The optimization of the double mask system to minimize the contact resistance of a Ti/Pt/Au contact
The fabrication of Ti/Pt/Au ohmic contacts on diamond using two transmission line model masks during the photolithography step was modified as a result of the adverse effects on the resistance from the rectifying lip created by the overlap of the two masks, and the possible inhibition of carbide for...
Gespeichert in:
| Veröffentlicht in: | Journal of electronic materials 1997-02, Vol.26 (2), p.90-96 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 96 |
|---|---|
| container_issue | 2 |
| container_start_page | 90 |
| container_title | Journal of electronic materials |
| container_volume | 26 |
| creator | WAYTENA, G. L HOFF, H. A ISAACSON, I. P REBBERT, M. L MA, D. I MARRIAN, C SUEHLE, J. S |
| description | The fabrication of Ti/Pt/Au ohmic contacts on diamond using two transmission line model masks during the photolithography step was modified as a result of the adverse effects on the resistance from the rectifying lip created by the overlap of the two masks, and the possible inhibition of carbide formation due to the presence of oxygen on the diamond surface before metallization. The first modification consisted of decreasing the rectifying lip by diffusing a small amount of Ti from beneath the contact defined by the first mask, and decreasing the overlap of the two masks from 5 to 2 μm, which is close to the minimum allowable by our photolithography techniques. The second modification consisted of the desorption of oxygen from the diamond surface using a heat treatment in vacuum and cool down in purified hydrogen. As a result of these changes, the contact resistance was decreased by more than two orders of magnitude from 8.1 × 10-2 Ω-cm2 to 1.2 × 10-4 Ω-cm2. |
| doi_str_mv | 10.1007/s11664-997-0094-8 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2664698635</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>11681561</sourcerecordid><originalsourceid>FETCH-LOGICAL-c354t-b45522ceff5acb3fac5317dbe07896b98db1b08e608508d59cde170ac3e9fb203</originalsourceid><addsrcrecordid>eNqFkU1LxDAQhoMouK7-AG9BvdbNJE2THJfFL1jQwwreQpKm2HXbrE16WH-9ravexNPA8LzvwDwInQO5BkLELAIURZ4pJTJCVJ7JAzQBnrMMZPFyiCaEFZBxyvgxOolxTQhwkDBBbvXqcdimuqk_TKpDi0OF07ArQ283HjcmvuG4i8k3OAXc1O1I-i_EhTYZl3DnYx2TaZ0fwwav6tlTms37H-AUHVVmE_3Z95yi59ub1eI-Wz7ePSzmy8wxnqfM5pxT6nxVceMsq4zjDERpPRFSFVbJ0oIl0hdEciJLrlzpQRDjmFeVpYRN0eW-d9uF997HpNeh79rhpKbDcwolC8YH6uJPiuRSUMHof1AuhIIBgj3kuhBj5yu97erGdDsNRI9W9N6KHqzo0YqWQ-bqu9hEZzZVN7ytjr9BygUDlbNPJcWLqQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>204847791</pqid></control><display><type>article</type><title>The optimization of the double mask system to minimize the contact resistance of a Ti/Pt/Au contact</title><source>SpringerLink Journals - AutoHoldings</source><creator>WAYTENA, G. L ; HOFF, H. A ; ISAACSON, I. P ; REBBERT, M. L ; MA, D. I ; MARRIAN, C ; SUEHLE, J. S</creator><creatorcontrib>WAYTENA, G. L ; HOFF, H. A ; ISAACSON, I. P ; REBBERT, M. L ; MA, D. I ; MARRIAN, C ; SUEHLE, J. S</creatorcontrib><description>The fabrication of Ti/Pt/Au ohmic contacts on diamond using two transmission line model masks during the photolithography step was modified as a result of the adverse effects on the resistance from the rectifying lip created by the overlap of the two masks, and the possible inhibition of carbide formation due to the presence of oxygen on the diamond surface before metallization. The first modification consisted of decreasing the rectifying lip by diffusing a small amount of Ti from beneath the contact defined by the first mask, and decreasing the overlap of the two masks from 5 to 2 μm, which is close to the minimum allowable by our photolithography techniques. The second modification consisted of the desorption of oxygen from the diamond surface using a heat treatment in vacuum and cool down in purified hydrogen. As a result of these changes, the contact resistance was decreased by more than two orders of magnitude from 8.1 × 10-2 Ω-cm2 to 1.2 × 10-4 Ω-cm2.