Effect of high temperature homoepitaxial growth of β-Ga2O3 by hot-wall metalorganic vapor phase epitaxy

•Homoepitaxial growth of (010) β-Ga2O3 layers by hot-wall MOVPE was investigated.•All the layers grown at 800–1000 °C were single-crystalline without twinning.•A homoepitaxial layer with a smooth surface could be grown at 1000 °C.•The concentration of C impurities decreased by high temperature growt...

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Veröffentlicht in:	Journal of crystal growth 2022-03, Vol.582, p.126520, Article 126520
Hauptverfasser:	Ikenaga, Kazutada, Tanaka, Nami, Nishimura, Taro, Iino, Hirotaka, Goto, Ken, Ishikawa, Masato, Machida, Hideaki, Ueno, Tomo, Kumagai, Yoshinao
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Crystal structure A3. Metalorganic vapor phase epitaxy B1. Oxides B2. Semiconducting gallium compounds B2. Semiconducting III-VI materials Epitaxial growth Gallium oxides High temperature High temperature effects Impurities Island growth Low pressure Metalorganic chemical vapor deposition Single crystals Substrates Two dimensional flow Vapor phase epitaxy Vapor phases
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