Electronic transport properties of Pb(Bi1−xSbx)2(Te1−ySey)4 topological insulator
A series of Pb(Bi1−xSbx)2(Te1−ySey)4 topological insulator crystals with various Sb molar ratios x and Se molar ratios y were fabricated, and their electronic transport properties were studied. Some of the millimeter-sized samples exhibited metallic behavior, while others exhibited semiconducting be...
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| Veröffentlicht in: | Journal of applied physics 2022-05, Vol.131 (18) |
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| creator | Tokumoto, Yuki Sugimoto, Kyoichi Hattori, Yuya Edagawa, Keiichi |
| description | A series of Pb(Bi1−xSbx)2(Te1−ySey)4 topological insulator crystals with various Sb molar ratios x and Se molar ratios y were fabricated, and their electronic transport properties were studied. Some of the millimeter-sized samples exhibited metallic behavior, while others exhibited semiconducting behavior with a resistivity as high as 48 mΩ cm at 2 K. In addition, Hall coefficients with a large variance were observed for samples from the same ingot, indicating spatial fluctuations in the composition and/or a nonuniform defect distribution. Then, micrometer-sized samples were cut from the millimeter-sized sample with the highest resistivity, and further electrical transport measurements were performed. Some of the micrometer-sized samples exhibited an even higher resistivity than that for the millimeter-sized sample. The magnetoresistance of the semiconducting micrometer-sized samples agreed well with a three-dimensional weak antilocalization/weak localization model in the low-temperature region below 20 K. |
| doi_str_mv | 10.1063/5.0077002 |
| format | Article |
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Some of the millimeter-sized samples exhibited metallic behavior, while others exhibited semiconducting behavior with a resistivity as high as 48 mΩ cm at 2 K. In addition, Hall coefficients with a large variance were observed for samples from the same ingot, indicating spatial fluctuations in the composition and/or a nonuniform defect distribution. Then, micrometer-sized samples were cut from the millimeter-sized sample with the highest resistivity, and further electrical transport measurements were performed. Some of the micrometer-sized samples exhibited an even higher resistivity than that for the millimeter-sized sample. The magnetoresistance of the semiconducting micrometer-sized samples agreed well with a three-dimensional weak antilocalization/weak localization model in the low-temperature region below 20 K.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0077002</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Electrical resistivity ; Electron transport ; Low temperature ; Magnetoresistance ; Magnetoresistivity ; Topological insulators ; Transport properties</subject><ispartof>Journal of applied physics, 2022-05, Vol.131 (18)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). 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Some of the millimeter-sized samples exhibited metallic behavior, while others exhibited semiconducting behavior with a resistivity as high as 48 mΩ cm at 2 K. In addition, Hall coefficients with a large variance were observed for samples from the same ingot, indicating spatial fluctuations in the composition and/or a nonuniform defect distribution. Then, micrometer-sized samples were cut from the millimeter-sized sample with the highest resistivity, and further electrical transport measurements were performed. Some of the micrometer-sized samples exhibited an even higher resistivity than that for the millimeter-sized sample. The magnetoresistance of the semiconducting micrometer-sized samples agreed well with a three-dimensional weak antilocalization/weak localization model in the low-temperature region below 20 K.</description><subject>Applied physics</subject><subject>Electrical resistivity</subject><subject>Electron transport</subject><subject>Low temperature</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Topological insulators</subject><subject>Transport properties</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNqd0M1KAzEQB_AgCtbqwTdY8NIKq8lm83XUUj-goND2HLLZRFLWzZqk0r6BZx_RJ3FLC949DTP8mBn-AFwieIMgxbfkBkLGICyOwABBLnJGCDwGg36Cci6YOAVnMa4gRIhjMQDLaWN0Cr51OktBtbHzIWVd8J0JyZmYeZu9VqN7h36-vjfzajMuRguza7Zzsx2XWfKdb_yb06rJXBvXjUo-nIMTq5poLg51CJYP08XkKZ-9PD5P7ma5xgVOuTBIIFVwTQypjKiMrakRjFS11tZUGCliIFXGKlIUrBY1twyVGnNWMgIrgofgar-3f_hjbWKSK78ObX9SFpQiyinlZa_Ge6WDjzEYK7vg3lXYSgTlLjVJ5CG13l7vbdQuqeR8-z_86cMflF1t8S-dbn0G</recordid><startdate>20220514</startdate><enddate>20220514</enddate><creator>Tokumoto, Yuki</creator><creator>Sugimoto, Kyoichi</creator><creator>Hattori, Yuya</creator><creator>Edagawa, Keiichi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-4518-1979</orcidid></search><sort><creationdate>20220514</creationdate><title>Electronic transport properties of Pb(Bi1−xSbx)2(Te1−ySey)4 topological insulator</title><author>Tokumoto, Yuki ; Sugimoto, Kyoichi ; Hattori, Yuya ; Edagawa, Keiichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-9e191a28c5e5be9befd6e975bdccfeb31a5e06aefa5227d9d8f714c3874750b53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Electrical resistivity</topic><topic>Electron transport</topic><topic>Low temperature</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Topological insulators</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tokumoto, Yuki</creatorcontrib><creatorcontrib>Sugimoto, Kyoichi</creatorcontrib><creatorcontrib>Hattori, Yuya</creatorcontrib><creatorcontrib>Edagawa, Keiichi</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tokumoto, Yuki</au><au>Sugimoto, Kyoichi</au><au>Hattori, Yuya</au><au>Edagawa, Keiichi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronic transport properties of Pb(Bi1−xSbx)2(Te1−ySey)4 topological insulator</atitle><jtitle>Journal of applied physics</jtitle><date>2022-05-14</date><risdate>2022</risdate><volume>131</volume><issue>18</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>A series of Pb(Bi1−xSbx)2(Te1−ySey)4 topological insulator crystals with various Sb molar ratios x and Se molar ratios y were fabricated, and their electronic transport properties were studied. Some of the millimeter-sized samples exhibited metallic behavior, while others exhibited semiconducting behavior with a resistivity as high as 48 mΩ cm at 2 K. In addition, Hall coefficients with a large variance were observed for samples from the same ingot, indicating spatial fluctuations in the composition and/or a nonuniform defect distribution. Then, micrometer-sized samples were cut from the millimeter-sized sample with the highest resistivity, and further electrical transport measurements were performed. Some of the micrometer-sized samples exhibited an even higher resistivity than that for the millimeter-sized sample. 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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Electrical resistivity Electron transport Low temperature Magnetoresistance Magnetoresistivity Topological insulators Transport properties |
| title | Electronic transport properties of Pb(Bi1−xSbx)2(Te1−ySey)4 topological insulator |
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