Impact of Yb content on structural properties and ferroelectric characteristics of BiFeO3 thin films on Pt/TiN/Si substrates
This work reports the impact of Yb content on the structural and ferroelectric properties of the BiFeO 3 thin films fabricated on the Pt/TiN/Si substrates by dc and rf cosputtering. The Yb-doped BiFeO 3 thin films were prepared under three different Yb plasma powers (10 W, 11 W, 12 W). X-ray diffrac...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2022-06, Vol.128 (6), Article 503 |
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| creator | Pan, Tung-Ming Chou, Yu-Cheng Her, Jim-Long |
| description | This work reports the impact of Yb content on the structural and ferroelectric properties of the BiFeO
3
thin films fabricated on the Pt/TiN/Si substrates by dc and rf cosputtering. The Yb-doped BiFeO
3
thin films were prepared under three different Yb plasma powers (10 W, 11 W, 12 W). X-ray diffraction demonstrated that the Yb-doped BiFeO
3
thin films showed the distortion of rhombohedral structure. Scanning electron microscopy indicated that the Yb-doped BiFeO
3
thin film prepared at the 11 W condition exhibited smaller grain sizes than those of the other conditions. Atomic force microscopy revealed that the Yb-doped BiFeO
3
thin film treated at the 11 W condition featured a lower surface roughness compared with the other conditions. Secondary ion mass spectrometry manifested that the Yb-doped BiFeO
3
film showed the sharp compositional profiles near the BiFeO
3
/Pt interface. Moreover, X-ray photoelectron spectroscopy signified that the Yb-doped BiFeO
3
film fabricated at the 11 W condition possessed a higher Fe
3+
/Fe
2+
concentration ratio and a lower intensity of oxygen vacancies than the other conditions. Among these conditions, the BiFeO
3
thin film fabricated at the 11 W condition exhibited the lowest leakage current of 1.71 × 10
–5
A/cm
2
at an electric field of 200 kV/cm and the highest remnant polarization of 61.7 μC/cm
2
. |
| doi_str_mv | 10.1007/s00339-022-05652-4 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2666539174</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2666539174</sourcerecordid><originalsourceid>FETCH-LOGICAL-c249t-689ee9589334675b21564bf272170ea34b05500cea3c9d9dc37b758f85ecb58a3</originalsourceid><addsrcrecordid>eNp9kE9LAzEQxYMoWKtfwFPA89ps_u3mqMWqUKxgPXgK2XTWpmx3a5I9CH54s67gzbnMDLz3G-YhdJmT65yQYhYIYUxlhNKMCCloxo_QJOcsrZKRYzQhihdZyZQ8RWch7EgqTukEfT3uD8ZG3NX4rcK2ayO0aWtxiL63sfemwQffHcBHBwGbdoNr8L6DBmz0zmK7NT4BwLsQnQ0D6NYtYMVw3LoW167Zh4H3HGdr9zR7cTj0VYKbCOEcndSmCXDx26fodXG3nj9ky9X94_xmmVnKVcxkqQCUKBVjXBaiormQvKppQfOCgGG8IkIQYtNo1UZtLCuqQpR1KcBWojRsiq5Gbvrko4cQ9a7rfZtOaiqlFEzlBU8qOqqs70LwUOuDd3vjP3VO9JCyHlPWKWX9k7IeTGw0hSRu38H_of9xfQPgg4Bq</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2666539174</pqid></control><display><type>article</type><title>Impact of Yb content on structural properties and ferroelectric characteristics of BiFeO3 thin films on Pt/TiN/Si substrates</title><source>Springer Nature - Complete Springer Journals</source><creator>Pan, Tung-Ming ; Chou, Yu-Cheng ; Her, Jim-Long</creator><creatorcontrib>Pan, Tung-Ming ; Chou, Yu-Cheng ; Her, Jim-Long</creatorcontrib><description>This work reports the impact of Yb content on the structural and ferroelectric properties of the BiFeO
3
thin films fabricated on the Pt/TiN/Si substrates by dc and rf cosputtering. The Yb-doped BiFeO
3
thin films were prepared under three different Yb plasma powers (10 W, 11 W, 12 W). X-ray diffraction demonstrated that the Yb-doped BiFeO
3
thin films showed the distortion of rhombohedral structure. Scanning electron microscopy indicated that the Yb-doped BiFeO
3
thin film prepared at the 11 W condition exhibited smaller grain sizes than those of the other conditions. Atomic force microscopy revealed that the Yb-doped BiFeO
3
thin film treated at the 11 W condition featured a lower surface roughness compared with the other conditions. Secondary ion mass spectrometry manifested that the Yb-doped BiFeO
3
film showed the sharp compositional profiles near the BiFeO
3
/Pt interface. Moreover, X-ray photoelectron spectroscopy signified that the Yb-doped BiFeO
