Realization of volatile and non-volatile resistive switching with N-TiO2 nanorod arrays based memristive devices through compositional control

It is attractive to manipulate the volatile and non-volatile resistive switching behaviors of memristors to create genuine neuromorphic systems such as artificial neural networks (ANNs) and spiking neural networks (SNNs). To investigate the above behaviors, nitrogen has been introduced into TiO2 nan...

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Veröffentlicht in:Journal of alloys and compounds 2022-07, Vol.909, p.164743, Article 164743
Hauptverfasser: Yu, Yantao, Wang, Chunqi, Wen, Youquan, Jiang, Chao, Abrahams, Isaac, Du, Zuojuan, Sun, Jia, Huang, Xiaozhong
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Sprache:eng
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