Al-doped ZnO thin films with excellent optoelectronic properties prepared using H2-assisted reactive magnetron sputtering at low temperatures for potential application in photovoltaic devices
Al-doped zinc oxide (AZO) thin films are deposited on glass substrate by RF magnetron sputtering under reactive plasma with different contents of hydrogen (H 2 ). Following optimized volume ratio of H 2 /(H 2 + Ar) in working gas for large area uniformity, working pressure, and substrate temperatur...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2022-05, Vol.33 (13), p.10267-10277 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Meng, Rutao Zhang, Shengli Guo, Hongling Sun, Yali Guo, Jiajia Ao, Jianping Liu, Wei Liu, Fangfang Zhang, Yi |
| description | Al-doped zinc oxide (AZO) thin films are deposited on glass substrate by RF magnetron sputtering under reactive plasma with different contents of hydrogen (H
2
). Following optimized volume ratio of H
2
/(H
2
+ Ar) in working gas for large area uniformity, working pressure, and substrate temperature effects are investigated systematically to achieve AZO:H film with excellent optoelectronic properties. The crystallization, sheet resistance, and Hall mobility of AZO:H film are enhanced with reducing working pressure. AZO:H films perform average transmittance of 90 ± 2% and sheet resistance of 16.5 ± 2.0 Ω/sq regardless of the substrate temperature as the sputtering process is combined with H
2
-assited sputtering deposition. As the substrate temperature is 150 °C, the prepared film is with the lowest resistivity of 6.0 × 10
− 4
Ω cm and large Hall mobility of ~ 37 cm
2
V
− 1
s
− 1
. With the optimization of AZO:H films, the efficiency of Cu
2
ZnSn(S,Se)
4
device is improved by 38% compared to the conventional preparation process. This offers incredible flexibility of substrate temperature selection for the application of AZO:H thin film as window layer in solar cells and other optoelectronic devices. |
| doi_str_mv | 10.1007/s10854-022-08015-0 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2660493536</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2660493536</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-792378fa899ec9c5e93e30a36a289fb47226102dc68c83dc1e600fe8779919043</originalsourceid><addsrcrecordid>eNp9kc2KFDEUhYMo2I6-gKuA6-hNUj_JchjUEQZmoyBuipi6NZ0hXYnJrR59unk107bgzlUu4Xzn_hzGXkt4KwHGd1WC6TsBSgkwIHsBT9hO9qMWnVFfn7Id2H4UXa_Uc_ai1nsAGDptduzxMoo5ZZz5t_WW0z6sfAnxUPlDoD3Hnx5jxJV4ypQwoqeS1uB5Lo0pFLC2ErMrzWCrYb3j10q4WkOl9lPQeQpH5Ad3t-IJ5TVvRFhOSkc8pgdOeGhWjrbSzJZUeE7UOgYXucs5Bu8oNLANlveJ0jFFcm2CGY_BY33Jni0uVnz1971gXz68_3x1LW5uP366urwRXktLYrRKj2Zxxlr01vdoNWpwenDK2OV7Nyo1SFCzH4w3evYSB4AFzThaKy10-oK9Ofu2zX9sWGm6T1tZW8tJDQN0Vvd6aCp1VvmSai24TLmEgyu_JgnTKajpHNTUgpr-BDVBg_QZqvl0Fyz_rP9D_Qb9eJul</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2660493536</pqid></control><display><type>article</type><title>Al-doped ZnO thin films with excellent optoelectronic properties prepared using H2-assisted reactive magnetron sputtering at low temperatures for potential application in photovoltaic devices</title><source>Springer Nature - Complete Springer Journals</source><creator>Meng, Rutao ; Zhang, Shengli ; Guo, Hongling ; Sun, Yali ; Guo, Jiajia ; Ao, Jianping ; Liu, Wei ; Liu, Fangfang ; Zhang, Yi</creator><creatorcontrib>Meng, Rutao ; Zhang, Shengli ; Guo, Hongling ; Sun, Yali ; Guo, Jiajia ; Ao, Jianping ; Liu, Wei ; Liu, Fangfang ; Zhang, Yi</creatorcontrib><description>Al-doped zinc oxide (AZO) thin films are deposited on glass substrate by RF magnetron sputtering under reactive plasma with different contents of hydrogen (H
2
). Following optimized volume ratio of H
2
/(H
2
+ Ar) in working gas for large area uniformity, working pressure, and substrate temperature effects are investigated systematically to achieve AZO:H film with excellent optoelectronic properties. The crystallization, sheet resistance, and Hall mobility of AZO:H film are enhanced with reducing working pressure. AZO:H films perform average transmittance of 90 ± 2% and sheet resistance of 16.5 ± 2.0 Ω/sq regardless of the substrate temperature as the sputtering process is combined with H
2
-assited sputtering deposition. As the substrate temperature is 150 °C, the prepared film is with the lowest resistivity of 6.0 × 10
− 4
Ω cm and large Hall mobility of ~ 37 cm
2
V
− 1
s
− 1
. With the optimization of AZO:H films, the efficiency of Cu
2
ZnSn(S,Se)
4
