Study of GaN thin layers subjected to high-temperature rapid thermal annealing
A detailed study of the effect of rapid thermal annealing in a N2 or Ar atmosphere on the properties of thin GaN layers grown by molecular-beam epitaxy on sapphire substrates was performed. After rapid thermal annealing, an enhancement of the crystal quality of such films was observed. Low-temperatu...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 1998-10, Vol.32 (10), p.1048-1053 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Katsavets, N. I. Laws, G. M. Harrison, I. Larkins, E. C. Benson, T. M. Cheng, T. S. Foxon, C. T. |
| description | A detailed study of the effect of rapid thermal annealing in a N2 or Ar atmosphere on the properties of thin GaN layers grown by molecular-beam epitaxy on sapphire substrates was performed. After rapid thermal annealing, an enhancement of the crystal quality of such films was observed. Low-temperature photoluminescence measurements revealed a substantial increase in impurity recombination near the fundamental absorption edge after a rapid high-temperature anneal in a nitrogen atmosphere. A significant decrease in the impurity photoluminescence of the GaN films with protective SiO2 coatings was observed following the anneals. |
| doi_str_mv | 10.1134/1.1187579 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2665617964</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2665617964</sourcerecordid><originalsourceid>FETCH-LOGICAL-c255t-806b3fac85aac86e62242d4ea6f5b1123b9064d400da174bd8233daf9a4cb7e23</originalsourceid><addsrcrecordid>eNotkE9Lw0AUxBdRsFYPfoMFTx6i-3-ToxStQqkH9by8ZF-alDSJu5tDv70p9fLmwfyYgSHknrMnzqV65rPkVtvigiw4K1hmlC0uT7-Rmc2FuSY3Me4ZmzGtFmT7lSZ_pENN17ClqWl72sERQ6RxKvdYJfQ0DbRpd02W8DBigDQFpAHGdnYaDAfoKPQ9Qtf2u1tyVUMX8e5fl-Tn7fV79Z5tPtcfq5dNVgmtU5YzU8oaqlzDfAwaIZTwCsHUuuRcyLJgRnnFmAduVelzIaWHugBVlRaFXJKHc-4Yht8JY3L7YQr9XOmEMdpwWxg1U49nqgpDjAFrN4b2AOHoOHOnuRx3_3PJP_zkXC4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2665617964</pqid></control><display><type>article</type><title>Study of GaN thin layers subjected to high-temperature rapid thermal annealing</title><source>SpringerLink Journals</source><creator>Katsavets, N. I. ; Laws, G. M. ; Harrison, I. ; Larkins, E. C. ; Benson, T. M. ; Cheng, T. S. ; Foxon, C. T.</creator><creatorcontrib>Katsavets, N. I. ; Laws, G. M. ; Harrison, I. ; Larkins, E. C. ; Benson, T. M. ; Cheng, T. S. ; Foxon, C. T.</creatorcontrib><description>A detailed study of the effect of rapid thermal annealing in a N2 or Ar atmosphere on the properties of thin GaN layers grown by molecular-beam epitaxy on sapphire substrates was performed. After rapid thermal annealing, an enhancement of the crystal quality of such films was observed. Low-temperature photoluminescence measurements revealed a substantial increase in impurity recombination near the fundamental absorption edge after a rapid high-temperature anneal in a nitrogen atmosphere. A significant decrease in the impurity photoluminescence of the GaN films with protective SiO2 coatings was observed following the anneals.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/1.1187579</identifier><language>eng</language><publisher>New York: Springer Nature B.V</publisher><subject>Annealing ; Epitaxial growth ; Gallium nitrides ; High temperature ; Impurities ; Low temperature ; Molecular beam epitaxy ; Photoluminescence ; Protective coatings ; Radioactivity ; Sapphire ; Silicon dioxide ; Substrates ; Thin films</subject><ispartof>Semiconductors (Woodbury, N.Y.), 1998-10, Vol.32 (10), p.1048-1053</ispartof><rights>American Institute of Physics 1998.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c255t-806b3fac85aac86e62242d4ea6f5b1123b9064d400da174bd8233daf9a4cb7e23</citedby><cites>FETCH-LOGICAL-c255t-806b3fac85aac86e62242d4ea6f5b1123b9064d400da174bd8233daf9a4cb7e23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Katsavets, N. I.</creatorcontrib><creatorcontrib>Laws, G. M.</creatorcontrib><creatorcontrib>Harrison, I.</creatorcontrib><creatorcontrib>Larkins, E. C.</creatorcontrib><creatorcontrib>Benson, T. M.</creatorcontrib><creatorcontrib>Cheng, T. S.</creatorcontrib><creatorcontrib>Foxon, C. T.</creatorcontrib><title>Study of GaN thin layers subjected to high-temperature rapid thermal annealing</title><title>Semiconductors (Woodbury, N.Y.)</title><description>A detailed study of the effect of rapid thermal annealing in a N2 or Ar atmosphere on the properties of thin GaN layers grown by molecular-beam epitaxy on sapphire substrates was performed. After rapid thermal annealing, an enhancement of the crystal quality of such films was observed. Low-temperature photoluminescence measurements revealed a substantial increase in impurity recombination near the fundamental absorption edge after a rapid high-temperature anneal in a nitrogen atmosphere. A significant decrease in the impurity photoluminescence of the GaN films with protective SiO2 coatings was observed following the anneals.