WO3 Passivation of Access Regions in Diamond MOSFETs
We study the impact of access region passivation on the electrical characteristics of hydrogen-terminated diamond MOSFETs with tungsten Carbide (WC) edge contacts. Our experiments reveal a significant improvement to both contact and extrinsic channel sheet resistance once the access regions are pass...
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| Veröffentlicht in: | IEEE transactions on electron devices 2022-06, Vol.69 (6), p.3334-3340 |
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| container_title | IEEE transactions on electron devices |
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| creator | Vardi, Alon Tordjman, Moshe Kalish, Rafi Alamo, Jesus A. del |
| description | We study the impact of access region passivation on the electrical characteristics of hydrogen-terminated diamond MOSFETs with tungsten Carbide (WC) edge contacts. Our experiments reveal a significant improvement to both contact and extrinsic channel sheet resistance once the access regions are passivated with WO 3 , indicating that WO 3 is an effective surface transfer-doping agent. We analyze a peculiar bump that appears in the subthreshold characteristics of the devices that prevents their effective turn-off. The bump is found to be mitigated when the access regions are passivated by WO 3 . Poisson-Schrödinger (P-S) simulations suggest that this bump arises from the field-effect action by the gate over the access region immediately adjoining the gate. This parasitic field effect arises when the surface is unpinned and with a light hole concentration. Owing to its increased surface transfer doping, the use of WO 3 as surface passivation is effective in delivering a sharp device turn-off. |
| doi_str_mv | 10.1109/TED.2022.3165735 |
| format | Article |
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Our experiments reveal a significant improvement to both contact and extrinsic channel sheet resistance once the access regions are passivated with WO 3 , indicating that WO 3 is an effective surface transfer-doping agent. We analyze a peculiar bump that appears in the subthreshold characteristics of the devices that prevents their effective turn-off. The bump is found to be mitigated when the access regions are passivated by WO 3 . Poisson-Schrödinger (P-S) simulations suggest that this bump arises from the field-effect action by the gate over the access region immediately adjoining the gate. This parasitic field effect arises when the surface is unpinned and with a light hole concentration. Owing to its increased surface transfer doping, the use of WO 3 as surface passivation is effective in delivering a sharp device turn-off.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2022.3165735</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Contact resistance ; Diamond ; Diamond MOSFET ; diamond:H ; Diamonds ; Doping ; drift-region passivation ; Electric contacts ; Logic gates ; MOSFET ; MOSFETs ; Passivation ; Passivity ; Surface resistance ; Surface treatment ; transfer doping ; transition metal oxide (TMO) ; Tungsten carbide ; Tungsten oxides</subject><ispartof>IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3334-3340</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-9125-4118 ; 0000-0003-4003-7863 ; 0000-0002-8294-3103</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9758827$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9758827$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Vardi, Alon</creatorcontrib><creatorcontrib>Tordjman, Moshe</creatorcontrib><creatorcontrib>Kalish, Rafi</creatorcontrib><creatorcontrib>Alamo, Jesus A. del</creatorcontrib><title>WO3 Passivation of Access Regions in Diamond MOSFETs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We study the impact of access region passivation on the electrical characteristics of hydrogen-terminated diamond MOSFETs with tungsten Carbide (WC) edge contacts. Our experiments reveal a significant improvement to both contact and extrinsic channel sheet resistance once the access regions are passivated with WO 3 , indicating that WO 3 is an effective surface transfer-doping agent. We analyze a peculiar bump that appears in the subthreshold characteristics of the devices that prevents their effective turn-off. The bump is found to be mitigated when the access regions are passivated by WO 3 . Poisson-Schrödinger (P-S) simulations suggest that this bump arises from the field-effect action by the gate over the access region immediately adjoining the gate. This parasitic field effect arises when the surface is unpinned and with a light hole concentration. Owing to its increased surface transfer doping, the use of WO 3 as surface passivation is effective in delivering a sharp device turn-off.