Physical principles of laser simulation for the transient radiation response of semiconductor structures, active circuit elements, and circuits: A nonlinear model

The nonlinear interaction of Nd-laser radiation and silicon devices and ICs is discussed. It is shown that calculation of equivalent dose rate for laser intensities above 106 W cm−2 must take into account the variation of the linear absorption coefficient with excess-carrier density and the influence of Auger recombination on the carrier lifetime. It is established that accurate simulation of the transient response to intense irradiation requires simultaneous solution of the basic and optical-propagation equations written in at least two dimensions. A description is given of DIODE-2D, a program for 2D computer simulation of transient radiation response for semiconductor devices and ICs over wide ranges of dose rates and laser intensities. Computed equivalent dose rates are presented for silicon devices and ICs exposed to high-intensity laser radiation.