Piezoelectric aluminum nitride thin-films: A review of wet and dry etching techniques

Aluminum nitride (AlN) is a technologically relevant material that can be deposited at low temperatures in the form of thin-films while preserving most of its physical properties. Consequently, it is widely adopted in microelectromechanical systems (MEMS), especially in acoustic wave devices (RF fil...

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Veröffentlicht in:Microelectronic engineering 2022-03, Vol.257, p.111753, Article 111753
Hauptverfasser: Pinto, Rui M.R., Gund, Ved, Calaza, Carlos, Nagaraja, K.K., Vinayakumar, K.B.
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Sprache:eng
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