device is improved by 38% compared to the conventional preparation process. This offers incredible flexibility of substrate temperature selection for the application of AZO:H thin film as window layer in solar cells and other optoelectronic devices.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-022-08015-0</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Crystallization ; Electrical resistivity ; Electron mobility ; Glass substrates ; Hall effect ; Low temperature ; Magnetic properties ; Magnetron sputtering ; Materials Science ; Optical and Electronic Materials ; Optimization ; Optoelectronic devices ; Photovoltaic cells ; Pressure effects ; Solar cells ; Temperature effects ; Thin films ; Zinc oxide ; Zinc oxides</subject><ispartof>Journal of materials science. Materials in electronics, 2022-05, Vol.33 (13), p.10267-10277</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022</rights><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-792378fa899ec9c5e93e30a36a289fb47226102dc68c83dc1e600fe8779919043</citedby><cites>FETCH-LOGICAL-c319t-792378fa899ec9c5e93e30a36a289fb47226102dc68c83dc1e600fe8779919043</cites><orcidid>0000-0001-9083-0611</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-022-08015-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-022-08015-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,778,782,27907,27908,41471,42540,51302</link.rule.ids></links><search><creatorcontrib>Meng, Rutao</creatorcontrib><creatorcontrib>Zhang, Shengli</creatorcontrib><creatorcontrib>Guo, Hongling</creatorcontrib><creatorcontrib>Sun, Yali</creatorcontrib><creatorcontrib>Guo, Jiajia</creatorcontrib><creatorcontrib>Ao, Jianping</creatorcontrib><creatorcontrib>Liu, Wei</creatorcontrib><creatorcontrib>Liu, Fangfang</creatorcontrib><creatorcontrib>Zhang, Yi</creatorcontrib><title>Al-doped ZnO thin films with excellent optoelectronic properties prepared using H2-assisted reactive magnetron sputtering at low temperatures for potential application in photovoltaic devices</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Al-doped zinc oxide (AZO) thin films are deposited on glass substrate by RF magnetron sputtering under reactive plasma with different contents of hydrogen (H
2
). Following optimized volume ratio of H
2
/(H
2
+ Ar) in working gas for large area uniformity, working pressure, and substrate temperature effects are investigated systematically to achieve AZO:H film with excellent optoelectronic properties. The crystallization, sheet resistance, and Hall mobility of AZO:H film are enhanced with reducing working pressure. AZO:H films perform average transmittance of 90 ± 2% and sheet resistance of 16.5 ± 2.0 Ω/sq regardless of the substrate temperature as the sputtering process is combined with H
2
-assited sputtering deposition. As the substrate temperature is 150 °C, the prepared film is with the lowest resistivity of 6.0 × 10
− 4
Ω cm and large Hall mobility of ~ 37 cm
2
V
− 1
s
− 1
. With the optimization of AZO:H films, the efficiency of Cu
2
ZnSn(S,Se)
4
device is improved by 38% compared to the conventional preparation process. This offers incredible flexibility of substrate temperature selection for the application of AZO:H thin film as window layer in solar cells and other optoelectronic devices.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Crystallization</subject><subject>Electrical resistivity</subject><subject>Electron mobility</subject><subject>Glass substrates</subject><subject>Hall effect</subject><subject>Low temperature</subject><subject>Magnetic properties</subject><subject>Magnetron sputtering</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Optimization</subject><subject>Optoelectronic devices</subject><subject>Photovoltaic cells</subject><subject>Pressure effects</subject><subject>Solar cells</subject><subject>Temperature effects</subject><subject>Thin films</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kc2KFDEUhYMo2I6-gKuA6-hNUj_JchjUEQZmoyBuipi6NZ0hXYnJrR59unk107bgzlUu4Xzn_hzGXkt4KwHGd1WC6TsBSgkwIHsBT9hO9qMWnVFfn7Id2H4UXa_Uc_ai1nsAGDptduzxMoo5ZZz5t_WW0z6sfAnxUPlDoD3Hnx5jxJV4ypQwoqeS1uB5Lo0pFLC2ErMrzWCrYb3j10q4WkOl9lPQeQpH5Ad3t-IJ5TVvRFhOSkc8pgdOeGhWjrbSzJZUeE7UOgYXucs5Bu8oNLANlveJ0jFFcm2CGY_BY33Jni0uVnz1971gXz68_3x1LW5uP366urwRXktLYrRKj2Zxxlr01vdoNWpwenDK2OV7Nyo1SFCzH4w3evYSB4AFzThaKy10-oK9Ofu2zX9sWGm6T1tZW8tJDQN0Vvd6aCp1VvmSai24TLmEgyu_JgnTKajpHNTUgpr-BDVBg_QZqvl0Fyz_rP9D_Qb9eJul</recordid><startdate>20220501</startdate><enddate>20220501</enddate><creator>Meng, Rutao</creator><creator>Zhang, Shengli</creator><creator>Guo, Hongling</creator><creator>Sun, Yali</creator><creator>Guo, Jiajia</creator><creator>Ao, Jianping</creator><creator>Liu, Wei</creator><creator>Liu, Fangfang</creator><creator>Zhang, Yi</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0001-9083-0611</orcidid></search><sort><creationdate>20220501</creationdate><title>Al-doped