3
film fabricated at the 11 W condition possessed a higher Fe
3+
/Fe
2+
concentration ratio and a lower intensity of oxygen vacancies than the other conditions. Among these conditions, the BiFeO
3
thin film fabricated at the 11 W condition exhibited the lowest leakage current of 1.71 × 10
–5
A/cm
2
at an electric field of 200 kV/cm and the highest remnant polarization of 61.7 μC/cm
2
.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-022-05652-4</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Applied physics ; Atomic force microscopy ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Electric fields ; Ferroelectric materials ; Ferroelectricity ; Grain size ; Leakage current ; Machines ; Manufacturing ; Materials science ; Microscopy ; Nanotechnology ; Optical and Electronic Materials ; Photoelectrons ; Physics ; Physics and Astronomy ; Processes ; Secondary ion mass spectrometry ; Silicon substrates ; Surface roughness ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2022-06, Vol.128 (6), Article 503</ispartof><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2022</rights><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2022.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c249t-689ee9589334675b21564bf272170ea34b05500cea3c9d9dc37b758f85ecb58a3</citedby><cites>FETCH-LOGICAL-c249t-689ee9589334675b21564bf272170ea34b05500cea3c9d9dc37b758f85ecb58a3</cites><orcidid>0000-0002-1013-2571</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-022-05652-4$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-022-05652-4$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids></links><search><creatorcontrib>Pan, Tung-Ming</creatorcontrib><creatorcontrib>Chou, Yu-Cheng</creatorcontrib><creatorcontrib>Her, Jim-Long</creatorcontrib><title>Impact of Yb content on structural properties and ferroelectric characteristics of BiFeO3 thin films on Pt/TiN/Si substrates</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>This work reports the impact of Yb content on the structural and ferroelectric properties of the BiFeO
3
thin films fabricated on the Pt/TiN/Si substrates by dc and rf cosputtering. The Yb-doped BiFeO
3
thin films were prepared under three different Yb plasma powers (10 W, 11 W, 12 W). X-ray diffraction demonstrated that the Yb-doped BiFeO
3
thin films showed the distortion of rhombohedral structure. Scanning electron microscopy indicated that the Yb-doped BiFeO
3
thin film prepared at the 11 W condition exhibited smaller grain sizes than those of the other conditions. Atomic force microscopy revealed that the Yb-doped BiFeO
3
thin film treated at the 11 W condition featured a lower surface roughness compared with the other conditions. Secondary ion mass spectrometry manifested that the Yb-doped BiFeO
3
film showed the sharp compositional profiles near the BiFeO
3
/Pt interface. Moreover, X-ray photoelectron spectroscopy signified that the Yb-doped BiFeO
3
film fabricated at the 11 W condition possessed a higher Fe
3+
/Fe
2+
concentration ratio and a lower intensity of oxygen vacancies than the other conditions. Among these conditions, the BiFeO
3
thin film fabricated at the 11 W condition exhibited the lowest leakage current of 1.71 × 10
–5
A/cm
2
at an electric field of 200 kV/cm and the highest remnant polarization of 61.7 μC/cm
2
.</description><subject>Applied physics</subject><subject>Atomic force microscopy</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Electric fields</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Grain size</subject><subject>Leakage current</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Microscopy</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Photoelectrons</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Secondary ion mass spectrometry</subject><subject>Silicon substrates</subject><subject>Surface