A low-noise cryogenically-cooled 8-12 GHz HEMT amplifier for future space applications
A two-stage 8–12 GHz (X-band) cryogenically-cooled Low-Noise Amplifier (LNA) has been developed with a commercial pseudomorphic HEMT on AsGa substrate. In a first step, different commercial transistors have been fully characterized from 300 K to 20 K using a new method to measure the four noise para...
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| Veröffentlicht in: | International journal of infrared and millimeter waves 1997, Vol.18 (1), p.85-99 |
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| container_title | International journal of infrared and millimeter waves |
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| creator | BOUTEZ, C CROZAT, P DANELON, V CHAUBET, M FEBVRE, P BEAUDIN, G |
| description | A two-stage 8–12 GHz (X-band) cryogenically-cooled Low-Noise Amplifier (LNA) has been developed with a commercial pseudomorphic HEMT on AsGa substrate. In a first step, different commercial transistors have been fully characterized from 300 K to 20 K using a new method to measure the four noise parameters. Preliminary results have allowed the selection of the best device. This enabled the design of the two-stage LNA with the help of a microwave CAD software.In a second step, the LNA has been characterized at 300 K, 30 K and 4 K. As the physical temperature decreased from 300 K to 30 K, the LNA exhibited an average gain increase of 2 dB and as much as a fourfold reduction of noise temperature. A noise figure of 22.5 K and a gain of 23 dB have been achieved at 30 K around 10 GHz. The noise temperature has been furthermore reduced to 20 K by cooling the amplifier at the liquid helium temperature (4.2 K). Different methods to measure the noise characteristics of the amplifier are widely developed in this paper. |
| doi_str_mv | 10.1007/BF02677898 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_proquest_journals_2664668867</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2664668867</sourcerecordid><originalsourceid>FETCH-LOGICAL-c320t-1c21a9419daa6f3ba60d50e6c65ec9490ea12ee41ff4bf256f151947c035a80a3</originalsourceid><addsrcrecordid>eNpFkE1LxDAQhoMouK5e_AUBvShUJ2k-muMq61ZY8bJ6LWM20UptatIq66-3sqKHYWDmmYfhJeSYwQUD0JdXN8CV1oUpdsiESc0zI6XZJRNgRmaGa7ZPDlJ6BQCjCz0hjzPahM-sDXVy1MZNeHZtbbFpNpkNoXFrWmSM00X5Rcv53YriW9fUvnaR-jDW0A_R0dShdRS7cWWxr0ObDsmexya5o98-JQ8389V1mS3vF7fXs2Vmcw59xixnaAQza0Tl8ydUsJbglFXSWSMMOGTcOcG8F0-eS-WZZEZoC7nEAjCfkrOt9wWbqov1G8ZNFbCuytmy-pmBMNxoEB9sZE-2bBfD--BSX72GIbbjexVXSihVFEqP1PmWsjGkFJ3_0zKofjKu_jMe4dNfJaYxNB-xtXX6u-BSCyN5_g01bHiU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2664668867</pqid></control><display><type>article</type><title>A low-noise cryogenically-cooled 8-12 GHz HEMT amplifier for future space applications</title><source>Springer Nature - Complete Springer Journals</source><creator>BOUTEZ, C ; CROZAT, P ; DANELON, V ; CHAUBET, M ; FEBVRE, P ; BEAUDIN, G</creator><creatorcontrib>BOUTEZ, C ; CROZAT, P ; DANELON, V ; CHAUBET, M ; FEBVRE, P ; BEAUDIN, G</creatorcontrib><description>A two-stage 8–12 GHz (X-band) cryogenically-cooled Low-Noise Amplifier (LNA) has been developed with a commercial pseudomorphic HEMT on AsGa substrate. In a first step, different commercial transistors have been fully characterized from 300 K to 20 K using a new method to measure the four noise parameters. Preliminary results have allowed the selection of the best device. This enabled the design of the two-stage LNA with the help of a microwave CAD software.In a second step, the LNA has been characterized at 300 K, 30 K and 4 K. As the physical temperature decreased from 300 K to 30 K, the LNA exhibited an average gain increase of 2 dB and as much as a fourfold reduction of noise temperature. A noise figure of 22.5 K and a gain of 23 dB have been achieved at 30 K around 10 GHz. The noise temperature has been furthermore reduced to 20 K by cooling the amplifier at the liquid helium temperature (4.2 K). Different methods to measure the noise characteristics of the amplifier are widely developed in this paper.