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-997-0094-8</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Contact resistance ; Diamonds ; Electronics ; Exact sciences and technology ; Gold ; Heat treatment ; Masks ; Metallizing ; Microelectronic fabrication (materials and surfaces technology) ; Optimization ; Oxygen ; Photolithography ; Platinum ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Titanium ; Transmission lines</subject><ispartof>Journal of electronic materials, 1997-02, Vol.26 (2), p.90-96</ispartof><rights>1997 INIST-CNRS</rights><rights>Copyright Minerals, Metals & Materials Society Feb 1997</rights><rights>The Metallurgical of Society of AIME 1997.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-b45522ceff5acb3fac5317dbe07896b98db1b08e608508d59cde170ac3e9fb203</citedby><cites>FETCH-LOGICAL-c354t-b45522ceff5acb3fac5317dbe07896b98db1b08e608508d59cde170ac3e9fb203</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2573194$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>WAYTENA, G. L</creatorcontrib><creatorcontrib>HOFF, H. A</creatorcontrib><creatorcontrib>ISAACSON, I. P</creatorcontrib><creatorcontrib>REBBERT, M. L</creatorcontrib><creatorcontrib>MA, D. I</creatorcontrib><creatorcontrib>MARRIAN, C</creatorcontrib><creatorcontrib>SUEHLE, J. S</creatorcontrib><title>The optimization of the double mask system to minimize the contact resistance of a Ti/Pt/Au contact</title><title>Journal of electronic materials</title><description>The fabrication of Ti/Pt/Au ohmic contacts on diamond using two transmission line model masks during the photolithography step was modified as a result of the adverse effects on the resistance from the rectifying lip created by the overlap of the two masks, and the possible inhibition of carbide formation due to the presence of oxygen on the diamond surface before metallization. The first modification consisted of decreasing the rectifying lip by diffusing a small amount of Ti from beneath the contact defined by the first mask, and decreasing the overlap of the two masks from 5 to 2 μm, which is close to the minimum allowable by our photolithography techniques. The second modification consisted of the desorption of oxygen from the diamond surface using a heat treatment in vacuum and cool down in purified hydrogen. As a result of these changes, the contact resistance was decreased by more than two orders of magnitude from 8.1 × 10-2 Ω-cm2 to 1.2 × 10-4 Ω-cm2.</description><subject>Applied sciences</subject><subject>Contact resistance</subject><subject>Diamonds</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gold</subject><subject>Heat treatment</subject><subject>Masks</subject><subject>Metallizing</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Optimization</subject><subject>Oxygen</subject><subject>Photolithography</subject><subject>Platinum</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Titanium</subject><subject>Transmission lines</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNqFkU1LxDAQhoMouK7-AG9BvdbNJE2THJfFL1jQwwreQpKm2HXbrE16WH-9ravexNPA8LzvwDwInQO5BkLELAIURZ4pJTJCVJ7JAzQBnrMMZPFyiCaEFZBxyvgxOolxTQhwkDBBbvXqcdimuqk_TKpDi0OF07ArQ283HjcmvuG4i8k3OAXc1O1I-i_EhTYZl3DnYx2TaZ0fwwav6tlTms37H-AUHVVmE_3Z95yi59ub1eI-Wz7ePSzmy8wxnqfM5pxT6nxVceMsq4zjDERpPRFSFVbJ0oIl0hdEciJLrlzpQRDjmFeVpYRN0eW-d9uF997HpNeh79rhpKbDcwolC8YH6uJPiuRSUMHof1AuhIIBgj3kuhBj5yu97erGdDsNRI9W9N6KHqzo0YqWQ-bqu9hEZzZVN7ytjr9BygUDlbNPJcWLqQ</recordid><startdate>19970201</startdate><enddate>19970201</enddate><creator>WAYTENA, G. L</creator><creator>HOFF, H. A</creator><creator>ISAACSON, I. P</creator><creator>REBBERT, M. L</creator><creator>MA, D. I</creator><creator>MARRIAN, C</creator><creator>SUEHLE, J. S</creator><general>Institute of Electrical and Electronics Engineers</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><scope>PRINS</scope></search><sort><creationdate>19970201</creationdate><title>The optimization of the double mask system to minimize the contact resistance of a Ti/Pt/Au contact</title><author>WAYTENA, G. L ; HOFF, H. A ; ISAACSON, I. P ; REBBERT, M. L ; MA, D. I ; MARRIAN, C ; SUEHLE, J. S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-b45522ceff5acb3fac5317dbe07896b98db1b08e608508d59cde170ac3e9fb203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Applied sciences</topic><topic>Contact resistance</topic><topic>Diamonds</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gold</topic><topic>Heat treatment</topic><topic>Masks</topic><topic>Metallizing</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Optimization</topic><topic>Oxygen</topic><topic>Photolithography</topic><topic>Platinum</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Titanium</topic><topic>Transmission lines</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>WAYTENA, G. L</creatorcontrib><creatorcontrib>HOFF, H. A</creatorcontrib><creatorcontrib>ISAACSON, I. P</creatorcontrib><creatorcontrib>REBBERT, M. L</creatorcontrib><creatorcontrib>MA, D. I</creatorcontrib><creatorcontrib>MARRIAN, C</creatorcontrib><creatorcontrib>SUEHLE, J. S</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><collection>ProQuest Central China</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WAYTENA, G. L</au><au>HOFF, H. A</au><au>ISAACSON, I. P</au><au>REBBERT, M. L</au><au>MA, D. I</au><au>MARRIAN, C</au><au>SUEHLE, J. S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The optimization of the double mask system to minimize the contact resistance of a Ti/Pt/Au contact</atitle><jtitle>Journal of electronic materials</jtitle><date>1997-02-01</date><risdate>1997</risdate><volume>26</volume><issue>2</issue><spage>90</spage><epage>96</epage><pages>90-96</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>The fabrication of Ti/Pt/Au ohmic contacts on diamond using two transmission line model masks during the photolithography step was modified as a result of the adverse effects on the resistance from the rectifying lip created by the overlap of the two masks, and the possible inhibition of carbide formation due to the presence of oxygen on the diamond surface before metallization. The first modification consisted of decreasing the rectifying lip by diffusing a small amount of Ti from beneath the contact defined by the first mask, and decreasing the overlap of the two masks from 5 to 2 μm, which is close to the minimum allowable by our photolithography techniques. The second modification consisted of the desorption of oxygen from the diamond surface using a heat treatment in vacuum and cool down in purified hydrogen. As a result of these changes, the contact resistance was decreased by more than two orders of magnitude from 8.1 × 10-2 Ω-cm2 to 1.2 × 10-4 Ω-cm2.</abstract><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1007/s11664-997-0094-8</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 1997-02, Vol.26 (2), p.90-96 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_proquest_journals_2664698635 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Applied sciences Contact resistance Diamonds Electronics Exact sciences and technology Gold Heat treatment Masks Metallizing Microelectronic fabrication (materials and surfaces technology) Optimization Oxygen Photolithography Platinum Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Titanium Transmission lines |
| title | The optimization of the double mask system to minimize the contact resistance of a Ti/Pt/Au contact |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T09%3A14%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20optimization%20of%20the%20double%20mask%20system%20to%20minimize%20the%20contact%20resistance%20of%20a%20Ti/Pt/Au%20contact&rft.jtitle=Journal%20of%20electronic%20materials&rft.au=WAYTENA,%20G.%20L&rft.date=1997-02-01&rft.volume=26&rft.issue=2&rft.spage=90&rft.epage=96&rft.pages=90-96&rft.issn=0361-5235&rft.eissn=1543-186X&rft.coden=JECMA5&rft_id=info:doi/10.1007/s11664-997-0094-8&rft_dat=%3Cproquest_cross%3E11681561%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=204847791&rft_id=info:pmid/&rfr_iscdi=true |