roughness</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKtfwFPA89ps_u3mqMWqUKxgPXgK2XTWpmx3a5I9CH54s67gzbnMDLz3G-YhdJmT65yQYhYIYUxlhNKMCCloxo_QJOcsrZKRYzQhihdZyZQ8RWch7EgqTukEfT3uD8ZG3NX4rcK2ayO0aWtxiL63sfemwQffHcBHBwGbdoNr8L6DBmz0zmK7NT4BwLsQnQ0D6NYtYMVw3LoW167Zh4H3HGdr9zR7cTj0VYKbCOEcndSmCXDx26fodXG3nj9ky9X94_xmmVnKVcxkqQCUKBVjXBaiormQvKppQfOCgGG8IkIQYtNo1UZtLCuqQpR1KcBWojRsiq5Gbvrko4cQ9a7rfZtOaiqlFEzlBU8qOqqs70LwUOuDd3vjP3VO9JCyHlPWKWX9k7IeTGw0hSRu38H_of9xfQPgg4Bq</recordid><startdate>20220601</startdate><enddate>20220601</enddate><creator>Pan, Tung-Ming</creator><creator>Chou, Yu-Cheng</creator><creator>Her, Jim-Long</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-1013-2571</orcidid></search><sort><creationdate>20220601</creationdate><title>Impact of Yb content on structural properties and ferroelectric characteristics of BiFeO3 thin films on Pt/TiN/Si substrates</title><author>Pan, Tung-Ming ; Chou, Yu-Cheng ; Her, Jim-Long</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c249t-689ee9589334675b21564bf272170ea34b05500cea3c9d9dc37b758f85ecb58a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Atomic force microscopy</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Electric fields</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Grain size</topic><topic>Leakage current</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Microscopy</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Photoelectrons</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Secondary ion mass spectrometry</topic><topic>Silicon substrates</topic><topic>Surface roughness</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pan, Tung-Ming</creatorcontrib><creatorcontrib>Chou, Yu-Cheng</creatorcontrib><creatorcontrib>Her, Jim-Long</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pan, Tung-Ming</au><au>Chou, Yu-Cheng</au><au>Her, Jim-Long</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of Yb content on structural properties and ferroelectric characteristics of BiFeO3 thin films on Pt/TiN/Si substrates</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2022-06-01</date><risdate>2022</risdate><volume>128</volume><issue>6</issue><artnum>503</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>This work reports the impact of Yb content on the structural and ferroelectric properties of the BiFeO
3
thin films fabricated on the Pt/TiN/Si substrates by dc and rf cosputtering. The Yb-doped BiFeO
3
thin films were prepared under three different Yb plasma powers (10 W, 11 W, 12 W). X-ray diffraction demonstrated that the Yb-doped BiFeO
3
thin films showed the distortion of rhombohedral structure. Scanning electron microscopy indicated that the Yb-doped BiFeO
3
thin film prepared at the 11 W condition exhibited smaller grain sizes than those of the other conditions. Atomic force microscopy revealed that the Yb-doped BiFeO
3
thin film treated at the 11 W condition featured a lower surface roughness compared with the other conditions. Secondary ion mass spectrometry manifested that the Yb-doped BiFeO
3
film showed the sharp compositional profiles near the BiFeO
3
/Pt interface. Moreover, X-ray photoelectron spectroscopy signified that the Yb-doped BiFeO
3
film fabricated at the 11 W condition possessed a higher Fe
3+
/Fe
2+
concentration ratio and a lower intensity of oxygen vacancies than the other conditions. Among these conditions, the BiFeO
3
thin film fabricated at the 11 W condition exhibited the lowest leakage current of 1.71 × 10
–5
A/cm
2
at an electric field of 200 kV/cm and the highest remnant polarization of 61.7 μC/cm
2
.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-022-05652-4</doi><orcidid>https://orcid.org/0000-0002-1013-2571</orcidid></addata></record> |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Applied physics Atomic force microscopy Characterization and Evaluation of Materials Condensed Matter Physics Electric fields Ferroelectric materials Ferroelectricity Grain size Leakage current Machines Manufacturing Materials science Microscopy Nanotechnology Optical and Electronic Materials Photoelectrons Physics Physics and Astronomy Processes Secondary ion mass spectrometry Silicon substrates Surface roughness Surfaces and Interfaces Thin Films |
| title | Impact of Yb content on structural properties and ferroelectric characteristics of BiFeO3 thin films on Pt/TiN/Si substrates |
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