</description><identifier>ISSN: 0195-9271</identifier><identifier>ISSN: 1866-6892</identifier><identifier>EISSN: 1572-9559</identifier><identifier>EISSN: 1866-6906</identifier><identifier>DOI: 10.1007/BF02677898</identifier><identifier>CODEN: IJIWDO</identifier><language>eng</language><publisher>New York, NY: Kluwer Academic/Plenum</publisher><subject>Amplifiers ; Applied sciences ; Astrophysics ; Circuit properties ; Electric, optical and optoelectronic circuits ; Electronics ; Engineering Sciences ; Exact sciences and technology ; High electron mobility transistors ; Instrumentation and Methods for Astrophysic ; Liquid helium ; Micro and nanotechnologies ; Microelectronics ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Noise measurement ; Noise temperature ; Sciences of the Universe ; Space applications ; Substrates ; Superhigh frequencies</subject><ispartof>International journal of infrared and millimeter waves, 1997, Vol.18 (1), p.85-99</ispartof><rights>1997 INIST-CNRS</rights><rights>Plenum Publishing Corporation 1997.</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-1c21a9419daa6f3ba60d50e6c65ec9490ea12ee41ff4bf256f151947c035a80a3</citedby><cites>FETCH-LOGICAL-c320t-1c21a9419daa6f3ba60d50e6c65ec9490ea12ee41ff4bf256f151947c035a80a3</cites><orcidid>0000-0002-9302-0419</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2574952$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://cnrs.hal.science/hal-04929704$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>BOUTEZ, C</creatorcontrib><creatorcontrib>CROZAT, P</creatorcontrib><creatorcontrib>DANELON, V</creatorcontrib><creatorcontrib>CHAUBET, M</creatorcontrib><creatorcontrib>FEBVRE, P</creatorcontrib><creatorcontrib>BEAUDIN, G</creatorcontrib><title>A low-noise cryogenically-cooled 8-12 GHz HEMT amplifier for future space applications</title><title>International journal of infrared and millimeter waves</title><description>A two-stage 8–12 GHz (X-band) cryogenically-cooled Low-Noise Amplifier (LNA) has been developed with a commercial pseudomorphic HEMT on AsGa substrate. In a first step, different commercial transistors have been fully characterized from 300 K to 20 K using a new method to measure the four noise parameters. Preliminary results have allowed the selection of the best device. This enabled the design of the two-stage LNA with the help of a microwave CAD software.In a second step, the LNA has been characterized at 300 K, 30 K and 4 K. As the physical temperature decreased from 300 K to 30 K, the LNA exhibited an average gain increase of 2 dB and as much as a fourfold reduction of noise temperature. A noise figure of 22.5 K and a gain of 23 dB have been achieved at 30 K around 10 GHz. The noise temperature has been furthermore reduced to 20 K by cooling the amplifier at the liquid helium temperature (4.2 K). Different methods to measure the noise characteristics of the amplifier are widely developed in this paper.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Astrophysics</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Engineering Sciences</subject><subject>Exact sciences and technology</subject><subject>High electron mobility transistors</subject><subject>Instrumentation and Methods for Astrophysic</subject><subject>Liquid helium</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Noise measurement</subject><subject>Noise temperature</subject><subject>Sciences of the Universe</subject><subject>Space applications</subject><subject>Substrates</subject><subject>Superhigh frequencies</subject><issn>0195-9271</issn><issn>1866-6892</issn><issn>1572-9559</issn><issn>1866-6906</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNpFkE1LxDAQhoMouK5e_AUBvShUJ2k-muMq61ZY8bJ6LWM20UptatIq66-3sqKHYWDmmYfhJeSYwQUD0JdXN8CV1oUpdsiESc0zI6XZJRNgRmaGa7ZPDlJ6BQCjCz0hjzPahM-sDXVy1MZNeHZtbbFpNpkNoXFrWmSM00X5Rcv53YriW9fUvnaR-jDW0A_R0dShdRS7cWWxr0ObDsmexya5o98-JQ8389V1mS3vF7fXs2Vmcw59xixnaAQza0Tl8ydUsJbglFXSWSMMOGTcOcG8F0-eS-WZZEZoC7nEAjCfkrOt9wWbqov1G8ZNFbCuytmy-pmBMNxoEB9sZE-2bBfD--BSX72GIbbjexVXSihVFEqP1PmWsjGkFJ3_0zKofjKu_jMe4dNfJaYxNB-xtXX6u-BSCyN5_g01bHiU</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>BOUTEZ, C</creator><creator>CROZAT, P</creator><creator>DANELON, V</creator><creator>CHAUBET, M</creator><creator>FEBVRE, P</creator><creator>BEAUDIN, G</creator><general>Kluwer Academic/Plenum</general><general>Springer Nature B.V</general><general>Springer Verlag</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>P5Z</scope><scope>P62</scope><scope>PHGZM</scope><scope>PHGZT</scope><scope>PKEHL</scope><scope>PQEST</scope><scope>PQGLB</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0002-9302-0419</orcidid></search><sort><creationdate>1997</creationdate><title>A