</description><subject>Contact resistance</subject><subject>Diamond</subject><subject>Diamond MOSFET</subject><subject>diamond:H</subject><subject>Diamonds</subject><subject>Doping</subject><subject>drift-region passivation</subject><subject>Electric contacts</subject><subject>Logic gates</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Passivation</subject><subject>Passivity</subject><subject>Surface resistance</subject><subject>Surface treatment</subject><subject>transfer doping</subject><subject>transition metal oxide (TMO)</subject><subject>Tungsten carbide</subject><subject>Tungsten oxides</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotj89LwzAcxYMoWKd3wUvAc2u--SZpchzb_AGTik48ljRNJMO1s-kE_3sL8_R4jw_v8Qi5BlYAMHO3WS0LzjgvEJQsUZ6QDKQsc6OEOiUZY6BzgxrPyUVK28kqIXhGxEeF9MWmFH_sGPuO9oHOnfMp0Vf_OQWJxo4uo931XUufq7f71SZdkrNgv5K_-tcZeZ_ixWO-rh6eFvN1HgFxzK1wbYNoQUHJvJXGB24YMI0og9NBBw9BC8tbXQrGhPZt0wjnTKsapRBwRm6Pvfuh_z74NNbb_jB002TNlTLTBQN6om6OVPTe1_sh7uzwW5tSas1L_AO32k5I</recordid><startdate>20220601</startdate><enddate>20220601</enddate><creator>Vardi, Alon</creator><creator>Tordjman, Moshe</creator><creator>Kalish, Rafi</creator><creator>Alamo, Jesus A. del</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-9125-4118</orcidid><orcidid>https://orcid.org/0000-0003-4003-7863</orcidid><orcidid>https://orcid.org/0000-0002-8294-3103</orcidid></search><sort><creationdate>20220601</creationdate><title>WO3 Passivation of Access Regions in Diamond MOSFETs</title><author>Vardi, Alon ; Tordjman, Moshe ; Kalish, Rafi ; Alamo, Jesus A. del</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i133t-a4cdb33a16170ea59ef290108335fc8f8fe1f84a2d8740048edbb4cc9d6b66313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Contact resistance</topic><topic>Diamond</topic><topic>Diamond MOSFET</topic><topic>diamond:H</topic><topic>Diamonds</topic><topic>Doping</topic><topic>drift-region passivation</topic><topic>Electric contacts</topic><topic>Logic gates</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Passivation</topic><topic>Passivity</topic><topic>Surface resistance</topic><topic>Surface treatment</topic><topic>transfer doping</topic><topic>transition metal oxide (TMO)</topic><topic>Tungsten carbide</topic><topic>Tungsten oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vardi, Alon</creatorcontrib><creatorcontrib>Tordjman, Moshe</creatorcontrib><creatorcontrib>Kalish, Rafi</creatorcontrib><creatorcontrib>Alamo, Jesus A. del</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Vardi, Alon</au><au>Tordjman, Moshe</au><au>Kalish, Rafi</au><au>Alamo, Jesus A. del</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>WO3 Passivation of Access Regions in Diamond MOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2022-06-01</date><risdate>2022</risdate><volume>69</volume><issue>6</issue><spage>3334</spage><epage>3340</epage><pages>3334-3340</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We study the impact of access region passivation on the electrical characteristics of hydrogen-terminated diamond MOSFETs with tungsten Carbide (WC) edge contacts. Our experiments reveal a significant improvement to both contact and extrinsic channel sheet resistance once the access regions are passivated with WO 3 , indicating that WO 3 is an effective surface transfer-doping agent. We analyze a peculiar bump that appears in the subthreshold characteristics of the devices that prevents their effective turn-off. The bump is found to be mitigated when the access regions are passivated by WO 3 . Poisson-Schrödinger (P-S) simulations suggest that this bump arises from the field-effect action by the gate over the access region immediately adjoining the gate. This parasitic field effect arises when the surface is unpinned and with a light hole concentration. Owing to its increased surface transfer doping, the use of WO 3 as surface passivation is effective in delivering a sharp device turn-off.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2022.3165735</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-9125-4118</orcidid><orcidid>https://orcid.org/0000-0003-4003-7863</orcidid><orcidid>https://orcid.org/0000-0002-8294-3103</orcidid></addata></record> |
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| subjects | Contact resistance Diamond Diamond MOSFET diamond:H Diamonds Doping drift-region passivation Electric contacts Logic gates MOSFET MOSFETs Passivation Passivity Surface resistance Surface treatment transfer doping transition metal oxide (TMO) Tungsten carbide Tungsten oxides |
| title | WO3 Passivation of Access Regions in Diamond MOSFETs |
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