ZnO thin films with excellent optoelectronic properties prepared using H2-assisted reactive magnetron sputtering at low temperatures for potential application in photovoltaic devices</title><author>Meng, Rutao ; Zhang, Shengli ; Guo, Hongling ; Sun, Yali ; Guo, Jiajia ; Ao, Jianping ; Liu, Wei ; Liu, Fangfang ; Zhang, Yi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-792378fa899ec9c5e93e30a36a289fb47226102dc68c83dc1e600fe8779919043</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Crystallization</topic><topic>Electrical resistivity</topic><topic>Electron mobility</topic><topic>Glass substrates</topic><topic>Hall effect</topic><topic>Low temperature</topic><topic>Magnetic properties</topic><topic>Magnetron sputtering</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Optimization</topic><topic>Optoelectronic devices</topic><topic>Photovoltaic cells</topic><topic>Pressure effects</topic><topic>Solar cells</topic><topic>Temperature effects</topic><topic>Thin films</topic><topic>Zinc oxide</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Meng, Rutao</creatorcontrib><creatorcontrib>Zhang, Shengli</creatorcontrib><creatorcontrib>Guo, Hongling</creatorcontrib><creatorcontrib>Sun, Yali</creatorcontrib><creatorcontrib>Guo, Jiajia</creatorcontrib><creatorcontrib>Ao, Jianping</creatorcontrib><creatorcontrib>Liu, Wei</creatorcontrib><creatorcontrib>Liu, Fangfang</creatorcontrib><creatorcontrib>Zhang, Yi</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Meng, Rutao</au><au>Zhang, Shengli</au><au>Guo, Hongling</au><au>Sun, Yali</au><au>Guo, Jiajia</au><au>Ao, Jianping</au><au>Liu, Wei</au><au>Liu, Fangfang</au><au>Zhang, Yi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Al-doped ZnO thin films with excellent optoelectronic properties prepared using H2-assisted reactive magnetron sputtering at low temperatures for potential application in photovoltaic devices</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2022-05-01</date><risdate>2022</risdate><volume>33</volume><issue>13</issue><spage>10267</spage><epage>10277</epage><pages>10267-10277</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Al-doped zinc oxide (AZO) thin films are deposited on glass substrate by RF magnetron sputtering under reactive plasma with different contents of hydrogen (H
2
). Following optimized volume ratio of H
2
/(H
2
+ Ar) in working gas for large area uniformity, working pressure, and substrate temperature effects are investigated systematically to achieve AZO:H film with excellent optoelectronic properties. The crystallization, sheet resistance, and Hall mobility of AZO:H film are enhanced with reducing working pressure. AZO:H films perform average transmittance of 90 ± 2% and sheet resistance of 16.5 ± 2.0 Ω/sq regardless of the substrate temperature as the sputtering process is combined with H
2
-assited sputtering deposition. As the substrate temperature is 150 °C, the prepared film is with the lowest resistivity of 6.0 × 10
− 4
Ω cm and large Hall mobility of ~ 37 cm
2
V
− 1
s
− 1
. With the optimization of AZO:H films, the efficiency of Cu
2
ZnSn(S,Se)
4
device is improved by 38% compared to the conventional preparation process. This offers incredible flexibility of substrate temperature selection for the application of AZO:H thin film as window layer in solar cells and other optoelectronic devices.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-022-08015-0</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0001-9083-0611</orcidid></addata></record> |
| fulltext | fulltext |
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| ispartof | Journal of materials science. Materials in electronics, 2022-05, Vol.33 (13), p.10267-10277 |
| issn | 0957-4522 1573-482X |
| language | eng |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Crystallization Electrical resistivity Electron mobility Glass substrates Hall effect Low temperature Magnetic properties Magnetron sputtering Materials Science Optical and Electronic Materials Optimization Optoelectronic devices Photovoltaic cells Pressure effects Solar cells Temperature effects Thin films Zinc oxide Zinc oxides |
| title | Al-doped ZnO thin films with excellent optoelectronic properties prepared using H2-assisted reactive magnetron sputtering at low temperatures for potential application in photovoltaic devices |
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