low-noise cryogenically-cooled 8-12 GHz HEMT amplifier for future space applications</title><author>BOUTEZ, C ; CROZAT, P ; DANELON, V ; CHAUBET, M ; FEBVRE, P ; BEAUDIN, G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-1c21a9419daa6f3ba60d50e6c65ec9490ea12ee41ff4bf256f151947c035a80a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Astrophysics</topic><topic>Circuit properties</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Engineering Sciences</topic><topic>Exact sciences and technology</topic><topic>High electron mobility transistors</topic><topic>Instrumentation and Methods for Astrophysic</topic><topic>Liquid helium</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Noise measurement</topic><topic>Noise temperature</topic><topic>Sciences of the Universe</topic><topic>Space applications</topic><topic>Substrates</topic><topic>Superhigh frequencies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BOUTEZ, C</creatorcontrib><creatorcontrib>CROZAT, P</creatorcontrib><creatorcontrib>DANELON, V</creatorcontrib><creatorcontrib>CHAUBET, M</creatorcontrib><creatorcontrib>FEBVRE, P</creatorcontrib><creatorcontrib>BEAUDIN, G</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central (New)</collection><collection>ProQuest One Academic (New)</collection><collection>ProQuest One Academic Middle East (New)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Applied & Life Sciences</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>International journal of infrared and millimeter waves</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BOUTEZ, C</au><au>CROZAT, P</au><au>DANELON, V</au><au>CHAUBET, M</au><au>FEBVRE, P</au><au>BEAUDIN, G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A low-noise cryogenically-cooled 8-12 GHz HEMT amplifier for future space applications</atitle><jtitle>International journal of infrared and millimeter waves</jtitle><date>1997</date><risdate>1997</risdate><volume>18</volume><issue>1</issue><spage>85</spage><epage>99</epage><pages>85-99</pages><issn>0195-9271</issn><issn>1866-6892</issn><eissn>1572-9559</eissn><eissn>1866-6906</eissn><coden>IJIWDO</coden><abstract>A two-stage 8–12 GHz (X-band) cryogenically-cooled Low-Noise Amplifier (LNA) has been developed with a commercial pseudomorphic HEMT on AsGa substrate. In a first step, different commercial transistors have been fully characterized from 300 K to 20 K using a new method to measure the four noise parameters. Preliminary results have allowed the selection of the best device. This enabled the design of the two-stage LNA with the help of a microwave CAD software.In a second step, the LNA has been characterized at 300 K, 30 K and 4 K. As the physical temperature decreased from 300 K to 30 K, the LNA exhibited an average gain increase of 2 dB and as much as a fourfold reduction of noise temperature. A noise figure of 22.5 K and a gain of 23 dB have been achieved at 30 K around 10 GHz. The noise temperature has been furthermore reduced to 20 K by cooling the amplifier at the liquid helium temperature (4.2 K). Different methods to measure the noise characteristics of the amplifier are widely developed in this paper.</abstract><cop>New York, NY</cop><pub>Kluwer Academic/Plenum</pub><doi>10.1007/BF02677898</doi><tpages>15</tpages><orcidid>https://orcid.org/0000-0002-9302-0419</orcidid><oa>free_for_read</oa></addata></record> |
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| ispartof | International journal of infrared and millimeter waves, 1997, Vol.18 (1), p.85-99 |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Amplifiers Applied sciences Astrophysics Circuit properties Electric, optical and optoelectronic circuits Electronics Engineering Sciences Exact sciences and technology High electron mobility transistors Instrumentation and Methods for Astrophysic Liquid helium Micro and nanotechnologies Microelectronics Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Noise measurement Noise temperature Sciences of the Universe Space applications Substrates Superhigh frequencies |
| title | A low-noise cryogenically-cooled 8-12 GHz HEMT amplifier for future space applications |
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