</description><subject>Annealing</subject><subject>Epitaxial growth</subject><subject>Gallium nitrides</subject><subject>High temperature</subject><subject>Impurities</subject><subject>Low temperature</subject><subject>Molecular beam epitaxy</subject><subject>Photoluminescence</subject><subject>Protective coatings</subject><subject>Radioactivity</subject><subject>Sapphire</subject><subject>Silicon dioxide</subject><subject>Substrates</subject><subject>Thin films</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNotkE9Lw0AUxBdRsFYPfoMFTx6i-3-ToxStQqkH9by8ZF-alDSJu5tDv70p9fLmwfyYgSHknrMnzqV65rPkVtvigiw4K1hmlC0uT7-Rmc2FuSY3Me4ZmzGtFmT7lSZ_pENN17ClqWl72sERQ6RxKvdYJfQ0DbRpd02W8DBigDQFpAHGdnYaDAfoKPQ9Qtf2u1tyVUMX8e5fl-Tn7fV79Z5tPtcfq5dNVgmtU5YzU8oaqlzDfAwaIZTwCsHUuuRcyLJgRnnFmAduVelzIaWHugBVlRaFXJKHc-4Yht8JY3L7YQr9XOmEMdpwWxg1U49nqgpDjAFrN4b2AOHoOHOnuRx3_3PJP_zkXC4</recordid><startdate>19981001</startdate><enddate>19981001</enddate><creator>Katsavets, N. I.</creator><creator>Laws, G. M.</creator><creator>Harrison, I.</creator><creator>Larkins, E. C.</creator><creator>Benson, T. M.</creator><creator>Cheng, T. S.</creator><creator>Foxon, C. T.</creator><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19981001</creationdate><title>Study of GaN thin layers subjected to high-temperature rapid thermal annealing</title><author>Katsavets, N. I. ; Laws, G. M. ; Harrison, I. ; Larkins, E. C. ; Benson, T. M. ; Cheng, T. S. ; Foxon, C. T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c255t-806b3fac85aac86e62242d4ea6f5b1123b9064d400da174bd8233daf9a4cb7e23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Annealing</topic><topic>Epitaxial growth</topic><topic>Gallium nitrides</topic><topic>High temperature</topic><topic>Impurities</topic><topic>Low temperature</topic><topic>Molecular beam epitaxy</topic><topic>Photoluminescence</topic><topic>Protective coatings</topic><topic>Radioactivity</topic><topic>Sapphire</topic><topic>Silicon dioxide</topic><topic>Substrates</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Katsavets, N. I.</creatorcontrib><creatorcontrib>Laws, G. M.</creatorcontrib><creatorcontrib>Harrison, I.</creatorcontrib><creatorcontrib>Larkins, E. C.</creatorcontrib><creatorcontrib>Benson, T. M.</creatorcontrib><creatorcontrib>Cheng, T. S.</creatorcontrib><creatorcontrib>Foxon, C. T.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Katsavets, N. I.</au><au>Laws, G. M.</au><au>Harrison, I.</au><au>Larkins, E. C.</au><au>Benson, T. M.</au><au>Cheng, T. S.</au><au>Foxon, C. T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of GaN thin layers subjected to high-temperature rapid thermal annealing</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>1998-10-01</date><risdate>1998</risdate><volume>32</volume><issue>10</issue><spage>1048</spage><epage>1053</epage><pages>1048-1053</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>A detailed study of the effect of rapid thermal annealing in a N2 or Ar atmosphere on the properties of thin GaN layers grown by molecular-beam epitaxy on sapphire substrates was performed. After rapid thermal annealing, an enhancement of the crystal quality of such films was observed. Low-temperature photoluminescence measurements revealed a substantial increase in impurity recombination near the fundamental absorption edge after a rapid high-temperature anneal in a nitrogen atmosphere. A significant decrease in the impurity photoluminescence of the GaN films with protective SiO2 coatings was observed following the anneals.</abstract><cop>New York</cop><pub>Springer Nature B.V</pub><doi>10.1134/1.1187579</doi><tpages>6</tpages></addata></record> |
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| ispartof | Semiconductors (Woodbury, N.Y.), 1998-10, Vol.32 (10), p.1048-1053 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_proquest_journals_2665617964 |
| source | SpringerLink Journals |
| subjects | Annealing Epitaxial growth Gallium nitrides High temperature Impurities Low temperature Molecular beam epitaxy Photoluminescence Protective coatings Radioactivity Sapphire Silicon dioxide Substrates Thin films |
| title | Study of GaN thin layers subjected to high-temperature rapid thermal annealing |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T11%3A32%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Study%20of%20GaN%20thin%20layers%20subjected%20to%20high-temperature%20rapid%20thermal%20annealing&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Katsavets,%20N.%20I.&rft.date=1998-10-01&rft.volume=32&rft.issue=10&rft.spage=1048&rft.epage=1053&rft.pages=1048-1053&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/1.1187579&rft_dat=%3Cproquest_cross%3E2665617964%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2665617964&rft_id=info:pmid/&rfr_iscdi=true |