Bubble Nucleation During Oxidation of SiC

Oxidation of SiC at 1400°C–1700°C produces carbon monoxide (CO), which can form bubbles at the interface between the substrate and the silica (SiO2) overgrowth. The bubbles add complexity to the mechanistic understanding of the oxidation process. We analyze the kinetics of bubble formation, where th...

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Veröffentlicht in:	Journal of the American Ceramic Society 2015-08, Vol.98 (8), p.2579-2586
Hauptverfasser:	Raj, Rishi, Terauds, Kalvis
Format:	Artikel
Sprache:	eng
Schlagworte:	Bubbles Carbon monoxide Experiments Gas pressure Grain boundaries Nucleation Oxidation Partial pressure Precipitates Silicon carbide Silicon dioxide Substrates Superalloys Viscosity Viscous flow
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