High-Performance Field Electron Emitters Fabricated Using a Free-Standing Carbon Nanotube Film
The carbon nanotube (CNT) field emitter was fabricated using a thin free-standing CNT film, indicating a line-shape CNT field emitter. Field emission properties of the CNT field emitter were investigated in both diode and triode configurations. The CNT field emitter showed a low turn-on electric fie...
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| Veröffentlicht in: | IEEE journal of the Electron Devices Society 2022, Vol.10, p.402-407 |
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| container_title | IEEE journal of the Electron Devices Society |
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| creator | Han, Jun Soo Lee, Sang Heon Lee, Cheol Jin |
| description | The carbon nanotube (CNT) field emitter was fabricated using a thin free-standing CNT film, indicating a line-shape CNT field emitter. Field emission properties of the CNT field emitter were investigated in both diode and triode configurations. The CNT field emitter showed a low turn-on electric field of 1.8 V/ \mu m and a high emission current of 40.3 mA, corresponding to the emission current density of 96 A/cm 2 in the diode configuration. It also exhibited a high anode current of 40 mA, corresponding to the anode current density of 95.2 A/cm 2 in the triode configuration. In addition, the CNT field emitter showed a good electron beam transmittance of 86.4% and excellent emission stability without degradation for 15 h. The main reason for the high performance of our CNT field emitter is caused by the high density of emission sites at the edge of the CNT film. |
| doi_str_mv | 10.1109/JEDS.2022.3178742 |
| format | Article |
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Field emission properties of the CNT field emitter were investigated in both diode and triode configurations. The CNT field emitter showed a low turn-on electric field of 1.8 V/<inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>m and a high emission current of 40.3 mA, corresponding to the emission current density of 96 A/cm 2 in the diode configuration. It also exhibited a high anode current of 40 mA, corresponding to the anode current density of 95.2 A/cm 2 in the triode configuration. In addition, the CNT field emitter showed a good electron beam transmittance of 86.4% and excellent emission stability without degradation for 15 h. The main reason for the high performance of our CNT field emitter is caused by the high density of emission sites at the edge of the CNT film.</description><identifier>ISSN: 2168-6734</identifier><identifier>EISSN: 2168-6734</identifier><identifier>DOI: 10.1109/JEDS.2022.3178742</identifier><identifier>CODEN: IJEDAC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Anodes ; Carbon nanotube (CNT) ; Carbon nanotube film ; Carbon nanotubes ; Cathodes ; Configurations ; Current density ; Electric fields ; Electron beams ; Emission analysis ; Emitters ; Emitters (electron) ; Field emission ; field emitter ; Logic gates ; Metals ; Scanning electron microscopy ; Triodes</subject><ispartof>IEEE journal of the Electron Devices Society, 2022, Vol.10, p.402-407</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2472-8cb7ae177dd88c0b1dbf7cf1150d6e7bcce88a09aff9a0205abc241f0fd978ee3</citedby><cites>FETCH-LOGICAL-c2472-8cb7ae177dd88c0b1dbf7cf1150d6e7bcce88a09aff9a0205abc241f0fd978ee3</cites><orcidid>0000-0001-8850-8981 ; 0000-0002-3090-8955 ; 0000-0002-3604-3972</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9784900$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,777,781,861,2096,4010,27614,27904,27905,27906,54914</link.rule.ids></links><search><creatorcontrib>Han, Jun Soo</creatorcontrib><creatorcontrib>Lee, Sang Heon</creatorcontrib><creatorcontrib>Lee, Cheol Jin</creatorcontrib><title>High-Performance Field Electron Emitters Fabricated Using a Free-Standing Carbon Nanotube Film</title><title>IEEE journal of the Electron Devices Society</title><addtitle>JEDS</addtitle><description>The carbon nanotube (CNT) field emitter was fabricated using a thin free-standing CNT film, indicating a line-shape CNT field emitter. Field emission properties of the CNT field emitter were investigated in both diode and triode configurations. The CNT field emitter showed a low turn-on electric field of 1.8 V/<inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>m and a high emission current of 40.3 mA, corresponding to the emission current density of 96 A/cm 2 in the diode configuration. It also exhibited a high anode current of 40 mA, corresponding to the anode current density of 95.2 A/cm 2 in the triode configuration. In addition, the CNT field emitter showed a good electron beam transmittance of 86.4% and excellent emission stability without degradation for 15 h. The main reason for the high performance of our CNT field emitter is caused by the high density of emission sites at the edge of the CNT film.</description><subject>Anodes</subject><subject>Carbon nanotube (CNT)</subject><subject>Carbon nanotube film</subject><subject>Carbon nanotubes</subject><subject>Cathodes</subject><subject>Configurations</subject><subject>Current density</subject><subject>Electric fields</subject><subject>Electron beams</subject><subject>Emission analysis</subject><subject>Emitters</subject><subject>Emitters (electron)</subject><subject>Field emission</subject><subject>field emitter</subject><subject>Logic gates</subject><subject>Metals</subject><subject>Scanning electron microscopy</subject><subject>Triodes</subject><issn>2168-6734</issn><issn>2168-6734</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpNUU1LAzEQXURBUX-AeFnwvDXJpvk4Sm2tIiqoV8MkmdSU7Uaz24P_3l0r4lzmg_fezPCK4oySCaVEX97Nr58njDA2qalUkrO94ohRoSoha77_rz4sTrtuTYZQVGghjoq3ZVy9V0-YQ8obaB2Wi4iNL-cNuj6ntpxvYt9j7soF2Bwd9OjL1y62qxLKRUasnnto_djPINuB8ABt6rd2FGo2J8VBgKbD0998XLwu5i-zZXX_eHM7u7qvHOOSVcpZCUil9F4pRyz1NkgXKJ0SL1Ba51ApIBpC0EAYmYIdiDSQ4LVUiPVxcbvT9QnW5iPHDeQvkyCan0HKKwO5j65BI3XNa6tYsMC5A6lBBATPHHfcUs0HrYud1kdOn1vserNO29wO5xsm5JTwmk7FgKI7lMup6zKGv62UmNEVM7piRlfMrysD53zHiYj4hx8-4JqQ-hsQ64is</recordid><startdate>2022</startdate><enddate>2022</enddate><creator>Han, Jun Soo</creator><creator>Lee, Sang Heon</creator><creator>Lee, Cheol Jin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Field emission properties of the CNT field emitter were investigated in both diode and triode configurations. The CNT field emitter showed a low turn-on electric field of 1.8 V/<inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>m and a high emission current of 40.3 mA, corresponding to the emission current density of 96 A/cm 2 in the diode configuration. It also exhibited a high anode current of 40 mA, corresponding to the anode current density of 95.2 A/cm 2 in the triode configuration. In addition, the CNT field emitter showed a good electron beam transmittance of 86.4% and excellent emission stability without degradation for 15 h. The main reason for the high performance of our CNT field emitter is caused by the high density of emission sites at the edge of the CNT film.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JEDS.2022.3178742</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-8850-8981</orcidid><orcidid>https://orcid.org/0000-0002-3090-8955</orcidid><orcidid>https://orcid.org/0000-0002-3604-3972</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Anodes Carbon nanotube (CNT) Carbon nanotube film Carbon nanotubes Cathodes Configurations Current density Electric fields Electron beams Emission analysis Emitters Emitters (electron) Field emission field emitter Logic gates Metals Scanning electron microscopy Triodes |
| title | High-Performance Field Electron Emitters Fabricated Using a Free-Standing Carbon Nanotube Film |
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