Anomalous Hall effect and anisotropic magnetoresistance of molecular beam epitaxy grown Cr2Te3 thin films

•High quality Cr2Te3 epitaxial films were grown on SrTiO3 (111) substrates using MBE.•The optimal growth temperature of the Cr2Te3 films was 275 °C.•Cr2Te3 films show perpendicular magnetic anisotropy and anisotropic magnetoresistance.•Cr2Te3 films show coupled electronic and magnetic phase transiti...

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Veröffentlicht in:	Journal of crystal growth 2022-03, Vol.582, p.126541, Article 126541
Hauptverfasser:	Luo, Fu-Sheng, Ying, Jing-Shi, Chen, Ting-Wei, Tang, F., Zhang, Dan-Wen, Dong, Wei-Qi, Zhang, Ying, Li, Shuang-Shuang, Fang, Y., Zheng, Ren-Kui
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Anomalous Hall effect A1. Magnetoresistance A3. Molecular beam epitaxy B1. Cr2Te3 film B2. Ferroelectric materials B3. Field effect transistors Coercivity Electromagnetism Epitaxial growth Ferromagnetic materials Film thickness Hall effect Hysteresis loops Magnetic anisotropy Magnetism Magnetization Magnetoresistance Magnetoresistivity Molecular beam epitaxy Phase separation Single crystals Substrates Thin films
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