Enhancement of the Thermoelectric Properties and Transition of Conduction Mechanism from Nearest Neighbor to Variable Range Hopping of Ni-Doped CoSb3

The temperature-dependent electrical resistivity of the Ni-doped CoSb 3 system (Ni= 0, 1, 3, and 5 at.%) was carried out to identify the conduction mechanism at the different temperatures. The samples were prepared by solid-state reaction and characterized by x-ray diffraction (XRD) and Raman spectr...

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Veröffentlicht in:	Journal of electronic materials 2022-06, Vol.51 (6), p.3350-3358
Hauptverfasser:	Masarrat, Anha, Bhogra, Anuradha, Meena, Ramcharan, Urkude, Rajashri, Niazi, Asad, Kandasami, Asokan
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Conduction bands Conduction cooling Conduction heating Diffraction patterns Doping Electrical resistivity Electronics and Microelectronics High temperature Hopping conduction Instrumentation Low temperature Materials Science Nickel Optical and Electronic Materials Original Research Article Power factor Raman spectroscopy Seebeck effect Solid State Physics Temperature Temperature dependence Thermoelectricity X-ray diffraction
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