Enhanced photoresponse performance in GaN based symmetric type MSM ultraviolet-A and MIS ultraviolet-A to C photodetectors

To realize an improved sustainable future, additional developments in the energy consumption is a prerequisite important aspect for the operation of any electronic device. This is correspondingly true and intended for all the commercially existing photodetectors (PDs) which functions using large ext...

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Veröffentlicht in:	Sensors and actuators. A. Physical. 2022-06, Vol.339, p.113502, Article 113502
Hauptverfasser:	Nallabala, Nanda Kumar Reddy, Reddy, Vasudeva Reddy Minnam, Singh, V.R., Rahim Bakash, K., Kumar, Suresh, Saha, Debabratha, Mahendran, Vellaichamy, Kummara, Venkata Krishnaiah, Guntupalli, Gopi Krishna, Vattikuti, S.V. Prabhakar
Format:	Artikel
Sprache:	eng
Schlagworte:	Band gap Chemical composition Crystal structure Detector responsivity, Interdigitated electrodes and external quantum efficiency Electron beams Energy consumption Energy gap Gallium nitride Gallium nitrides Optical properties Oxidation Photometers Quantum efficiency Room temperature Selectivity Thin films Ultraviolet detectors Ultraviolet photodetector Ultraviolet radiation X ray photoelectron spectroscopy
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