pt/LAO/PMN-PT/SRO capacitor exhibits a reduced relaxor character, which may be ascribed to a pinning effect of nanodomains associated with the charged LAO/PMN-PT interface. As a result, both Wrec and η are significantly lowered, compared to the non-buffered PMN-PT capacitor. These results provide physical insights into the modulation of relaxor and dielectric behaviors by designing the characteristics of buffer layers, demonstrating a way for enhancing energy storage properties in thin-film capacitors.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0094247</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-5026-6585</orcidid></addata></record> |
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subjects | Applied physics Buffer layers Capacitors Dielectric relaxation Electric fields Electrical properties Energy storage Ferroelectricity Hysteresis loops Relaxors Thin films |
title | Enhanced energy storage properties in relaxor Pb(Mg1/3Nb2/3)O3-PbTiO3 thin-film capacitors by incorporating buffer layers |
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