A Discharge-Path-Based Sensing Circuit With OTS Snapback Current Protection for Phase Change Memories

A discharge-path-based sensing circuit is proposed to reduce the damage caused by an ovonic threshold switch (OTS) snapback current to a phase-change memory (PCM). OTS devices are used as access devices (selectors) in most PCM systems to increase the sensitivity and resolve the leakage current probl...

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Veröffentlicht in:	IEEE access 2022, Vol.10, p.53513-53521
Hauptverfasser:	No, Taeung, Choi, Seonjun, Sung, Gaeryun, Kim, Seong-Beom, Han, Jaeduk, Song, Yun-Heub
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuit design Circuits Computer architecture Current mirrors Damage Discharge Discharges (electric) Energy consumption Leakage current Memory devices Microprocessors Phase change materials phase-change memories Public domain Resistance Selectors Sense amplifiers Sensors snapback currents
Online-Zugang:	Volltext
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